Search

A hybrid system with tunable coupling between phonons and qubits shows great potential for advancing quantum information processing. In this work, we demonstrate strong and tunable coupling between a surface acoustic wave resonator and a transmon qubit based on the galvanic-contact flip-chip technique. The coupling strength varies from 2 π × 7.0 to − 2 π × 20.6 MHz, which is extracted from different vacuum Rabi oscillation frequencies. The phonon-induced ac Stark shift of the qubit at different coupling strengths is also shown. Our approach offers a good experimental platform for exploring quantum acoustics and hybrid systems. [ABSTRACT FROM AUTHOR]

Hawking radiation is one of the quantum features of a black hole that can be understood as a quantum tunneling across the event horizon of the black hole, but it is quite difficult to directly observe the Hawking radiation of an astrophysical black hole. Here, we report a fermionic lattice-model-type realization of an analogue black hole by using a chain of 10 superconducting transmon qubits with interactions mediated by 9 transmon-type tunable couplers. The quantum walks of quasi-particle in the curved spacetime reflect the gravitational effect near the black hole, resulting in the behaviour of stimulated Hawking radiation, which is verified by the state tomography measurement of all 7 qubits outside the horizon. In addition, the dynamics of entanglement in the curved spacetime is directly measured. Our results would stimulate more interests to explore the related features of black holes using the programmable superconducting processor with tunable couplers. Recently, the theory of Hawking radiation of a black hole has been tested in several analogue platforms. Shi et al. report a fermionic-lattice model realization of an analogue black hole using a chain of superconducting transmon qubits with tuneable couplers and show the stimulated Hawking radiation. [ABSTRACT FROM AUTHOR]

We study superconducting properties of NbN thin film samples with different thicknesses and an ultra-thin NbTiN meander nanowire sample. For the ultra-thin samples, we found that the temperature dependence of upper critical field (Hc2) in parallel to surface orientation shows bending curvature close to critical temperature Tc, suggesting a two-dimensional (2D) nature of the samples. The 2D behavior is further supported by the angular dependence measurements of Hc2 for the thinnest samples. The temperature dependence of parallel upper critical field for the thick films could be described by a model based on the anisotropic Ginzburg–Landau theory. Interestingly, the results measured in the field perpendicular to the film surface orientation show a similar bending curvature but in a much narrow temperature region close to Tc for the ultra-thin samples. We suggest that this feature could be due to suppression of pair-breaking caused by local in-homogeneity. We further propose the temperature dependence of perpendicular Hc2 as a measure of uniformity of superconducting ultra-thin films. For the thick samples, we find that Hc2 shows maxima for both parallel and perpendicular orientations. The Hc2 peak for the perpendicular orientation is believed to be due to the columnar structure formed during the growth of the thick films. The presence of columnar structure is confirmed by transmission electron microscopy (TEM). In addition, we have measured the angular dependence of magneto-resistance, and the results are consistent with the Hc2 data. [ABSTRACT FROM AUTHOR]

Highly uniform dispersed bimetallic Pt3Zn alloy nanocrystals (NCs) with unique geometries are obtained via a facile one‐pot synthesis process by regulating different reductants. To investigate the morphology and composition of the prepared catalysts, the transmission electron microscopy, X‐ray diffraction and X‐ray photoelectron spectroscopy are utilized. Electrochemical measurements reveal that the Pt3Zn NCs significantly exhibited larger electrochemically active surface areas and excellent catalytic activity towards electro‐oxidation of methanol and ethanol in comparison to the commercial Pt/C. The optimized Pt3Zn (AA) NCs exhibit excellent mass activities in both methanol oxidation reaction (1251.4 mA mgPt−1) and ethanol oxidation reaction (975.7 mA mgPt−1) in acidic media, which are respectively 4.28 times and 3.02 times higher than those of commercial Pt/C. Moreover, the Pt3Zn NCs show a higher stability and better resistance to the COads poisoning. The activity enhancements are attributed to electronic effects and a bifunctional mechanism. [ABSTRACT FROM AUTHOR]

The design of electrode materials with rational core/shell structures is promising for improving the electrochemical properties of supercapacitors. Hence, hierarchical FeCo2S4@FeNi2S4 core/shell nanostructures on Ni foam were fabricated by a simple hydrothermal method. Owing to their structure and synergistic effect, they deliver an excellent specific capacitance of 2393 F g−1 at 1 A g−1 and long cycle lifespan as positive electrode materials. An asymmetric supercapacitor device with FeCo2S4@FeNi2S4 as positive electrode and graphene as negative electrode exhibited a specific capacitance of 133.2 F g−1 at 1 A g−1 and a high energy density of 47.37 W h kg−1 at a power density of 800 W kg−1. Moreover, the device showed remarkable cycling stability with 87.0 % specific‐capacitance retention after 5000 cycles at 2 A g−1. These results demonstrate that the hierarchical FeCo2S4@FeNi2S4 core/shell structures have great potential in the field of electrochemical energy storage. [ABSTRACT FROM AUTHOR]

Via the hydrothermal method, we synthesized MoS2 nanosheets with varying Co dopant concentrations of 0%, 3%, 7%, using cobaltous acetate as a promoter, and marked as A, B, and C, respectively. We found that the thickness and flatness of the nanosheets increased with the increase of the Co dopant concentrations. Meanwhile, the BET surface area of samples (A, B, and C) decreased with the increase of the Co dopant concentrations. Optical absorption spectroscopy showed that, compared to sample A, the A1 and B1 excitons of samples B and C were 10 and 23 meV redshifted, respectively. Then, we performed magnetization measurement to investigate the effect of Co-doping; the unique result implied that the values of the magnetic moment decreased with the increase of the Co dopant concentrations. We performed DFT computations to address the above magnetic result. The computational result indicated that the value of the magnetic moment decreased with the increase of the Co dopant concentrations, which is in agreement with the results of the experiments described above. [ABSTRACT FROM AUTHOR]

Lead halide perovskites‐based memory devices have attracted considerable interest due to their unique current–voltage (I–V) hysteresis. Herein, all‐inorganic CsPbI3 perovskite film surviving 30 d of air storage is prepared by using a poly‐vinylpyrrolidone‐assisted passivation method under fully open‐air condition. Afterwards, a memory device with a sandwich structure of Ag/CsPbI3/indium tin oxide is manufactured. From I–V characteristics of pristine device, a spontaneous reaction between the active Ag electrode and I− ions under air exposure is suggested. Furthermore, complete degradation of Ag electrode and formation of AgIx are verified, which also accompanies with generation of more iodine vacancies (VI) in perovskite film. The memory device with AgIx layer shows a bipolar resistive switching behavior, ultrahigh ON/OFF ratio (above 106), nonvolatile, reliable, and reproducible switching performance. Cell area and temperature dependent characteristics propose that the resistive switching is dominated by VI filament in low‐resistance state and thermally assisted hopping in high‐resistance state. This study provides a new insight to understand switching behavior from the way of electrode degradation and metal iodide formation in lead iodide perovskites‐based memory devices and also suggests a potential application for AgIx‐induced resistive switching in CsPbI3‐based memory device. All‐inorganic CsPbI3 perovskite film is prepared by using a poly‐vinylpyrrolidone‐assisted passivation method. Complete degradation of Ag electrode and formation of AgIx in memory device of Ag/CsPbI3/indium tin oxide are verified which also accompanies with generation of more iodine vacancies. The memory device with AgIx layer shows a bipolar resistive switching behavior, ultrahigh ON/OFF ratio, nonvolatile, reliable, and reproducible switching performance. [ABSTRACT FROM AUTHOR]