Search

Your search keyword '"William Robert Reohr"' showing total 2 results
Start Over Author "William Robert Reohr" Search Limiters Peer Reviewed
2 results on '"William Robert Reohr"'

2. A High-Speed 128-kb MRAM Core for Future Universal Memory Applications

Author

Stefan Lammers, Gerhard Müller, R. P. Robertazzi, W. Obermaier, William J. Gallagher, William Robert Reohr, Hans-Heinrich Viehmann, Daniel Braun, C. Arndt, D. Gogl, J. DeBrosse, A. Bette, Heinz Hoenigschmid, R.P. Havreluk, and D. Casarotto

Subjects
Physics, Magnetoresistive random-access memory, business.industry, Electrical engineering, Process (computing), Magnetic storage, Chip, law.invention, Tunnel junction, law, Universal memory, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, business, Access time, Pulse-width modulation
Abstract

A 128-kb magnetic random access memory (MRAM) test chip has been fabricated utilizing, for the first time, a 0.18-/spl mu/m V/sub DD/=1.8 V logic process technology with Cu metallization. The presented design uses a 1.4-/spl mu/m/sup 2/ one-transistor/one-magnetic tunnel junction (1T1MTJ) cell and features a symmetrical high-speed sensing architecture using complementary reference cells and configurable load devices. Extrapolations from test chip measurements and circuit assessments predict a 5-ns random array read access time and random write operations with

Published
2004
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results