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The neutron time-of-flight facility n_TOF at CERN, Switzerland, operational since 2001, delivers neutrons using the Proton Synchrotron (PS) 20 GeV/c proton beam impinging on a lead spallation target. The facility combines a very high instantaneous neutron flux, an excellent time of flight resolution due to the distance between the experimental area and the production target (185 meters), a low intrinsic background and a wide range of neutron energies, from thermal to GeV neutrons. These characteristics provide a unique possibility to perform neutron-induced capture and fission cross-section measurements for applications in nuclear astrophysics and in nuclear reactor technology. The most relevant measurements performed up to now and foreseen for the future will be presented in this contribution. The overall efficiency of the experimental program and the range of possible measurements achievable with the construction of a second experimental area (EAR-2), vertically located 20 m on top of the n_TOF spallation target, might offer a substantial improvement in measurement sensitivities. A feasibility study of the possible realisation of the installation extension will be also presented.

Copyright of Der Pathologe is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Copyright of Der Pathologe is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Copyright of Der Pathologe is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Copyright of Der Onkologe is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the 28Si-SOI layer and find a contact hyperfine Stark parameter of ηa = 1.9±0.7×10-3 μm²/V². We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance. [ABSTRACT FROM AUTHOR]

We demonstrate an all-electrical donor nuclear spin polarization method in silicon by exploiting the tunable interaction of donor bound electrons with a two-dimensional electron gas, and achieve over two orders of magnitude nuclear hyperpolarization at T = 5 K and B = 12 T with an in-plane magnetic field. We also show an intricate dependence of nuclear polarization effects on the orientation of the magnetic field, and both hyperpolarization and antipolarization can be controllably achieved in the quantum Hall regime. Our results demonstrate that donor nuclear spin qubits can be initialized through local gate control of electrical currents without the need for optical excitation, enabling the implementation of nuclear spin qubit initialization in dense multiqubit arrays. [ABSTRACT FROM AUTHOR]

We investigated the electronic structure as well as the magnetic properties of a Co2MnSi film on MgO(100) element-specifically at the interface to a MgO tunnel barrier by means of X-ray absorption spectroscopy and X-ray magnetic circular dichroism. The electronic structure of the Co atoms as a function of the capping layer thickness remained unchanged, whereas the XA spectra of Mn indicate an increase of the unoccupied d states. The experimental findings are consistent with the interfacial structure proposed in the work by B. Hülsen et al. [Phys. Rev. Lett. 103, 046802 (2009)], where a MnSi layer is present at the interface to the MgO with oxygen atoms at top positions in the first MgO layer. [ABSTRACT FROM AUTHOR]

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (Bpp=12μT) and long spin coherence times (T2=0.7 ms, at temperature T=8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon. [ABSTRACT FROM AUTHOR]

Nitrogen–vacancy centres in diamond are a solid-state analogue of trapped atoms, with fine structure in both the ground and excited states that may be used for advanced quantum control. These centres are promising candidates for spin-based quantum information processing and magnetometry at room temperature. Knowledge of the excited-state (ES) structure and coherence is critical to evaluating the ES as a room-temperature quantum resource, for example for a fast, optically gated swap operation with a nuclear-spin memory. Here we report experiments that probe the ES-spin coherence of single nitrogen–vacancy centres. Using a combination of pulsed-laser excitation and nanosecond-scale microwave manipulation, we observed ES Rabi oscillations, and multipulse resonant control enabled us to study coherent ES electron/nuclear-spin interactions. To understand these processes, we developed a finite-temperature theory of ES spin dynamics that also provides a pathway towards engineering longer ES spin coherence. [ABSTRACT FROM AUTHOR]

The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species, and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers. The authors describe a single atom injector, in which the imaging and alignment capabilities of a scanning force microscope (SFM) are integrated with ion beams from a series of ion sources and with sensitive detection of current transients induced by incident ions. Ion beams are collimated by a small hole in the SFM tip and current changes induced by single ion impacts in transistor channels enable reliable detection of single ion hits. They discuss resolution limiting factors in ion placement and processing and paths to single atom (and color center) array formation for systematic testing of quantum computer architectures in silicon and diamond. [ABSTRACT FROM AUTHOR]

The potential effects of the fungicide vinclozolin (VCZ) on the immune system were evaluated in F0 (dams) and F1 generations of Sprague Dawley rats exposed to a soy-free diet containing VCZ at 10, 150 and 750 ppm. In dams, exposure to VCZ at the highest concentration from gestation day 7 to postpartum day 51 (65 days total exposure) produced a significant increase in the numbers of splenocytes, B cells, T cells, helper T cells and cytotoxic T cells and a decrease in the percentage of NK cells. In F1 males, exposure to VCZ gestationally, lactationally and through feed from postnatal day 22 to 64 (78 days total exposure) produced no effect on spleen or thymus weights or splenocyte subsets. However, increases in the spleen IgM antibody-forming cell response to sheep red blood cells (150 and 750 ppm) and the activity of NK cells (150 ppm) were observed. In F1 females, exposure to VCZ produced a decrease in the activity of NK cells in all the treatment groups. Although decreases in the number of cytotoxic T cells (150 ppm) and the percentages of NK cells (10 ppm) and cytotoxic T cells (150 ppm) were also observed, the lack of a dose-related response suggested that these findings might not be biologically meaningful. In conclusion, these results demonstrate that exposure to VCZ at the concentrations tested modulates the immune responses in Sprague Dawley rats. Furthermore, the differential effect of VCZ in F1 male and female rats is consistent with the reported anti-androgenic properties of VCZ. [ABSTRACT FROM AUTHOR]