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Chlorine passivation treatment of cadmium telluride (CdTe) solar cells improves device performance by assisting electron-hole carrier separation at CdTe grain boundaries. Further improvement in device efficiency is observed after alloying the CdTe absorber layer with selenium. High-resolution secondary ion mass spectroscopy (NanoSIMS) imaging has been used to determine the distribution of selenium and chlorine at the CdTe grain boundaries in a selenium-graded CdTe device. Atomistic modeling based on density functional theory (DFT-1/2) further reveals that the presence of selenium and chlorine at an exemplar (110)/(100) CdTe grain boundary passivates critical acceptor defects and leads to n-type inversion at the grain boundary. The defect state analysis provides an explanation for the band-bending effects observed in the energy band alignment results, thereby elucidating mechanisms for high efficiencies observed in Se-alloyed and Cl-passivated CdTe solar cells.

Ab initio calculations were performed to investigate the structural and electronic properties of bulk CdTe using various exchange–correlation (XC) functionals available. Among the selected XC functionals include the local density approximation (LDA), generalized gradient approximation (GGA), meta-generalized gradient approximation (MGGA) (using the linear combination of atomic orbitals basis scheme) and Heyd–Scuseria–Ernzerhof-06 (HSE06) (using the plane-wave basis scheme). Further computational studies were performed based on the local density approximation-1/2 (LDA-1/2) and generalized gradient approximation-1/2 (GGA-1/2) self-energy correction schemes to verify their effect on the CdTe band gap in comparison to the other traditional XC functionals. The lattice parameter values obtained using different XC functionals (LDA, GGA and MGGA) were well in agreement with experimental value, with LDA predicting 6.548 A. This is 1.02% greater than the experimental value of 6.482 A. The electronic structure of CdTe was calculated for the fixed 6.482 A lattice parameter of bulk CdTe and resulted in a band gap ranging between 0.68 and 1.56 eV for LDA, GGA, MGGA, and HSE06. The band gap values predicted by the LDA-1/2 and GGA-1/2 corrections were 1.47 eV and 1.50 eV, respectively, and are found to be in good agreement with experimental values. The influence of XC functionals and semi-empirical correction schemes are expected to have important implications on the prediction and understanding of bulk CdTe thin-films found in photovoltaic applications.

The effects of the CdCl2passivation treatment on thin-film CdTe photovoltaic films and devices have been extensively studied. Recently, with an addition of CdSeTe layer at the front of the absorber layer, device conversion efficiencies in excess of 19% have been demonstrated. The effects of the CdCl2passivation treatment for devices using CdSeTe has not been studied previously. This is the first reported study of the effect of the treatment on the microstructure of the CdSeTe /CdTe absorber. The device efficiency is < 1% for the as-deposited device but this is dramatically increased by the CdCl2treatment. Using Scanning Transmission Electron Microscopy (STEM), we show that the CdCl2passivation of CdSeTe/CdTe films results in the removal of high densities of stacking faults, increase in grain size and reorientation of grains. The CdCl2treatment leads to grading of the absorber CdSeTe/CdTe films by diffusion of Se between the CdSeTe and CdTe regions. Chlorine decorates the CdSeTe and CdTe grain boundaries leading to their passivation. Direct evidence for these effects is presented using STEM and Energy Dispersive X-ray Analysis (EDX) on device cross-sections prepared using focused ion beam etching. The grading of the Se in the device is quantified using EDX line scans. The comparison of CdSeTe/CdTe device microstructure and composition before and after the CdCl2treatment provides insights into the important effects of the process and points the way to further improvements that can be made.

A major challenge in the fabrication of high band gap II–VI polycrystalline solar cells is to preserve the original composition of the absorber after the CdCl2 activation treatment. In this study, a method is demonstrated to maintain the Cd-Zn-Te alloy absorber composition during its exposure to the CdCl2 treatment. A thin film of CdS was applied as a barrier on the back surface of the high band gap polycrystalline Cd(1−x)ZnxTe (x = 20% by atomic ratio, corresponding band gap 1.72 eV) before the CdCl2 treatment. Using transmission electron microscopy and energy dispersive spectroscopy, it was observed that the composition of Cd-Zn-Te was maintained after the CdCl2 treatment. The devices fabricated after removing the thin film of CdS, exhibited diode-like behavior. A significant increase in the quantum efficiency near the short wavelength region was observed, and the band gap of Cd(1−x)ZnxTe was maintained.

Photovoltaics is an important energy technology for large scale energy generation. In the past few years cost of photovoltaic module manufacturing and installation as well as electricity generation has substantially decreased while the production volume has seen a steep increase. These changes can be attributed to improvement in solar cell efficiencies as well as better manufacturing practices. There are several photovoltaic technologies available in the market but the two primary technologies commercially manufactured for large scale installations are polycrystalline thin-film CdTe and crystalline silicon. Crystalline Si is the oldest and the most widely installed technology while thin-film CdTe is the technology that has demonstrated the largest growth and lowest LCOE (levelized cost of energy). In this study, commercial modules from both these technologies are installed side by side for an accurate comparison of their performance. The modules for comparison are installed with the same approximate nameplate capacity in three different configurations viz. Roof-top, floating on water and ground. Their performance is monitored and analyzed over a 3 month period. Thin-film CdTe demonstrated substantial advantage under all three conditions over crystalline Si in Thailand's tropical climate which is characterized by high temperatures and humidity throughout the year. Advantage demonstrated by thin-film CdTe is further supported by greater economic, environmental, reliability and life-cycle advantages that are summarized in the later part of the study.

Zinc telluride (ZnTe) films have been deposited onto uncoated glass superstrates by reactive radiofrequency (RF) sputtering with different amounts of nitrogen introduced into the process gas, and the structural and electronic transport properties of the resulting nitrogen-doped ZnTe (ZnTe:N) films characterized. Based on transmission and x-ray diffraction measurements, it was observed that the crystalline quality of the ZnTe:N films decreased with increasing nitrogen in the deposition process. The bulk carrier concentration of the ZnTe:N films determined from Hall-effect measurements showed a slight decrease at 4% nitrogen flow rate. The effect of ZnTe:N films as back contact to cadmium telluride (CdTe) solar cells was also investigated. ZnTe:N films were deposited before or after CdCl2 passivation on CdTe/CdS samples. Small-area devices were characterized for their electronic properties. Glancing-angle x-ray diffraction measurements and energy-dispersive spectroscopy analysis confirmed substantial loss of zinc from the samples where CdCl2 passivation was carried out after ZnTe:N film deposition.

CdTe thin film solar cells have demonstrated efficiencies over 20%, but CdTe has a somewhat higher band gap than optimal for single-junction terrestrial solar-cell power generation. A reduction in the band gap could therefore result in an overall improvement in performance. To reduce the band gap, selenium was alloyed with CdTe using a novel co-sublimation extension of the close-space-sublimation process. Co-sublimated layers of CdSeTe with various selenium concentrations were characterized for optical absorption and atomic concentrations, as well as to track changes in their morphology and crystallinity. The lower band-gap CdSeTe films were then incorporated into the front of CdTe cells. This two-layer band-gap structure demonstrated higher current collection and increased quantum efficiency at longer wavelengths.

Resistive oxide materials play an important role in the front contact of CdTe solar cells. The high-resistance transparent (HRT) or “buffer” layer has been used extensively in CdTe thin-film photovoltaics to enable a reduction in CdS thickness while maintaining near-maximum device voltage and fill factor. SnO2- and ZnO-based alloys were tested as HRT layers on a fluorine-doped tin oxide transparent conducting oxide. SnO2-based alloy HRT layers were deposited via atmospheric pressure chemical vapor deposition (APCVD). Alloying ZnO with MgO to create MgxZn1−xO (MZO) via radio-frequency sputter deposition was explored as a way to reduce the electron affinity of ZnO HRT layers. To fully understand the behavior of these materials, many devices were fabricated with either no CdS layer, a sublimated CdS layer, or a sputtered, oxygenated CdS layer. MZO layers resulted in high open-circuit voltage and device efficiency even with the complete elimination of the CdS layer. In both HRT systems, controlling electron affinity to optimize front contact band alignment is an important consideration. Band measurements using photoelectron spectroscopy and synchrotron techniques correlate band alignment measurements with efficiency parameters in the design of HRT and CdS layers.

Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as CdxMg1−xTe to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented along with fabrication conditions using the closed-space sublimation method.

Purpose – The purpose of this paper is to present a real world application of an innovative hybrid system reliability optimization algorithm combining Tabu search with an evolutionary algorithm (TSEA). This algorithm combines Tabu search and Genetic algorithm to provide a more efficient search method. Design/methodology/approach – The new algorithm is applied to an aircraft structure to optimize its reliability and maintain its structural integrity. For retrofitting the horizontal stabilizer under severe stall buffet conditions, a decision support system (DSS) is developed using the TSEA algorithm. This system solves a reliability optimization problem under cost and configuration constraints. The DSS contains three components: a graphical user interface, a database and several modules to provide the optimized retrofitting solutions. Findings – The authors found that the proposed algorithm performs much better than state-of-the-art methods such as Strength Pareto Evolutionary Algorithms on bench mark problems. In addition, the proposed TSEA method can be easily applied to complex real world optimization problem with superior performance. When the full combination of all input variables increases exponentially, the DSS become very efficient. Practical implications – This paper presents an application of the TSEA algorithm for solving nonlinear multi-objective reliability optimization problems embedded in a DSS. The solutions include where to install doublers and stiffeners. Compromise programming is used to rank all non-dominant solutions. Originality/value – The proposed hybrid algorithm (TSEA) assigns fitness based upon global dominance which ensures its convergence to the non-dominant front. The high efficiency of this algorithm came from using Tabu list to guidance the search to the Pareto-optimal solutions.

A major source of loss in cadmium sulfide/cadmium telluride (CdS/CdTe) solar cells results from light absorbed in the CdS window layer, which is not converted to electrical current. This film can be made more transparent by oxygen incorporation during sputter deposition at ambient temperature. Prior to this work, this material has not produced high-efficiency devices on tin oxide-coated soda-lime-glass substrates used industrially. Numerous devices were fabricated over a variety of process conditions to produce an optimized device. Although the material does not show a consistent increase in band gap with oxygenation, absorption in this layer can be virtually eliminated over the relevant spectrum, leading to an increase in short-circuit current. Meanwhile, fill factor is maintained, and open-circuit voltage increases relative to baseline devices with sublimated CdS. The trend of device parameters with oxygenation and thickness is consistent with an increasing conduction band offset at the window/CdTe interface. Optimization considering both initial efficiency and stability resulted in a National Renewable Energy Laboratory verified 15.2%-efficient cell on 3.2-mm soda-lime glass. This window material was shown to be compatible with SnO2-based transparent conducting oxide and high resistance transparent coated substrates using in-line compatible processes. Copyright © 2015 John Wiley & Sons, Ltd

Cadmium Sulphide is the conventional n-type buffer layer used in thin film Cadmium Telluride solar cells. It is well known that Cadmium Sulphide causes optical losses and sulphur diffuses into the absorber during high temperature activation. Sputter-deposited Mg-doped ZnO (MZO) has been shown to be an attractive buffer layer for Cadmium Telluride solar cells due to its transparency and tuneable band gap. It is also stable to high temperature processing and avoids diffusion of elements into the cadmium telluride absorber during the cadmium chloride activation treatment. However, degradation is observed in solar cells incorporating MZO buffer layers. Analysis of the MZO film surface potential has revealed significant fluctuations in the thin film work function once the layer is exposed to the atmosphere following deposition. These fluctuations are attributed to the high reactivity to water vapour of the MgO contained in the MZO films. This has been analysed using X-ray Photoelectron Spectroscopy to determine corresponding changes in the surface chemistry. The Zinc Oxide component is relatively stable, but the analysis shows that MgO forms a Mg(OH)2 layer on the MZO surface which forms a secondary barrier at the MZO/CdTe interface and/or at the interface between MZO and the Fluorine-doped SnO2. This affects the Fill Factor and as a consequence it degrades the conversion efficiency.

In order to study the microstructure of cadmium telluride (CdTe) photovoltaic thin film solar cells, manufactured by an in-line manufacturing process, Scanning Electron Microscopy characterization (SEM) and X-ray diffraction (XRD) characterization were performed. SEM measurement showed that no substantial changes in the grain structure of CdTe layers occurred during the Cadmium Chloride (CdCl2) treatment. No change in the cubic CdTe lattice parameter “a” was observed for the CdCl2 treated sample. It is inferred that the primary effect of the CdCl2 treatment in the devices studied is the passivation of grain boundaries and bulk defects. XRD studies show a loss of preferred orientation (as determined from the peak ratios) of planes during the copper compound treatment indicating recrystallization of the grains due to the Cu treatment. Also the Cu treated sample showed decrease in value of the lattice parameter “a”.

Steady state photocapacitance (PHCAP) was used to survey the deep levels in the energy range 0.73 eV to 1.38 eV with respect to the valence band in CdS/CdTe PV devices. The effect of the cadmium chloride treatment process on deep level densities is shown qualitatively. Estimates of the optical transition thresholds E p o for three deep minority type levels E 1, E 2, and E 3 are given and a discussion of possible assignment to specific defects is presented. Preliminary results using deep level optical spectroscopy (DLOS) to measure the optical cross sections for holes σ p o of the E 2 and E 3 levels are given. The thermal emission rates e n t for electrons at 79 K are estimated for the E 2 and E 3 levels.

The production of stable thin-film photovoltaic cells requires tight control of temperature uniformity within the glass substrates during the vacuum deposition process. Though traditional approaches such as radiation shielding and channeling more power to outer lamps result in substantial improvements in temperature uniformity they fail in meeting the stringent requirement of less than 1 °C variation across the substrate required to guarantee the long-term stability of the devices. The problem becomes especially acute while scaling up to larger commercially-viable panel sizes. To this end, a finite element thermal model of a commercial-scale deposition station has been developed and optimized with the target of achieving the desired temperature uniformity of 1 °C. The effects of improvements such as radiation shielding, addition of radiation spreader, contouring of radiation spreader and optimizing power distribution among the radiation lamps have been studied. A new lamp configuration has been proposed for attaining the desired uniformity levels.

The deposition of thin films and coatings frequently results in the generation of toxic waste, volatile organic compounds, or large amounts of waste water and sludge. Vapor deposition in vacuum offers a more environmentally benign alternative, but is not prevalent outside of the microelectronics industry due to economic reasons. However, vacuum coating could be more widely accepted, and could potentially replace nonvacuum deposition methods, if either the cycle time or costs associated with vacuum coating were reduced. In order to reduce the cycle time for vacuum deposition, a robust system for continuous air-to-vacuum-to-air (AVA) transportation of discreet substrates has been developed and constructed in this study. This technology allows the insertion of discrete components into vacuum at high rates, without the need for venting the deposition chamber. Substrates have been repeatedly transported from atmosphere to 10−5 Torr in under a second. The capability of the AVA technology was studied through the deposition and characterization of CdS and CdTe films and photovoltaic devices. With the AVA technology, the need for venting the vacuum chamber to insert the substrates and subsequent pumping of the system for deposition is eliminated. The AVA technology could be applied to the processing of silicon wafers, compact disks, optical components, solar cells, cutting tools, and fasteners.

Photovoltaic technologies have shown efficiencies of over 40%, however, manufacturing costs have prevented a more significant energy market penetration. To bridge the gap between the high efficiency technology and low cost manufacturing, a research and development tool and process was built and tested. This fully automated single vacuum photovoltaic manufacturing tool utilizes multiple inline close space sublimation (CSS) sources with automated substrate control. This maintains the proven scalability of the CSS technology and CSS source design but with the added versatility of independent substrate motion. This combination of a scalable deposition technology with increased cell fabrication flexibility has allowed for high efficiency cells to be manufactured and studied. The single vacuum system is capable of fabricating a 3.1 × 3.6 in. substrate every 45 min with a cell efficiency of 12% with a standard deviation of 0.6% as measured over 36 months. The substrate is generally scribed into 25 small area devices allowing for over 250 small area devices to be fabricated each day. The system can operate uninterrupted for maintenance for over 21 days.

An efficient apparatus to cool glass substrates in vacuum has been developed. The regions near the substrate are maintained at a higher pressure than the surrounding vacuum environment. Heat is transferred from the substrate by thermal conduction through the gas phase to a closely spaced water cooled plate. This article presents a model to predict the heat transfer rate as a function of the Knudsen number and the substrate to cooled plate distance.