Search

Your search keyword '"Vincenzo Della Marca"' showing total 3 results
Start Over Author "Vincenzo Della Marca" Search Limiters Peer Reviewed
3 results on '"Vincenzo Della Marca"'

1. Investigation of $I-V$ Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications

Author

Changhyuck Sung, Andrea Padovani, Bastien Beltrando, Donguk Lee, Myunghoon Kwak, Seokjae Lim, Luca Larcher, Vincenzo Della Marca, and Hyunsang Hwang

Subjects
I–V linearity, neuromorphic system, resistive switching memory (RRAM), TaOₓ, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

We perform experiments and device simulations to investigate the origin of current-voltage (I-V) linearity of TaOX-based resistive switching memory (RRAM) devices for their possible application as electronic synapses. By using electrical characterization and simulations, we link the electrical characteristics (linear or nonlinear I-V) to the microscopic properties of the conductive filament (CF). Our findings indicate that the shape and the thermal properties of the CF region are crucial to achieve linear I-V characteristics. These results allow optimizing the I-V curve linearity of TaOX-based RRAM devices, explaining the wide range of linear I-V characteristics experimentally observed on RRAM device obtained. When weight sum operation using SPICE simulations is performed, the read current is improved under the condition of linear I-V characteristics due to current loss minimization.

Published
2019
Full Text
View/download PDF

2. Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: Experiments and simulations

Author

Hokyung Park, Andrea Padovani, Vincenzo Della Marca, Gennadi Bersuker, Luca Larcher, and Paolo Pavan

Subjects
electron device simulation, Materials science, Silicon, Oxide, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, Trapping, Electron, Nitride, Charge-Trapping memory, 01 natural sciences, Electric charge, TANOS, chemistry.chemical_compound, Al2O3, 0103 physical sciences, Condensed Matter::Quantum Gases, 010302 applied physics, business.industry, device reliability, nitride-based trapping storage, 021001 nanoscience & nanotechnology, Flash memory, alumina, Threshold voltage, chemistry, 13. Climate action, Optoelectronics, 0210 nano-technology, business, Voltage
Abstract

We investigate the electron/hole trapping phenomena in alumina blocking oxide and their impact on the program/erase operations and retention of TaN/Al2O3/Si3N4/SiO2/Si (TANOS) memory devices. For this purpose, we perform simulations using a physical model that reproduces the charge injection/trapping in TANOS devices, which is extended in order to account for the charge trapping phenomena in the blocking layer. We derive the electrical characteristics of both electron and hole traps in Al2O3 by reproducing the measured program, erase, and retention transients. Our results show that the amount of electron charge trapped in the alumina during a program operation strongly depends on the stack composition and program voltages and can account for up to 25% of the total threshold voltage shift, whereas hole trapping during erase is negligible. Finally, we investigate the degradation of retention caused by the electron trapping in the alumina blocking layer, which is shown to result in an accelerated charge loss.

Published
2011
Full Text
View/download PDF

3. Temperature effects on metal-alumina-nitride-oxide-silicon memory operations

Author

Vincenzo Della Marca, Paolo Pavan, Gennadi Bersuker, Luca Larcher, Dawei Heh, and Andrea Padovani

Subjects
Materials science, Physics and Astronomy (miscellaneous), Silicon, Oxide, chemistry.chemical_element, 02 engineering and technology, Dielectric, Nitride, 01 natural sciences, law.invention, Charge trapping devices, Non-volatile memories, modeling and simulations, Metal, chemistry.chemical_compound, law, 0103 physical sciences, 010302 applied physics, business.industry, Transistor, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Capacitor, chemistry, visual_art, visual_art.visual_art_medium, Optoelectronics, 0210 nano-technology, business
Abstract

We present a detailed investigation of temperature effects on the operation of TaN/Al2O3/Si3N4/SiO2/Si (TANOS) memory devices. We show that not only retention but also program and erase operations are affected significantly by temperature. Using a large set of experimental data and simulations on a variety of TANOS stacks, we show that the temperature dependence of TANOS program and erase operations can be explained by accounting for that the alumina dielectric constant increases by 20%–25% over a 125 K temperature range.

Published
2010
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results