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We have investigated the growth and stability of molecular ultra-thin films, consisting of rod-like semiconducting para-hexaphenyl (6P) molecules vapor deposited on ion beam modified TiO2(110) surfaces. The ion bombarded TiO2(110) surfaces served as growth templates exhibiting nm-scale anisotropic ripple patterns with controllable parameters, like ripple depth and length. In turn, by varying the ripple depth one can tailor the average local slope angle and the local step density/terrace width of the stepped surface. Here, we distinguish three types of substrates: shallow, medium, and deep rippled surfaces. On these substrates, 6P sub-monolayer deposition was carried out in ultra-high vacuum by organic molecular beam evaporation (OMBE) at room temperature leading to the formation of islands consisting of upright standing 6P molecules, which could be imaged by scanning electron microscopy and atomic force microscopy (AFM). It has been found that the local slope and terrace width of the TiO2 template strongly influences the stability of OMBE deposited 6P islands formed on the differently rippled substrates. This effect is demonstrated by means of tapping mode AFM, where an oscillating tip was used as a probe for testing the stability of the organic structures. We conclude that by increasing the local slope of the TiO2(110) surface the bonding strength between the nearest neighbor standing molecules is weakened due to the presence of vertical displacement in the molecular layer in correspondence to the TiO2 atomic step height. [ABSTRACT FROM AUTHOR]

The dynamics of morphology changes upon post-deposition annealing of a thin film of 6 ML Au deposited on a (2 × 1) reconstructed Ge(001) surface was studied in a systematic way by scanning electron and atomic force microscopy. It has been found that annealing of the initial, continuous Au layer leads to the development of nanoislands which are crystalline and epitaxial to the Ge(001) substrate surface. The nanoislands formed at annealing temperatures lower than the bulk eutectic temperature for the Au–Ge system (634 K) are rectangular, with a flat top, while the nanoislands developed by annealing at temperatures higher than the bulk eutectic temperature have more complex, octagonal shapes. Moreover, the octagonal Au nanoislands are nearly half-buried in the Ge substrate and surrounded by a crystalline Ge rim. [ABSTRACT FROM AUTHOR]

Nano-sized gold has become an important material in various fields of science and technology, where control over the size and crystallography is desired to tailor the functionality. Gold crystallizes in the face-centered cubic (fcc) phase, and its hexagonal closed packed (hcp) structure is a very unusual and rare phase. Stable Au hcp phase has been reported to form in nanoparticles at the tips of some Ge nanowires. It has also recently been synthesized in the form of thin graphene-supported sheets which are unstable under electron beam irradiation. Here, we show that stable hcp Au 3D nanostructures with well-defined crystallographic orientation and size can be systematically created in a process of thermally induced self-assembly of thin Au layer on Ge(001) monocrystal. The Au hcp crystallite is present in each Au nanostructure and has been characterized by different electron microscopy techniques. We report that a careful heat treatment above the eutectic melting temperature and a controlled cooling is required to form the hcp phase of Au on a Ge single crystal. This new method gives scientific prospects to obtain stable Au hcp phase for future applications in a rather simple manner as well as redefine the phase diagram of Gold with Germanium. [ABSTRACT FROM AUTHOR]

We have investigated the temperature-dependent morphology and composition changes occurring during a controlled self-assembling of thin Au film on the Gallium arsenide (001) surface utilizing electron microscopy at nano and atomic levels. It has been found that the deposition of 2 ML of Au at a substrate temperature lower than 798 K leads to the formation of pure Au nanoislands. For the deposition at a substrate temperature of about 798 K the nanostructures of the stoichiometric AuGa phase were/had been grown. Gold deposition at higher substrate temperatures results in the formation of octagonal nanostructures composed of an AuGa 2 alloy. We have proved that the temperature-controlled efficiency of Au-induced etching-like of the GaAs substrate follows in a layer-by-layer manner leading to the enrichment of the substrate surface in gallium. The excess Ga together with Au forms liquid droplets which, while cooling the sample to room temperature, crystallize therein developing crystalline nanostructures of atomically-sharp interfaces with the substrate. The minimal stable cluster of 3 atoms and the activation energy for the surface diffusion E d = 0.816 ± 0.038 eV was determined. We show that by changing the temperature of the self-assembling process one can control the phase, interface and the size of the nanostructures formed. Unlabelled Image • Morphology and Phase changes of 2ML Au on GaAs(001) surface studied in broad temperature range. • High temperature metastable gold induced reconstruction of GaAs(001) found and studied by RHEED. • Liquid-Solid phase transition at nanoscale observed in situ by RHEED • Surface kinetics studied by Arrhenius plot, activation energy was extracted • Control over the nanostructure, phase, morphology and interface achieved via self-assembly [ABSTRACT FROM AUTHOR]