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A high-voltage (HV) switch is proposed which adopts the floating control circuit to reduce area by removing the passive components and reducing the number of laterally diffused metal-oxide semiconductor field effects (LDMOSFETs). The proposed HV switch consists of three LDMOSFETs and three MOSFETs without any passive components. In addition, the routing complexity of the control signals is greatly reduced by sharing all control signals in the array of switches. The proposed HV switch is fabricated using a 0.18 μm CMOS process with 50 V devices and occupies 85 x 65 μm2. The measured off-isolation is -53 dB. [ABSTRACT FROM AUTHOR]