146 results on '"Sibirev, N. V"'
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2. Kinetics of Spontaneous Formation of Core-Shell Structure in (In,Ga)As Nanowires
3. Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires
4. Study of Wurtzite Crystal Phase Stabilization in Heterostructured Ga(As,P) Nanowires
5. Crystalline-Phase Switching in Heterostructured Ga(As,P) Nanowires under the Impact of Elastic Strains
6. Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires
7. The Role of Elastic Stresses in the Formation of Nitride Nanowires with Cubic Crystalline Structure
8. The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires
9. On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires
10. Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts
11. Impact of Elastic Stress on Crystal Phase of GaP Nanowires
12. Solar Cell Based on Core/Shell Nanowires
13. Estimation of Evaporation Rate from Gold-Silicon Alloy Based on the Nucleation Time and Nanowire Length Distributions
14. Two Methods of Calculation Ternary Nanowire Composition
15. Photodynamics of Nonlinear Effects of Picosecond Laser Action on CdSe/ZnS QDs Colloidal Solutions
16. Growth Modes of GaN Plasma-Assisted MBE Nanowires
17. Regimes of radial growth for Ga-catalyzed GaAs nanowires
18. Special features of heterojunction formation in whisker nanocrystals
19. On a new method of heterojunction formation in III–V nanowires
20. The initial stage of growth of self-induced GaN nanowires
21. Study of the electrical properties of individual (Ga,Mn)As nanowires
22. The influence of liquid drop shape on crystalline structure of nanowires
23. New method of determining the young’s Modulus of (Ga,Mn)As nanowhiskers with a scanning electron microscope
24. Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals
25. Statistics of nucleation associated with the growth of whisker nanocrystals
26. Effect of diffusion from a lateral surface on the rate of GaN nanowire growth
27. Wetting regime of semiconductor nanowhisker growth: Stability and shape of catalyst droplet
28. Numerical analysis of the effect of fluctuations on the growth of nuclei during first-order phase transitions
29. Surface energy and crystal structure of nanowhiskers of III–V semiconductor compounds
30. The initial stage of growth of crystalline nanowhiskers
31. Features of nucleation in nanovolumes
32. Nonlinear effects during the growth of semiconductor nanowires
33. Effect of nucleation on the crystalline structure of nanowhiskers
34. Deposition-rate dependence of the height of GaAs-nanowires
35. Heterostructure formation in nanowhiskers via diffusion mechanism
36. Effect of growth atmosphere on the temperature profile along a nanowhisker
37. Lateral ordering of GaAs nanowhiskers on GaAs(111)As and GaAs (110) surfaces during molecular-beam epitaxy
38. Hexagonal structures in GaAs nanowhiskers
39. Nucleation at the lateral surface and the shape of whisker nanocrystals
40. Effect of deposition conditions on nanowhisker morphology
41. Assessing the minimum diameter of nanowhiskers
42. The role of surface diffusion of adatoms in the formation of nanowire crystals
43. Temperature profile along a nanowhisker growing in high vacuum
44. The theory of the formation of multilayered thin films on solid surfaces
45. The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots
46. A3B5 nanowhiskers: MBE growth and properties
47. Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb
48. The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy
49. A modified Kolmogorov model and the growth rate of a crystal face of arbitrary size
50. Kinetic model of the growth of nanodimensional whiskers by the vapor-liquid-crystal mechanism
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