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Your search keyword '"Shen Dongna"' showing total 15 results
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15 results on '"Shen Dongna"'

1. Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

Author

Iwata-Harms, Jodi M., Jan, Guenole, Serrano-Guisan, Santiago, Thomas, Luc, Liu, Huanlong, Zhu, Jian, Lee, Yuan-Jen, Le, Son, Tong, Ru-Ying, Patel, Sahil, Sundar, Vignesh, Shen, Dongna, Yang, Yi, He, Renren, Haq, Jesmin, Teng, Zhongjian, Lam, Vinh, Liu, Paul, Wang, Yu-Jen, Zhong, Tom, Fukuzawa, Hideaki, and Wang, Po-Kang

Published
2019
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10. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

Author

Son Thai Le, Jesmin Haq, Luc Thomas, Yu-Jen Wang, Ru-Ying Tong, Guenole Jan, Jian Zhu, Terry Torng, Kenlin Huang, Po-Kang Wang, Jeffrey Teng, Renren He, K. Pi, Tom Zhong, Yuan-Jen Lee, Huanlong Liu, Shen Dongna, and Vinh Lam

Subjects
Physics, Condensed matter physics, Magnetoresistance, business.industry, Electrical engineering, Spin-transfer torque, General Physics and Astronomy, Tunnel magnetoresistance, Tunnel effect, CMOS, Stack (abstract data type), Torque, business, Random access
Abstract

Magnetic random access memories based on the spin transfer torque phenomenon (STT-MRAMs) have become one of the leading candidates for next generation memory applications. Among the many attractive features of this technology are its potential for high speed and endurance, read signal margin, low power consumption, scalability, and non-volatility. In this paper, we discuss our recent results on perpendicular STT-MRAM stack designs that show STT efficiency higher than 5 kBT/μA, energy barriers higher than 100 kBT at room temperature for sub-40 nm diameter devices, and tunnel magnetoresistance higher than 150%. We use both single device data and results from 8 Mb array to demonstrate data retention sufficient for automotive applications. Moreover, we also demonstrate for the first time thermal stability up to 400 °C exceeding the requirement of Si CMOS back-end processing, thus opening the realm of non-volatile embedded memory to STT-MRAM technology.

Published
2014
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11. EH004.

Author

Kim, Dong-Joo, Shen, Dongna, Park, Jung-Hyun, Ajitsaria, Jyoti, and Choe, Song-Yul

Published
2008
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15. Piezoelectric Energy Harvesting Device in a Viscous Fluid for High Amplitude Vibration Application.

Author

Shen, Dongna, III, Howard C. Wikle, Choe, Song-Yul, and Kim, Dong-Joo

Abstract

The fragile nature of ceramic piezoelectric cantilevers limits their ability to withstand high acceleration amplitudes in vibration energy harvesting applications. This study reports a potential solution, which is vibrating the fragile power generator in a viscous fluid. The changes in resonant frequency, Q-factor, damping ratio, and power output of a bimorph piezoelectric cantilever prototype, as well as the relationship of power output vs the vibration acceleration were investigated. The broadened application frequency spectrum and the increased maximum operational acceleration demonstrate the potential of the bimorph piezoelectric cantilever operating in a viscous fluid for high amplitude vibration applications. [ABSTRACT FROM AUTHOR]

Published
2008
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