109 results on '"Serenkov I"'
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2. The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates
3. The Use of Medium-Energy Atom Beams for Solid-State PIXE Diagnostics
4. Quantum Yield of a Silicon Avalanche Photodiode in the Wavelength Range of 120–170 nm
5. Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film
6. Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions
7. Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions
8. Electro- and Magnetotransport near a LaAlO3/SrTiO3 Interphase Boundary
9. The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers
10. Elastically strained and relaxed La0.67Ca0.33MnO3 films grown on lanthanum aluminate substrates with different orientations
11. Dislocation-related photoluminescence in silicon implanted with fluorine ions
12. Influence of the substrate temperature on the initial stages of growth of barium strontium titanate films on sapphire
13. Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions
14. Structure and magneto-transport parameters of partially relaxed and coherently grown La0.67Ba0.33MnO3 films
15. Electro- and magnetotransport in La0.67Ba0.33MnO3 nanosized films coherently grown on a vicinally polished (LaAlO3)0.29 + (SrAl0.5Ta0.5O3)0.71 substrate
16. Photoluminescence in silicon implanted with silicon ions at amorphizing doses
17. Aerosol deposition of detonation nanodiamonds used as nucleation centers for the growth of nanocrystalline diamond films and isolated particles
18. Investigation of the initial stages of the growth of barium strontium titanate ferroelectric films by medium-energy ion scattering
19. A study of raman and rutherford backscattering spectra of amorphous carbon films modified with platinum
20. Stopping cross sections of 50- to 230-keV nitrogen ions in silicon measured by ion backscattering spectroscopy
21. Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique
22. Correlation between luminescent properties and structure organization in AlGaN/GaN superlattices annealed after erbium ion implantation
23. MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence
24. Molecular-beam epitaxy and properties of heterostructures with InAs nanoclusters in an Si matrix
25. Effect of substrates on the morphology of BaxSr1−x TiO3 nanometer-scale films
26. Preparation and study of carbidized porous silicon
27. Fast-ion channeling in fullerene crystals
28. Optical and electrical properties of C60Tex films
29. Photoluminescence in silicon implanted with erbium ions at an elevated temperature
30. Component composition and strain of barium-strontium titanate ferroelectric films
31. Dependence of the microwave surface resistance on the structure and thickness of superconducting cuprate films
32. Redistribution of erbium during the crystallization of buried amorphous silicon layers
33. Study of YBa2Cu3O7−x films at various stages of their growth by medium-energy ion scattering
34. Light-induced transformation of C60 films in the presence and absence of oxygen
35. Ba0.7Sr0.3TiO3 ferroelectric film prepared with the sol-gel process and its dielectric performance in planar capacitor structure
36. Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing
37. Study of intercalated fullerene films by medium-energy ion scattering
38. Growth of ultrathin YBa2Cu3O7−x films on the SrTiO3 substrate
39. Effect of annealing on the optical and structural properties of GaN:Er
40. Composition and porosity of multicomponent structures: porous silicon as a three-component system
41. Three-dimensional simulation of neutral transport in gases and weakly ionized plasmas.
42. Layered planar capacitor based on Ba[sub x]Sr[sub 1-x]TiO[sub 3] with variable parameter x.
43. Study of the growth of YBa2Cu3O7−x films on a Al2O3 single crystal with a CeO2 buffer sublayer
44. Atomic rearrangements at the TiO2-terminated (001)SrTiO3 surface and growth of thin LaMnO3 films.
45. Proton Bombardment of Hard Carbon.
46. Influence of Electron Irradiation on the Properties of Ferroelectric BaxSr1-xTiO3 Films.
47. Influence of Mg and Mn Doping on the RF-Microwave Dielectric Properties of Ba x Sr 1 - x TiO 3 Films.
48. Influence of Structural Properties on RF and Microwave Characteristics of BaSrTiO 3 Films on Various Substrates.
49. Study of the growth of YBa[sub 2]Cu[sub 3]O[sub 7-x] films on a Al[sub 2]O[sub 3] single crystal with a CeO[sub 2] buffer sublayer.
50. Optimized transport properties of LaAlO3/SrTiO3 heterointerfaces by variation of pulsed laser fluence.
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