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Demonstrates the photoluminescence (PL) in nonanodized silicon (Si). Formation of photoluminescent Si by nonanodization-based etching process; Influence of laser irradiation on PL degradation; Characterization of surface topography by atomic force microscopy; Effect of vacuum annealing of porous Si on PL intensity; Breakdown of Si-hydrogen bond on surface.

Performs a thermal treatment study of the photoluminescence (PL) intensity and Fourier-transform infrared spectroscopy of porous silicon. Reduction in the PL intensity; Coincidence of the PL reduction with hydrogen desorption; Importance of SiH[sub 2] for the visible luminescence of porous Si.

Examines the photoluminescence spectral shifts on porous silicon (Si). Mechanism involved in the chemically induced shifts; Factors attributed to PL spectral changes; Use of boron-doped Si wafers in forming porous Si layers.

We demonstrate a photodetector with a narrow spectral linewidth (approximately 2 A˚) and a useful electrical-tuning range of 35 A˚. The photodetector features a horizontal resonant cavity in which feedback is achieved using distributed feedback reflectors. The optical and electrical paths in this photodetector are orthogonal. Consequently, this normal incidence horizontal resonant cavity photodetector is completely integrable into wavelength division demultiplexing and other optoelectronic integrated circuits with a potential for high speed operation. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]