41 results on '"Rowell, Nelson"'
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2. CdS magic-size clusters exhibiting one sharp ultraviolet absorption singlet peaking at 361 nm
3. Room-temperature formation of CdS magic-size clusters in aqueous solutions assisted by primary amines
4. Formation of colloidal alloy semiconductor CdTeSe magic-size clusters at room temperature
5. Direct and Indirect Evolution of Photoluminescent Semiconductor CdS Magic‐Size Clusters through Their Precursor Compounds.
6. A Two‐Pathway Model for the Evolution of Colloidal Compound Semiconductor Quantum Dots and Magic‐Size Clusters.
7. Transformations of Magic-Size Clusters via Precursor Compound Cation Exchange at Room Temperature.
8. Manipulating Reaction Intermediates to Aqueous‐Phase ZnSe Magic‐Size Clusters and Quantum Dots at Room Temperature.
9. A Real‐Time In Situ Demonstration of Direct and Indirect Transformation Pathways in CdTe Magic‐Size Clusters at Room Temperature.
10. Fourier-transform infrared and photoluminescence spectroscopies of self-assembled monolayers of long-chain thiols on (001) GaAs
11. Accuracy of an atomic microwave power standard
12. Transformation Pathways in Colloidal CdTeSe Magic‐Size Clusters.
13. Fourier-transform radiation thermometry: measurements and uncertainties
14. Transformation Pathway from CdSe Magic‐Size Clusters with Absorption Doublets at 373/393 nm to Clusters at 434/460 nm.
15. Germanium Nanocrystal Properties from Photoluminescence.
16. Surface-Enhanced Infrared Absorption and Raman Scattering of Adsorbate Molecules on Self-assembled Au Nanorods
17. Protein Adsorption on the Surface Functionalized Planar Si
18. Colloidal Silver Nanoparticle Induced Photoluminescence Quench on the Surface Functionalized Planar Si
19. Reversible Transformations at Room Temperature among Three Types of CdTe Magic-Size Clusters.
20. Transformations Among Colloidal Semiconductor Magic-Size Clusters.
21. Chapter 4: Light Emission from Germanium Nanostructures.
22. Ophthalmic Drops with Nanoparticles Derived from a Natural Product for Treating Age-Related Macular Degeneration.
23. Room‐Temperature Formation Pathway for CdTeSe Alloy Magic‐Size Clusters.
24. Fragmentation of Magic‐Size Cluster Precursor Compounds into Ultrasmall CdS Quantum Dots with Enhanced Particle Yield at Low Temperatures.
25. Transformation of ZnS Precursor Compounds to Magic-Size Clusters Exhibiting Optical Absorption Peaking at 269 nm.
26. Identifying Clusters and/or Small-Size Quantum Dots in Colloidal CdSe Ensembles with Optical Spectroscopy.
27. Four Types of CdTe Magic-Size Clusters from One Prenucleation Stage Sample at Room Temperature.
28. Photoluminescence spectra of trivalent praseodymium implanted in semi-insulating GaAs.
29. Double modulation Fourier transform infrared photoluminescence of InSb
30. Thermally-induced reversible structural isomerization in colloidal semiconductor CdS magic-size clusters.
31. Colloidal CdSe 0-Dimension Nanocrystals and Their Self-Assembled 2-Dimension Structures.
32. Two-Step Nucleation of CdS Magic-Size Nanocluster MSC-311.
33. Inside Back Cover: Transformation Pathway from CdSe Magic‐Size Clusters with Absorption Doublets at 373/393 nm to Clusters at 434/460 nm (Angew. Chem. Int. Ed. 37/2021).
34. Innenrücktitelbild: Transformation Pathway from CdSe Magic‐Size Clusters with Absorption Doublets at 373/393 nm to Clusters at 434/460 nm (Angew. Chem. 37/2021).
35. Inside Cover: Room‐Temperature Formation Pathway for CdTeSe Alloy Magic‐Size Clusters (Angew. Chem. Int. Ed. 39/2020).
36. Innentitelbild: Room‐Temperature Formation Pathway for CdTeSe Alloy Magic‐Size Clusters (Angew. Chem. 39/2020).
37. Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment.
38. Precursor Self‐Assembly Identified as a General Pathway for Colloidal Semiconductor Magic‐Size Clusters.
39. Probing intermediates of the induction period prior to nucleation and growth of semiconductor quantum dots.
40. Characterization of SiGe multiple quantum wells by spectroscopic ellipsometry and photoluminescence
41. Photoluminescence spectra of trivalent praseodymium implanted in semi-insulating GaAs
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