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Kristin Kostka,1,2 Talita Duarte-Salles,3 Albert Prats-Uribe,4 Anthony G Sena,5,6 Andrea Pistillo,3 Sara Khalid,4 Lana YH Lai,7 Asieh Golozar,8,9 Thamir M Alshammari,10 Dalia M Dawoud,11 Fredrik Nyberg,12 Adam B Wilcox,13,14 Alan Andryc,5 Andrew Williams,15 Anna Ostropolets,16 Carlos Areia,17 Chi Young Jung,18 Christopher A Harle,19 Christian G Reich,1,2 Clair Blacketer,5,6 Daniel R Morales,20 David A Dorr,21 Edward Burn,3,4 Elena Roel,3,22 Eng Hooi Tan,4 Evan Minty,23 Frank DeFalco,5 Gabriel de Maeztu,24 Gigi Lipori,19 Hiba Alghoul,25 Hong Zhu,26 Jason A Thomas,13 Jiang Bian,19 Jimyung Park,27 Jordi Martínez Roldán,28 Jose D Posada,29 Juan M Banda,30 Juan P Horcajada,31 Julianna Kohler,32 Karishma Shah,33 Karthik Natarajan,16,34 Kristine E Lynch,35,36 Li Liu,37 Lisa M Schilling,38 Martina Recalde,3,22 Matthew Spotnitz,14 Mengchun Gong,39 Michael E Matheny,40,41 Neus Valveny,42 Nicole G Weiskopf,21 Nigam Shah,29 Osaid Alser,43 Paula Casajust,42 Rae Woong Park,27,44 Robert Schuff,21 Sarah Seager,1 Scott L DuVall,35,36 Seng Chan You,45 Seokyoung Song,46 Sergio Fernández-Bertolín,3 Stephen Fortin,5 Tanja Magoc,19 Thomas Falconer,16 Vignesh Subbian,47 Vojtech Huser,48 Waheed-Ul-Rahman Ahmed,33,49 William Carter,38 Yin Guan,50 Yankuic Galvan,19 Xing He,19 Peter R Rijnbeek,6 George Hripcsak,16,34 Patrick B Ryan,5,16 Marc A Suchard,51 Daniel Prieto-Alhambra4 1IQVIA, Cambridge, MA, USA; 2OHDSI Center at The Roux Institute, Northeastern University, Portland, ME, USA; 3Fundació Institut Universitari per a la recerca a l’Atenció Primària de Salut Jordi Gol i Gurina (IDIAPJGol), Barcelona, Spain; 4Centre for Statistics in Medicine, NDORMS, University of Oxford, Oxford, UK; 5Janssen Research & Development, Titusville, NJ, USA; 6Department of Medical Informatics, Erasmus University Medical Center, Rotterdam, The Netherlands; 7School of Medical Sciences, University of Manchester, Manchester, UK; 8Regeneron Pharmaceuticals, Tarrytown, NY, USA; 9Department of Epidemiology, Johns Hopkins Bloomberg School of Public Health, Baltimore, MD, USA; 10College of Pharmacy, Riyadh Elm University, Riyadh, Saudi Arabia; 11National Institute for Health and Care Excellence, London, UK; 12School of Public Health and Community Medicine, Institute of Medicine, Sahlgrenska Academy, University of Gothenburg, Gothenburg, Sweden; 13Department of Biomedical Informatics and Medical Education, University of Washington, Seattle, WA, USA; 14Unviersity of Washington Medicine, Seattle, WA, USA; 15Tufts Institute for Clinical Research and Health Policy Studies, Boston, MA, USA; 16Department of Biomedical Informatics, Columbia University Irving Medical Center, New York, NY, USA; 17Nuffield Department of Clinical Neurosciences, University of Oxford, Oxford, UK; 18Division of Respiratory and Critical Care Medicine, Department of Internal Medicine, Daegu Catholic University Medical Center, Daegu, South Korea; 19University of Florida Health, Gainesville, FL, USA; 20Division of Population Health and Genomics, University of Dundee, Dundee, UK; 21Department of Medical Informatics & Clinical Epidemiology, Oregon Health & Science University, Portland, OR, USA; 22Universitat Autònoma de Barcelona, Barcelona, Spain; 23O’Brien Institute for Public Health, Faculty of Medicine, University of Calgary, Calgary, Canada; 24IOMED, Barcelona, Spain; 25Faculty of Medicine, Islamic University of Gaza, Gaza, Palestine; 26Nanfang Hospital, Southern Medical University, Guangzhou, People’s Republic of China; 27Department of Biomedical Sciences, Ajou University Graduate School of Medicine, Suwon, South Korea; 28Director of Innovation and Digital Transformation, Hospital del Mar, Barcelona, Spain; 29Department of Medicine, School of Medicine, Stanford University, Redwood City, CA, USA; 30Georgia State University, Department of Computer Science, Atlanta, GA, USA; 31Department of Infectious Diseases, Hospital del Mar, Institut Hospital del Mar d’Investigació Mèdica (IMIM), Universitat Autònoma de Barcelona, Universitat Pompeu Fabra, Barcelona, Spain; 32United States Agency for International Development, Washington, DC, USA; 33Botnar Research Centre, NDORMS, University of Oxford, Oxford, UK; 34New York-Presbyterian Hospital, New York, NY, USA; 35VA Informatics and Computing Infrastructure, VA Salt Lake City Health Care System, Salt Lake City, UT, USA; 36Department of Internal Medicine, University of Utah School of Medicine, Salt Lake City, UT, USA; 37Biomedical Big Data Center, Nanfang Hospital, Southern Medical University, Guangzhou, People’s Republic of China; 38Data Science to Patient Value Program, School of Medicine, University of Colorado Anschutz Medical Campus, Aurora, CO, USA; 39Institute of Health Management, Southern Medical University, Guangzhou, People’s Republic of China; 40Tennessee Valley Healthcare System, Veterans Affairs Medical Center, Nashville, TN, USA; 41Department of Biomedical Informatics, Vanderbilt University Medical Center, Nashville, TN, USA; 42Real-World Evidence, TFS, Barcelona, Spain; 43Massachusetts General Hospital, Harvard Medical School, Boston, MA, USA; 44Department of Biomedical Informatics, Ajou University School of Medicine, Suwon, South Korea; 45Department of Preventive Medicine, Yonsei University College of Medicine, Seoul, South Korea; 46Department of Anesthesiology and Pain Medicine, Catholic University of Daegu, School of Medicine, Daegu, South Korea; 47College of Engineering, The University of Arizona, Tucson, AZ, USA; 48National Library of Medicine, National Institutes of Health, Bethesda, MD, USA; 49College of Medicine and Health, University of Exeter, St Luke’s Campus, Exeter, UK; 50DHC Technologies Co. Ltd., Beijing, People’s Republic of China; 51Departments of Biostatistics, Computational Medicine, and Human Genetics, University of California, Los Angeles, CA, USACorrespondence: Daniel Prieto-Alhambra, Botnar Research Centre, Windmill Road, Oxford, OX37LD, UK, Email daniel.prietoalhambra@ndorms.ox.ac.ukPurpose: Routinely collected real world data (RWD) have great utility in aiding the novel coronavirus disease (COVID-19) pandemic response. Here we present the international Observational Health Data Sciences and Informatics (OHDSI) Characterizing Health Associated Risks and Your Baseline Disease In SARS-COV-2 (CHARYBDIS) framework for standardisation and analysis of COVID-19 RWD.Patients and Methods: We conducted a descriptive retrospective database study using a federated network of data partners in the United States, Europe (the Netherlands, Spain, the UK, Germany, France and Italy) and Asia (South Korea and China). The study protocol and analytical package were released on 11th June 2020 and are iteratively updated via GitHub. We identified three non-mutually exclusive cohorts of 4,537,153 individuals with a clinical COVID-19 diagnosis or positive test, 886,193 hospitalized with COVID-19, and 113,627 hospitalized with COVID-19 requiring intensive services.Results: We aggregated over 22,000 unique characteristics describing patients with COVID-19. All comorbidities, symptoms, medications, and outcomes are described by cohort in aggregate counts and are readily available online. Globally, we observed similarities in the USA and Europe: more women diagnosed than men but more men hospitalized than women, most diagnosed cases between 25 and 60 years of age versus most hospitalized cases between 60 and 80 years of age. South Korea differed with more women than men hospitalized. Common comorbidities included type 2 diabetes, hypertension, chronic kidney disease and heart disease. Common presenting symptoms were dyspnea, cough and fever. Symptom data availability was more common in hospitalized cohorts than diagnosed.Conclusion: We constructed a global, multi-centre view to describe trends in COVID-19 progression, management and evolution over time. By characterising baseline variability in patients and geography, our work provides critical context that may otherwise be misconstrued as data quality issues. This is important as we perform studies on adverse events of special interest in COVID-19 vaccine surveillance.Keywords: OHDSI, OMOP CDM, descriptive epidemiology, real world data, real world evidence, open science

TiN/Ti/HfO2/Pt resistive switching devices have been fabricated, measured, and modeled. After programming the devices in the low resistance state, the current–voltage characteristic below the reset switching voltage was measured at different temperatures (from 90 to 350 K). A weak but complex temperature dependence was obtained for several voltage regimes. These memristors belong to a wider set known as valence change memories, whose conductance is determined by the formation of conductive filaments (CFs) linked to a high density of oxygen vacancies in a dielectric sandwiched between two metal electrodes. This usually leads to ohmic conduction in the low resistance state. However, a non-linear current dependence has been also observed in the measured devices, in addition to symmetric current–voltage curves for positive and negative biases in the 0–0.6 V voltage range. Three different thermal dependences have been considered for explaining the whole set of experimental data. Two of them are linked to ohmic filamentary conduction; the CF shows a conductivity enhancement due to thermally activated mechanisms at low temperatures; on the contrary, a CF conductivity degradation is observed at the higher temperatures. Finally, an additional slightly higher value for the non-linear current component as the temperature rises has also been taken into account. A semiempirical compact model has been implemented including these conduction mechanisms and their corresponding temperature dependences, the device has been simulated in LT-Spice and the experimental currents have been correctly reproduced. [ABSTRACT FROM AUTHOR]

The relevance of the intrinsic series resistance effect in the context of resistive random access memory (RRAM) compact modeling is investigated. This resistance notably affects the conduction characteristic of resistive switching memories so that it becomes an essential factor to consider when fitting experimental data, especially those coming from devices exhibiting the so-called snapback and snapforward effects. A thorough description of the resistance value extraction procedure and an analysis of the connection of this value with the set and reset transition voltages in HfO2-based valence change memories are presented. Furthermore, in order to illustrate the importance of this feature in the shape of the I–V curve, the Stanford model for RRAM devices is enhanced by incorporating the series resistance as an additional parameter in the Verilog-A model script. [ABSTRACT FROM AUTHOR]

Memristive devices have shown a great potential for non-volatile memory circuits and neuromorphic computing. For both applications it is essential to know the physical mechanisms behind resistive switching; in particular, the time response to external voltage signals. To shed light in these issues we have studied the role played by the applied voltage ramp rate in the electrical properties of TiN/Ti/HfO2/W metal–insulator–metal resistive switching devices. Using an ad hoc experimental set-up, the current–voltage characteristics were measured for ramp rates ranging from 100 mV s−1–1 MV s−1. These measurements were used to investigate in detail the set and reset transitions. It is shown that the highest ramp rates allow controlling the resistance values corresponding to the intermediate states at the very beginning of the reset process, which is not possible by means of standard quasistatic techniques. Both the set and reset voltages increase with the ramp rate because the oxygen vacancies movement is frequency dependent so that, when the ramp rate is high enough, the conductive filaments neither fully form nor dissolve. In agreement with Chua's theory of memristive devices, this effect causes the device resistance window to decrease as the ramp rate increases, and even to vanish for very high ramp rates. Remarkably, we demonstrate that the voltage ramp rate can be straightforwardly used to control the conductance change of the switching devices, which opens up a new way to program the synaptic weights when using these devices to mimic synapses for neuromorphic engineering applications. Moreover, the data obtained have been compared with the predictions of the dynamic memdiode model. [ABSTRACT FROM AUTHOR]

Time series statistical analyses (TSSA) have been employed to evaluate the variability of resistive switching memories and to model the set and reset voltages for modeling purposes. The conventional procedures behind time series theory have been used to obtain autocorrelation and partial autocorrelation functions and determine the simplest analytical models to forecast the set and reset voltages in a long series of resistive switching processes. To do so, and for the sake of generality in our study, a wide range of devices have been fabricated and measured. Different oxides and electrodes have been employed, including bilayer dielectrics in devices such as Ni/HfO2/Si-n+, Cu/HfO2/Si-n+, and Au/Ti/TiO2/SiOx/Si-n+. The TSSA models obtained allowed one to forecast the reset and set voltages in a series if previous values were known. The study of autocorrelation data between different cycles in the series allows estimating the inertia between cycles in long resistive switching series. Overall, TSSA seems to be a very promising method to evaluate the intrinsic variability of resistive switching memories. [ABSTRACT FROM AUTHOR]

Memristive devices made of multilayer hexagonal boron nitride are attracting much attention for information storage, computation, encryption, and communication. Generating multilevel operation in these memristors would be an important added value for the field of neuromorphic computation, but the main phenomenon producing it (i.e., conductance quantization) is not well understood for this material. Here, we analyze hexagonal boron nitride memristive devices with metal electrodes operating in their quasistatic and transient regimes. Conductance quantization effects were observed both in I-V curves measured under ramped voltage stress and in the reset processes driven by voltage pulse trains. Polar and time lag plots are employed to shed light on the physics behind the device resistive switching. A model is proposed to reproduce the electrical characteristics of progressive reset processes and the discretization of the device conductance linked to quantum effects. [ABSTRACT FROM AUTHOR]

A simulation tool based on a 3D kinetic Monte Carlo algorithm has been employed to analyse bipolar conductive bridge RAMs fabricated with Cu/HfOx/Pt stacks. Resistive switching mechanisms are described accounting for the electric field and temperature distributions within the dielectric. The formation and destruction of conductive filaments (CFs) are analysed taking into consideration redox reactions and the joint action of metal ion thermal diffusion and electric field induced drift. Filamentary conduction is considered when different percolation paths are formed in addition to other conventional transport mechanisms in dielectrics. The simulator was tuned by using the experimental data for Cu/HfOx/Pt bipolar devices that were fabricated. Our simulation tool allows for the study of different experimental results, in particular, the current variations due to the electric field changes between the filament tip and the electrode in the High Resistance State. In addition, the density of metallic atoms within the CF can also be characterized along with the corresponding CF resistance description. [ABSTRACT FROM AUTHOR]

A multivariate analysis of the parameters that characterize the reset process in Resistive Random Access Memory (RRAM) has been performed. The different correlations obtained can help to shed light on the current components that contribute in the Low Resistance State (LRS) of the technology considered. In addition, a screening method for the Quantum Point Contact (QPC) current component is presented. For this purpose, the second derivative of the current has been obtained using a novel numerical method which allows determining the QPC model parameters. Once the procedure is completed, a whole Resistive Switching (RS) series of thousands of curves is studied by means of a genetic algorithm. The extracted QPC parameter distributions are characterized in depth to get information about the filamentary pathways associated with LRS in the low voltage conduction regime. [ABSTRACT FROM AUTHOR]