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Microcavity polaritons are strongly interacting hybrid light–matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature. Stimulated polariton relaxation into multiple ring resonator modes is observed, which exhibit threshold-like dependence of the emission intensity with pulse energy. The strong exciton-photon coupling regime is confirmed by the significant reduction of the free spectral range with energy and the blueshift of the exciton–like modes with increasing pulse energy. Importantly, the exciton emission shows no broadening with power, further confirming that lasing is observed at electron–hole densities well below the Mott transition. Overall, our work paves the way toward the development of novel UV devices based on the high-speed slab waveguide polariton geometry operating up to room temperature with the potential to be integrated into complex photonic circuits.

Single-photon emission from a single GaN/AlN quantum dot induced by continuous-wave laser excitation, leading to an optimum g (2)(0) = 0.17 at room temperature.

In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (9 cm−2) is much lower than that of TD (2–3 × 1010 cm−2). Time-resolved photoluminescence and cathodoluminescence studies confirm the prevalence of point defects over TDs in QW efficiency. Interestingly, TD terminations lead to the formation of independent domains for carriers, thanks to V-pits and step bunching phenomena.

Here the authors present temperature dependent studies of GaN nanobeam lasers grown on a silicon substrate and demonstrate high-βlasing at room temperature. Comprehensive optical and quantum-optical characterization, complemented by microscopic modeling, of the nanolasers allow identification of lasing behavior.

We report on a practical method for developing InGaN-based edge emitting laser diodes of cavity length down to 45 μm. Samples consisting of one uncoated cleaved facet and one etched facet coated with a high-reflectivity (HR) dielectric distributed Bragg reflector (DBR) exhibit lasing in the continuous wave (cw) regime for cavity lengths down to 250 μm and lasing under pulsed injection for lengths as short as 100 μm. For samples having a second HR dielectric DBR, we could demonstrate cw lasing for a cavity length as short as 45 μm with a threshold current below 10 mA being reported for a 75 μm long device. Through a systematic study of the threshold current (Ith) and the slope efficiency (ηs) as a function of cavity length, it is proposed that the parameters underpinning the evolution of Ith and ηs with decreasing cavity length and their overall degradation in the short cavity regime are free carrier absorption, Auger processes and the decrease in the recombination losses due to nonuniform carrier distribution across the multiple quantum well active region. [ABSTRACT FROM AUTHOR]

We demonstrate optically-pumped waveguides grown on freestanding GaN substrate featuring AlInN claddings and GaN/Al0.1Ga0.9N multiple quantum wells exhibiting narrow bandwidth (3.8 nm) optical gain around 370 nm. Due to the high refractive index contrast between the cladding layers and the active region, the confinement factor is as high as 48% and net modal gain values in excess of 80 cm−1 are measured. The results agree well with self-consistent calculations accounting for built-in electric field effects and high carrier density related phenomena. These results open interesting perspectives for the realization of more efficient near-UV lasers and optical amplifiers. [ABSTRACT FROM AUTHOR]

Scanning near-field optical microscopy was used to study the influence of the surface morphology on the properties of light emission and alloy composition in InGaN epitaxial layers grown on GaN substrates. A strong correlation between the maps of the photoluminescence (PL) peak energy and the gradient of the surface morphology was observed. This correlation demonstrates that the In incorporation strongly depends on the geometry of the monolayer step edges that form during growth in the step-flow mode. The spatial distribution of nonradiative recombination centers — evaluated from PL intensity maps — was found to strongly anticorrelate with the local content of In atoms in the InGaN alloy. [ABSTRACT FROM AUTHOR]

We present a theoretical description of the small-signal transient response of polariton laser diodes (pol-LDs) based on simplified coupled rate equations describing the exciton reservoir and the ground-state polariton populations. The analytic expressions derived for two pumping geometries, which are valid for all inorganic semiconductors suitable for the realization of pol-LDs, are compared to exact numerical calculations performed for the specific case of GaN-based devices. The two approaches show excellent agreement provided the current step transient remains within the small-signal limit. We report that the temporal attenuation of the envelopes of the oscillations matches half the value of the damping factor () of the pol-LDs, which is proportional to the square of the oscillation relaxation resonance frequency. An explicit expression for the dependence of on both the exciton-photon detuning and the driving current (equivalently the optical pump power) is also obtained. In a further step, we derive the expression for the turn-on delay (td) associated with the build-up of the exciton reservoir population up to its threshold value before coherent light emission occurs. We show that td has the same functional form for the two pumping geometries. It is equal to the effective exciton lifetime () weighted by a logarithmic dependence on the initial and final driving currents. In addition, is shown to be approximately equal to the exciton lifetime, which proves to be the main parameter governing the build-up of polariton lasing/condensation. Beyond electrically driven polariton lasers, we highlight that the temporal shape of the transients could also be easily tested by monitoring the time dependence of the output power of optically pumped polariton lasers subjected to a sudden increase in the continuous wave pump power within the small-signal limit. [ABSTRACT FROM AUTHOR]