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Frequency‐dependent nonlinear process in microresonators is widely acknowledged, but there is no theory available to calculate the conversion efficiency for each resonance of the ring, except for the phase‐matching one. Similarly for azimuth‐dependent nonlinear process in birefringent rings, there is a lack of theory to analysis the conversion efficiency for each azimuth of the ring. Consequently, it leads to old‐fashioned or ill‐considered coupling position and inefficient energy conversion in birefringent microrings. Here, the study introduces spatio‐temporal coupled‐mode equation to describe mode spatial properties in the cavity, compensating for the deficiency of temporal coupled‐mode equation in describing sophisticated responses. By this equation, it is found that over a wide frequency range, the extremely strong second‐harmonic generation of TE modes can be achieved at different azimuth under different pumps in an X‐cut lithium niobate microring, as proved by a 440 000%/W conversion efficiency in a non‐poling ring recently. This theory is important for realizing an efficient entangled quantum light source, for example. Meanwhile, it will provide new ideas and guidelines for design and applications of monolithic birefringent photonic integrated circuits with high energy efficiency. [ABSTRACT FROM AUTHOR]

Compared with well-developed free space polarization converters, polarization conversion between TE and TM modes in the waveguide is generally considered to be caused by shape birefringence, like curvature, morphology of waveguide cross section and scattering. Here, we study the polarization conversion mechanism in 1-THz-FSR X-cut lithium niobate microrings with multiple-resonance condition, that is the conversion can be implemented by birefringence of waveguides, which will also introduce an avoided-mode crossing. In the experiment, we find that this mode crossing results in severe suppression of one sideband in local nondegenerate four-wave mixing and disrupts the cascaded four-wave mixing on this side. Simultaneously, we propose one two-dimensional method to simulate the eigenmodes (TE and TM) in X-cut microrings, and the mode crossing point. This work will provide one approach to the design of polarization converters and simulation for monolithic photonics integrated circuits, and may be helpful to the studies of missed temporal dissipative soliton formation in X-cut lithium niobate rings. [ABSTRACT FROM AUTHOR]

Violet phosphorus (VP), a novel two-dimensional (2D) nanomaterial, boasts structural anisotropy, a tunable optical bandgap, and superior thermal stability compared with its allotropes. Its multifunctionality has sparked widespread interest in the community. Yet, the VP's air susceptibility impedes both probing its intrinsic features and device integration, thus making it of urgent significance to unveil the degradation mechanism. Herein, we conduct a comprehensive study of photoactivated degradation effects on VP. A nitrogen annealing method is presented for the effective elimination of surface adsorbates from VP, as evidenced by a giant surface-roughness improvement from 65.639 nm to 7.09 nm, enabling direct observation of the intrinsic morphology changes induced by photodegradation. Laser illumination demonstrates a significant thickness-thinning effect on VP, manifested in the remarkable morphological changes and the 73% quenching of PL intensity within 160 s, implying its great potential for the efficient selected-area etching of VP at high resolution. Furthermore, van der Waals passivation of VP using 2D hexagonal boron nitride (hBN) was achieved. The hBN-passivated channel exhibited improved surface roughness (0.512 nm), reduced photocurrent hysteresis, and lower responsivity (0.11 A/W @ 450 nm; 2 μW), effectively excluding adsorbate-induced electrical and optoelectrical effects while disabling photodegradation. Based on our experimental results, we conclude that three possible factors contribute to the photodegradation of VP: illumination with photon energy higher than the bandgap, adsorbed H2O, and adsorbed O2. [ABSTRACT FROM AUTHOR]

Studies into scatterings of photonic structures have been so far overwhelmingly focused on their dependencies on the spatial and spectral morphologies of the incident waves. In contrast, evolutions of scattering properties through another parameter space of incident directions (momentum space) has not attracted sufficient attention, with the underlying general governing rules still unrevealed. Here, from the perspective of quasi‐normal modes (QNMs), the momentum‐space scattering extremizations with respect to varying incident directions of plane waves are investigated. It is revealed that for effective single‐QNM excitations, scatterings are maximized exactly along those directions where the QNM radiation reaches its maximum, with matched incident and radiation polarizations. For an arbitrary direction, when the incident polarization is tuned to be orthogonal to that of the mode radiation, the QNM cannot be excited and thus the scatterer becomes invisible with null scatterings. The principles revealed are protected by fundamental laws of reciprocity and energy conservation (optical theorem), which can be further expanded and applied for other branches of wave physics. [ABSTRACT FROM AUTHOR]

Explorations of indefinite nanocavities have attracted surging interest in the past few years as such cavities enable light confinement to exceptionally small dimensions, relying on the hyperbolic dispersion of their consisting medium. Here, we propose and study indefinite graphene nanocavities, which support ultra-compressed mode volumes with confinement factors up to 10 9 . Moreover, the nanocavities we propose manifest anomalous scaling laws of resonances and can be effectively excited from the far field. The indefinite graphene cavities, based on low dimensional materials, present a novel rout to squeeze light down to the nanoscale, rendering a more versatile platform for investigations into ultra-strong light–matter interactions at mid-infrared to terahertz spectral ranges. [ABSTRACT FROM AUTHOR]

A very attractive advantage of graphene is that its Fermi level can be regulated by electrostatic bias doping. It is of great significance to investigate and control the spatial location of graphene emission for graphene thermal emitters, in addition to tuning the emission intensity and emission spectrum. Here, we present a detailed theoretical model to describe the graphene emission characteristics versus gate voltages. The experimentally observed movement of the emission spot and temperature distribution of graphene emitters are basically in agreement with those from the theoretical model. Our results provide a simple method to predict the behavior of graphene emitters that is beneficial for achieving the spatial dynamic regulation of graphene infrared emission arrays. [ABSTRACT FROM AUTHOR]

Van der Waals heterojunctions, formed by stacking two-dimensional materials with various structural and electronic properties, opens a new way to design new functional devices for future applications and provides an ideal research platform for exploring novel physical phenomena. In this work, bilayer graphene/WS2/metal heterojunctions (GWMHs) with vertical architecture were designed and fabricated. The tunneling current–bias voltage (It − Vb) properties of GWMHs can be tuned by 5 × 106 times in magnitude for current increasing from 0.2 nA to 1 mA with applied bias voltage increasing from 10 mV to 2 V. Moreover, the transfer properties of GWMHs exhibit n-type conduction at Vb = 0.1 V and bipolar conduction at Vb = 2 V; these findings are explained well by direct tunneling (DT) and Fowler–Nordheim tunneling (FNT), respectively. The results show the great potential of GWMHs for high-power field-effect transistors (FETs) and next-generation logic electronic devices. [ABSTRACT FROM AUTHOR]

As the important electric loss of a graphene resonator, intrinsic current loss has received increasing attention, but the existing research is limited to qualitative analysis and approximate calculation. Based on the microscopic behavior of carriers, we have accurately established the calculation model of induced current loss, which is in good agreement with the existing experimental results. Compared with the previous models, the model in this work can not only fit the inverse V-shaped Q − Vdc curve well but also be compatible with the V-shaped Q − Vdc curve, which is beyond the reach of the previous models. In addition, the calculation results show that selecting the appropriate gate voltage combination when stimulating the graphene resonator can increase the quality factor by nearly 1–2 orders of magnitude. Furthermore, we reasonably explain the importance of DC gate voltage applied in the experiment compared with the case of non-DC gate voltage. This work realizes the accurate calculation of intrinsic current loss and is of great significance for reducing the intrinsic current loss in the practical application of graphene resonators. [ABSTRACT FROM AUTHOR]

Improving thermal transport between substrate and transistors has become a vital solution to the thermal challenge in nanoelectronics. Recently 2D WTe2 has sparked extensive interest because of heavy atomic mass and low Debye temperature. Here, the thermal transport of supported WTe2 was studied via Raman thermometry with electrical heating. The supported 30 nm WTe2 encased with 70 nm Al2O3 delivered 4.8 W·m−1·K−1 in-plane thermal conductivity along zigzag direction at room temperature, which was almost 1.6 times larger than that along armchair direction (3.0 W·m−1·K−1). Interestingly, the superior and inferior directions for thermal transport are just opposite of those for electrical transport. Hence, a heat manipulation model in WTe2 FET device was proposed. Within the designed configuration, waste heat in WTe2 would be mostly dissipated to metal contacts located along zigzag, relieving the local temperature discrepancy in the channel effectively and preventing degradation or breakdown. Our study provides new insight into thermal transport of anisotropic 2D materials, which might inspire energy-efficient nanodevices in the future. [ABSTRACT FROM AUTHOR]

The stellar/inertial integrated navigation system, which combines the inertial navigation system (INS) and the star tracker, can restrain the accumulated INS errors. In the traditional loosely coupled stellar/inertial integration method, the star tracker needs to observe more than two navigation stars on an image for attitude determination and to use the attitude information as the observation to estimate the systematic errors of the INS. However, under strong background radiation conditions, the star number in the field of view (FOV) usually drops below 3; thus, the loosely coupled method fails to work. To overcome this difficulty, an improved tightly coupled stellar/inertial integration method based on the observation of the star centroid prediction error (SCPE) is proposed in this paper. It calculates the difference between the extracted star centroid and the predicted star centroid, namely, the SCPE, as the observation and then estimates the INS errors with a Kalman filter. Numerical simulations and ground experiments are conducted to validate the feasibility of the tightly coupled method. It is proved that the proposed method, which makes full use of all star observation information, can improve the navigation accuracy compared with the loosely coupled method and is more robust when there are not enough stars in the FOV. [ABSTRACT FROM AUTHOR]

Semiconducting molybdenum disulfide (MoS2) has drawn a lot of attention for its exceptional electronic and optoelectronic properties. Despite the potential advantages, the large contact resistance at the metal–MoS2 interfaces has been one of the biggest obstacles for the realization of ideal MoS2 transistors. One solution to improve the metal–MoS2 interfaces is to use the graphene electrodes. Here, we provide a selective etching method for fabricating graphene-contacted MoS2 transistors. It has been proved that the graphene could be totally etched with Ar+ plasma treatment, and the multilayer MoS2 flake can also be reduced layer by layer with Ar+ plasma treatment. By etching graphene selectively in graphene–MoS2 heterostructures, one can obtain graphene-contacted MoS2 transistors successfully. The transistor reported in this paper shows an on–off ratio about 106 and a carrier mobility about 42 cm2 V−1 s−1. This selective etching method would be beneficial for some other graphene-contacted electronic devices. [ABSTRACT FROM AUTHOR]

Due to the lack of true ship angular flexure data, it is difficult to evaluate its measurement error of the angular velocity matching method in practice. In this paper, the cause of the measurement error of the ship flexure angle is analyzed in theory, and an evaluation method for the ship angular flexure measurement error based on the principle of relevance is proposed. The proposed method provides a prediction formula to describe the estimation error of the static flexure angle based on the off-diagonal elements of the error covariance matrix P in Kalman filtering. In addition, the optimized coefficient F is introduced to make the prediction error range better describe the real error variation. The optimized coefficient F ensures that the proposed formula has good prediction effects in all three directions. Simulations based on the actual measured ship flexure data are carried out, and the simulation results verify the capability of the prediction formula. The proposed method can be used in the evaluation of the ship flexure measurement error. [ABSTRACT FROM AUTHOR]

Based on the first-principles calculations, we investigate the magnetic and electronic properties of α-graphyne nanoribbons (NRs). We show that all the armchair α-graphyne NRs are nonmagnetic semiconductors with band gaps as a function of ribbon widths. The zigzag α-graphyne NRs are found to have magnetic semiconducting ground state with ferromagnetic ordering at each edge and opposite spin orientation between the two edges. Under the application of transverse electric field, we further predict the existence of half-metallicity in the zigzag NRs which strongly depends on the width of the ribbon. [ABSTRACT FROM AUTHOR]

The twist-angle dependence of exciton absorption in a molybdenum disulfide (MoS2)/graphene heterostructure (MGH) is reported. Using photoluminescence (PL) spectroscopy, we found that, as the twist angle increased, the MGH demonstrated an enhancement of PL intensity and a peak position blueshift, indicating that the exciton radiative recombination was positively correlated with the twist angle. In addition, optical reflectance measurements were performed in order to investigate the exciton absorption in the MGH. It was found that the reflectance of MGH samples was twist-angle dependent at wavelengths of 620 and 670 nm, which corresponds to the PL peak positions of MoS2. This was attributed to the change in interlayer charge transfer for different twist angles. Our findings confirm the tunability of the electronic structure in MGHs via the interlayer twist, which enriches our understanding of interlayer coupling and is important for the future development of electronic and optoelectronic devices based on 2D material heterostructures. [ABSTRACT FROM AUTHOR]

Graphene photodetectors are highly attractive owing to its ultra-fast and wide-range spectral response from visible to infrared benefit from the superior carrier mobility and the linear dispersion with zero bandgap of graphene. The application of graphene photodetectors however is seriously limited by the low intrinsic responsivity in the order of ∼10 mA/W. Here, we demonstrate photogating field-effect transistors based on pure monolayer graphene with simple device structures. The light absorption in the heavily n-doped silicon/silicon oxide (Si/SiO2) substrate generates an additional photovoltage that effectively modulates the conductance of graphene, leading to room temperature graphene photodetectors with high responsivity of ∼500 A/W for 450 nm light and ∼4 A/W for 1064 nm light, respectively. The generated photocurrent changes with applied gate voltage and shows a strongly nonlinear power dependence. Meanwhile, the photoresponse of graphene exhibits a cut-off wavelength of ∼1100 nm, confirming the dominance photogating effect caused by light absorption in Si/SiO2 substrate. Considering the great compatibility of graphene to Si technology, our result paves a way for high-performance chip-integrated photodetectors. [ABSTRACT FROM AUTHOR]

2H phase Molybdenum ditelluride (MoTe2) is a layered two-dimensional (2D) semiconductor that has recently gained extensive attention for its intriguing properties, demonstrating great potential for nanoelectronics and optoelectronics. Optimizing the electric contacts to MoTe2 is a critical step for realizing high performance devices. Here, we demonstrate Co/hBN tunnel contacts to few-layer MoTe2. In sharp contrast to the p-type conduction of Co contacted MoTe2, Co/hBN tunnel contacted MoTe2 devices show clear n-type transport properties. Our first principles calculation reveals that the inserted few-layer hBN strongly interacts with Co and significantly reduces its work-function by ∼1.2 eV, while MoTe2 itself has a much weaker influence on the work-function of Co. This allows us to build MoTe2 diodes using the mixed Co/hBN and Co contact architecture, which can be switched from p-n type to n-p type by changing the gate-voltage, paving the way for engineering multi-functional devices based on atomically thin 2D semiconductors. [ABSTRACT FROM AUTHOR]

Abstract: Semiconducting molybdenum ditelluride (2H‐MoTe2), a fast‐emerging 2D material with an appropriate band gap and decent carrier mobility, is configured as field‐effect transistors and is the focus of substantial research interest, showing hole‐dominated ambipolar characteristics. Here, carrier modulation of ambipolar few‐layer MoTe2 transistors is demonstrated utilizing magnesium oxide (MgO) surface charge transfer doping. By carefully adjusting the thickness of MgO film and the number of MoTe2 layers, the carrier polarity of MoTe2 transistors from p‐type to n‐type can be reversely controlled. The electron mobility of MoTe2 is significantly enhanced from 0.1 to 20 cm2 V−1 s−1 after 37 nm MgO film doping, indicating a greatly improved electron transport. The effective carrier modulation enables to achieve high‐performance complementary inverters with high DC gain of >25 and photodetectors based on few‐layer MoTe2 flakes. The results present an important advance toward the realization of electronic and optoelectronic devices based on 2D transition‐metal dichalcogenide semiconductors. [ABSTRACT FROM AUTHOR]

Non-uniform photocurrent is usually generated at the overlapped region of the heterostructures, and its potential applications may be hindered by the spatial uniformity issue of the device photoresponse. Here, nearly a uniform photoresponse at the overlapped region of the thermally oxidized Ni and molybdenum disulphide (MoS2) heterostructures is obtained. Further characterizations reveal that several nanometers Ni is rightly under the NiOx layer formed at the surface of the film in the oxidation process. The heterostructures based on layered MoS2/NiOx/Ni with highly conductive bottom Ni show a high uniform photoresponse with an external quantum efficiency (EQE) of 1.4% at 532 nm. Moreover, successful integration of multiple devices suggests a great priority for such a structure for highly integrated uniform photodetectors. [ABSTRACT FROM AUTHOR]

Hull structure monitoring is needed to provide healthy suggestions for a ship. Inertial Measurement Units (IMUs) are available for this application. By installing IMUs on different points of the ship hull, the angular velocity and acceleration of each point can be measured. Once the hull flexure changes, the movement parameters of those points will be different, and the hull flexure can be estimated through matching these parameters by a Kalman filter. We deduced proper measurement equations of the Kalman filter, which is essential for the flexure estimation, and designed real data and simulation data experiments to verify the equation. Results showed that the hull structure can be effectively monitored by the proposed method. [ABSTRACT FROM PUBLISHER]

In this paper, we systematically investigated the influence of adhesive residue existing in deterministic transfer process upon graphene, and put forward a rapid and effective way named ultraviolet-ozone (UVO) treatment to reduce this negative effect. Results indicate that this adhesive residue may cause poor contact between metal and graphene, thus greatly degrading the performance of the device. However, this unpleasant influence could be reduced effectively by adopting UVO treatment. This work may be helpful to fabricate higher performance functional devices based on two-dimensional materials by removal of the adhesive residue. A combination of mechanical exfoliation and deterministic transfer technique is mostly adopted to fabricate 2D (two-dimensional) heterostructure samples. However, the PVA (polyvinyl alcohol) sacrificial polymer layer may not be totally removed in the preparation of heterostructures, thus greatly degrading the performance of the device. In this paper, we have successfully removed the adhesive residue by applying ultraviolet-ozone treatment. This work may be helpful to fabricate higher performance functional devices based on 2D materials by removal of the adhesive residue. [ABSTRACT FROM AUTHOR]