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Synapses play a vital role in information processing, learning, and memory formation in the brain. By emulating the behavior of biological synapses, electronic synaptic devices hold the promise of enabling high‐performance, energy‐efficient, and scalable neuromorphic computing. Ferroelectric memristive devices integrate the characteristics of both ferroelectric and memristive materials and present a far‐reaching potential as artificial synapses. Here, it is reported on a new ferroelectric device on silicon, a field‐effect memristor, consisting of an epitaxial ultrathin ferroelectric Hf0.5Zr0.5O2 film sandwiched between an epitaxial highly doped oxide semiconductor SrTiO3‐δ and a top metal. Upon a low voltage of less than 2 V, the field‐effect modulation in the semiconductor enables to access multiple states. The device works in a large time domain ranging from milliseconds down to tens of nanoseconds. By gradually switching the polarization by identical pulses, the ferroelectric diode devices can dynamically adjust the synaptic strength to mimic short‐ and long‐term memory plasticity. Ionic contributions due to redox processes in the oxide semiconductor beneficially influence the device operation and retention. [ABSTRACT FROM AUTHOR]

This paper introduces a novel power supply voltage adjustment strategy that can determine the optimum voltage value based on the amount of absorbed power. The novel automatic voltage adjustment technique was called inverse maximum power point tracking (iMPPT). The proposed control strategy consists of a modified maximum power point tracking (MPPT) algorithm (more precisely the P&O method). In this case, the modified MPPT technique establishes the minimum value of the input absorbed power of a consumer load served by a switched-mode power supply (SMPS). The iMPPT adjusts the input power by modifying the input voltage of the main power supply. The served loads are connected to the variable power supply via an interfacing power electronics converter that performs the automatic voltage regulation function (AVR). The optimal value of the input voltage level can be achieved when the input power of the automatic voltage regulation converter is at a minimum. In that case, the energy conversion efficiency ratio is at a maximum, and the overall losses related to the front-end power stage are at a minimum. The proposed technique can also be considered a Maximum Efficiency Tracking (MET) method. By performing the inverse operation of a maximum power point tracking algorithm on the input demanded power of a switched mode power supply (SMPS), the optimum input voltage level can be determined when the maximum energy conversion ratio (related to a given load level) is achieved. The novel proposed iMPPT method can improve the energy conversion ratio from 85% up to approximately 10% in the case of an output power level of 800 W served by a synchronous buck converter at the input voltage level of 350 V. The total amount of recovered power in this situation can be approximately 100 W. [ABSTRACT FROM AUTHOR]

Fine-tuning of grain sizes can significantly influence the interaction between different dielectric phenomena, allowing the development of materials with tailored dielectric resistivity. By virtue of various synthesis mechanisms, a pathway to manipulate grain sizes and, consequently, tune the material's dielectric response is revealed. Understanding these intricate relationships between granulation and dielectric properties can pave the way for designing and optimizing materials for specific applications where tailored dielectric responses are sought. The experimental part involved the fabrication of dense BCT-BZT ceramics with different grain sizes by varying the synthesis (conventional solid-state reaction route and sol-gel) and consolidation methods. Both consolidation methods produced well-crystallized specimens, with Ba0.85Ca0.15O3Ti0.9Zr0.1 (BCTZ) perovskite as the major phase. Conventional sintering resulted in microstructured and submicron-structured BCT-BZT ceramics, with average grain sizes of 2.35 μm for the solid-state sample and 0.91 μm for the sol-gel synthesized ceramic. However, spark plasma sintering produced a nanocrystalline specimen with an average grain size of 67.5 nm. As the grain size decreases, there is a noticeable decrease in the maximum permittivity, a significant reduction in dielectric losses, and a shifting of the Curie temperature towards lower values. [ABSTRACT FROM AUTHOR]

Pb(Zr,Ti)O3 (PZT) is the most common ferroelectric (FE) material widely used in solid‐state technology. Despite intense studies of PZT over decades, its intrinsic band structure, electron energy depending on 3D momentum k, is still unknown. Here, Pb(Zr0.2Ti0.8)O3 using soft‐X‐ray angle‐resolved photoelectron spectroscopy (ARPES) is explored. The enhanced photoelectron escape depth in this photon energy range allows sharp intrinsic definition of the out‐of‐plane momentum k and thereby of the full 3D band structure. Furthermore, the problem of sample charging due to the inherently insulating nature of PZT is solved by using thin‐film PZT samples, where a thickness‐induced self‐doping results in their heavy doping. For the first time, the soft‐X‐ray ARPES experiments deliver the intrinsic 3D band structure of PZT as well as the FE‐polarization dependent electrostatic potential profile across the PZT film deposited on SrTiO3 and LaxSrMn1−xO3 substrates. The negative charges near the surface, required to stabilize the FE state pointing away from the sample (P+), are identified as oxygen vacancies creating localized in‐gap states below the Fermi energy. For the opposite polarization state (P−), the positive charges near the surface are identified as cation vacancies resulting from non‐ideal stoichiometry of the PZT film as deduced from quantitative XPS measurements. [ABSTRACT FROM AUTHOR]

We investigate the dynamic behavior of perovskite solar cells by focusing on the relaxation time τ, which corresponds to the slow de-polarization process from an initial bias pre-poled state. The dynamic electrical model (DEM) is employed for simulating the J-V characteristics for different bias scan rates and pre-poling conditions. Depending on the sign of the initial polarization normal or inverted hysteresis may be induced. For fixed pre-poling conditions, the relaxation time, in relation to the bias scan rate, governs the magnitude of the dynamic hysteresis. In the limit of large τ the hysteretic effects are vanishing for the typical range of bias scan rates considered, while for very small τ the hysteresis is significant only when it is comparable with the measurement time interval.

Electrocaloric effect is the adiabatic temperature change in a dielectric material when an electric field is applied or removed, and it can be considered as an alternative refrigeration method. Materials with ferroelectric order exhibit large temperature variations in the vicinity of a phase transition, while antiferroelectrics and relaxors may exhibit a negative electrocaloric effect. In this study, the temperature variation in polarization was investigated for epitaxial ferroelectric thin film structures based on PbZrTiO3 materials in simple or complex multilayered structures. We propose the intriguing possibility of a giant negative electrocaloric effect (ΔT = −3.7 K at room temperature and ΔT = −5.5 K at 370 K) in a simple epitaxial Pb(ZrTi)O3 capacitor. Furthermore, it was shown that abnormal temperature variation in polarization is dependent on the non-FE component introduced in a multilayered structure. No significant variation in polarization with temperature was obtained for PZT/STON multilayered structures around room temperature. However, for PZT/BST or PZT/Nb2O5 multilayers, an abnormal temperature variation in polarization was revealed, which was similar to a simple PZT layer. The giant and negative ∆T values were attributed to internal fields and defects formed due to the large depolarization fields when the high polarization of the FE component was not fully compensated either by the electrodes or by the interface with an insulator layer. The presented results make Pb(ZrTi)O3-based structures promising for cooling applications operating near room temperature. [ABSTRACT FROM AUTHOR]

Antiferroelectric random access memory (AFERAM) is one of the newest alternative non-volatile memory technologies to emerge in recent years. ZrO2-based antiferroelectric films are exceptionally well-suited for memory applications with very high cycling endurance (>1010) and low operating voltages (< 2 V). Lightly alloying ZrO2 with HfO2 is performed to assess AFERAM device performance with back-end-of-line compatible thin film Zr1−xHfxO2 (x $\le0.13$) capacitors. The transition fields associated with antiferroelectric behavior are reduced with more Hf incorporation, yielding a larger magnitude switching polarization and memory window. Cycling endurance beyond 1010 cycles is conducted on thin film capacitors where wake-up in AFERAM first leads to an increase, then a decrease in the memory window at a cumulative cycle number found to be dependent on the amount of Hf-incorporation. Hf-incorporation into ZrO2 is demonstrated to be a feasible way to improve the memory window in ZrO2-based AFERAM. [ABSTRACT FROM AUTHOR]

In this paper, a Power Factor Correction (PFC) application, based on the novel power stage topology named Independent Double-Boost Interleaved Converter (IDBIC), has been analyzed. The novelty of the proposed PFC rectifier is based on the sum of capabilities, such as supplying three independent output voltage levels with interleaved operation at the input and high voltage gain. The hardware used within this application consists of an AC input L-C-L filter, a single-phase bridge rectifier, the IDBIC power stage, output capacitors group and a group of variable high-power rheostats (resistors) group as DC load. The main purpose of the carried study was to highlight the advantages and disadvantages of the novel power stage topology in the context of a green and modern AC to DC conversion solution. Nowadays, a high level of the efficiency and power factor have become a mandatory feature for the AC to DC conversion solutions to satisfy the international electrical standards. Thus, considering the modern electrical standards and recommendations, the current study tries to better depict the working steps and principles of the modern power stage topology within an AC to DC conversion application. The behavior of the considered power stage described in different detailed working steps (such as the Discontinuous Conduction Mode and Continuous Conduction Mode) may help understand how the energy conversions process of AC to DC becomes more efficient. The high output voltage gain of the considered power stage is the key feature in the Power Factor Correction process. With such a feature, the AC to DC conversion solution/application can also operate at lower input AC voltages (such as 90 [V] and 110 [V]). The proposed solution can be successfully used in the electric vehicle (automotive field) and high-power electrical traction (e.g., trains, high power electrical machines and drives). The same solution can also be used successfully in fast battery charging applications and chemical electrolysis processes. [ABSTRACT FROM AUTHOR]

As ferroelectric Hf0.5Zr0.5O2 (HZO) thickness scales below 10 nm, the switching characteristics are severely distorted typically showing an antiferroelectric-like behavior (pinched hysteresis) with reduced remanent polarization. Using Landau-Ginsburg-Devonshire (LGD) theory for the analysis of the experimental results, it is shown here that, in thin (5 nm) HZO, depolarization fields drive the system in a stable paraelectric phase coexisting with a metastable ferroelectric one, which explains the pinched hysteresis. This state of matter resembles a first order ferroelectric above the Curie temperature which is known to result in similar double-loop behavior. Here, based on the analysis of experimental data in the framework of LGD theory, it is reported that charge injection and trapping at pre-existing interface defects during field cycling ("wake-up") screens the depolarization field stabilizing ferroelectricity. It is found in particular that a sufficiently large energy density of interface states is beneficial for the recovery of fully open ferroelectric loops. HfO2-based ferroelectric materials have immense technological potential and so significant attention has been given to improve the ferroelectric properties at low-thickness. Here, using Landau Devonshire theory, the authors show the origin of pinched hysteresis loops is connected with the existence of pronounced depolarizing fields which are minimized during field cycling recovering the full ferroelectric loops. [ABSTRACT FROM AUTHOR]

The ferroelectric and pyroelectric properties of bismuth ferrite (BFO) epitaxial thin film have been investigated. The ferroelectric epitaxial thin layer has been deposited on strontium titanate (STO) (001) substrate by pulsed laser deposition, in a capacitor geometry using as top and bottom electrode a conductive oxide of strontium ruthenate (SRO). The structural characterizations performed by X-ray diffraction and atomic force microscopy demonstrate the epitaxial character of the ferroelectric thin film. The macroscopic ferroelectric characterization of BFO revealed a rectangular shape of a polarization-voltage loop with a remnant polarization of 30 μC/c m2 and a coercive electric field of 633 KV/cm at room temperature. Due to low leakage current, the BFO capacitor structure could be totally pooled despite large coercive fields. A strong variation of polarization is obtained in 80–400 K range which determines a large pyroelectric coefficient of about 10−4 C/m2 K deduced both by an indirect and also by a direct method. [ABSTRACT FROM AUTHOR]

This paper reports the synthesis and characterization of Cu2ZnSnS4 (CZTS) absorber films, prepared by a two-step electrodeposition of a ZnS (zinc sulfide) binary and a CZT (copper, zinc and tin) ternary precursors on Mo/Ti/Si substrates. The as-electrodeposited ZnS/CZT and CZT/ZnS stacks were thermally treated in a tubular furnace in sulfur environment at 550 °C. The role of the ZnS buffer layer is to provide a zinc and sulfur reservoir, needed to complete the formation of kesterite phase. X-ray diffraction and Raman analyses revealed the formation of the CZTS phase. The surface morphology and chemical composition of the films were studied using a scanning electron microscope. The bandgap values inferred from diffuse reflectance data, are discussed with respect to the stoichiometry which is considerably affected by the order of the stacks. Room-temperature photoluminescence of the CZT/ZnS sample showed a board PL band of 1.51 eV. It was found that the film with a ZnS layer on top is preferred for the formation of a Zn-rich single CZTS phase. [ABSTRACT FROM AUTHOR]

The role of Ag addition on the structural, dielectric, and mechanical harvesting response of 20%(xAg − (1 − x)BaTiO3) − 80%PVDF (x = 0, 2, 5, 7 and 27 vol.%) flexible composites is investigated. The inorganic fillers were realized by precipitating fine (~3 nm) silver nanoparticles onto BaTiO3 nanoparticles (~60 nm average size). The hybrid admixtures with a total filling factor of 20 vol.% were embedded into the PVDF matrix. The presence of filler enhances the amount of β-PVDF polar phase and the BaTiO3 filler induces an increase of the permittivity from 11 to 18 (1 kHz) in the flexible composites. The addition of increasing amounts of Ag is further beneficial for permittivity increase; with the maximum amount (x = 27 vol.%), permittivity is three times larger than in pure PVDF ( ε r ~ 33 at 1 kHz) with a similar level of tangent losses. This result is due to the local field enhancement in the regions close to the filler-PVDF interfaces which are additionally intensified by the presence of silver nanoparticles. The metallic addition is also beneficial for the mechanical harvesting ability of such composites: the amplitude of the maximum piezoelectric-triboelectric combined output collected in open circuit conditions increases from 0.2 V/cm2 (PVDF) to 30 V/cm2 for x = 27 vol.% Ag in a capacitive configuration. The role of ferroelectric and metallic nanoparticles on the increasing mechanical-electric conversion response is also been explained. [ABSTRACT FROM AUTHOR]

Fe (acceptor) and Nb (donor) doped epitaxial Pb(Zr0.2Ti0.8)O3 (PZT) films were grown on single crystal SrTiO3 substrates and their electric properties were compared to those of un-doped PZT layers deposited in similar conditions. All the films were grown from targets produced from high purity precursor oxides and the doping was in the limit of 1% atomic in both cases. The remnant polarization, the coercive field and the potential barriers at electrode interfaces are different, with lowest values for Fe doping and highest values for Nb doping, with un-doped PZT in between. The dielectric constant is larger in the doped films, while the effective density of charge carriers is of the same order of magnitude. An interesting result was obtained from piezoelectric force microscopy (PFM) investigations. It was found that the as-grown Nb-doped PZT has polarization orientated upward, while the Fe-doped PZT has polarization oriented mostly downward. This difference is explained by the change in the conduction type, thus in the sign of the carriers involved in the compensation of the depolarization field during the growth. In the Nb-doped film the majority carriers are electrons, which tend to accumulate to the growing surface, leaving positively charged ions at the interface with the bottom SrRuO3 electrode, thus favouring an upward orientation of polarization. For Fe-doped film the dominant carriers are holes, thus the sign of charges is opposite at the growing surface and the bottom electrode interface, favouring downward orientation of polarization. These findings open the way to obtain p-n ferroelectric homojunctions and suggest that PFM can be used to identify the type of conduction in PZT upon the dominant direction of polarization in the as-grown films. [ABSTRACT FROM AUTHOR]