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In this paper, we examine the problem of the drift of the low-resistance state (LRS) in phase change memories based on C or N doped and undoped Ge-rich Ge2Sb2Te5 . A novel procedure, named R–SET technique, is proposed to boost the SET speed of these innovative phase change materials by overcoming the decrease of crystallization speed caused by Ge enrichment. The R–SET technique allows, at the same time, an optimized SET programming of the memory cell and the reduction of the LRS drift with respect to standard SET procedures. A circuit that generates the desired R–SET pulse based on a time reference scheme is proposed and discussed. [ABSTRACT FROM PUBLISHER]

In this letter, we present a study on the electrical behavior of phase-change memories (PCMs) based on a GeTe active material. GeTe PCMs show, first, extremely rapid SET operation (yielding a gain of more than one decade in energy per bit with respect to standard GST PCMs), second, robust cycling, up to 1 x 105, with 30-ns SET and RESET stress time, and third, a better retention behavior at high temperature with respect to GST PCMs. These results, obtained on single cells, suggest GeTe as a promising alternative material to standard GST to improve PCM performance and reliability. [ABSTRACT FROM AUTHOR]