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Nanostructured γ-CuI thin film is grown on copper and Y-cut SiO2 single crystal substrates by a new method of hydrothermal evaporation of solution at low temperature of 200 °C. Cuprous iodide nanostructure is grown at various growth time of 0.5, 1, and 1.5 h. The morphology and crystal structure of deposited layers are evaluated by field emission scanning electron microscopy and X-ray diffraction, respectively. Electrical properties of deposited thin films are investigated by 2-point probe measurement. The results show that pure single crystalline CuI nanocrystals are grown on the Cu substrate at low temperature and growth time of 200 °C and 0.5 h. The main mechanism in plate-like structure of nanocrystals is the crystal growth from polar direction of CuI. In addition, increasing the growth time not only causes larger size of crystal and particles, but also increases the thickness and ohmic resistance of CuI thin films. [ABSTRACT FROM AUTHOR]