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1,121 results on '"Muller, David A."'

3. Spin disorder control of topological spin texture

Author

Zhang, Hongrui, Shao, Yu-Tsun, Chen, Xiang, Zhang, Binhua, Wang, Tianye, Meng, Fanhao, Xu, Kun, Meisenheimer, Peter, Chen, Xianzhe, Huang, Xiaoxi, Behera, Piush, Husain, Sajid, Zhu, Tiancong, Pan, Hao, Jia, Yanli, Settineri, Nick, Giles-Donovan, Nathan, He, Zehao, Scholl, Andreas, N’Diaye, Alpha, Shafer, Padraic, Raja, Archana, Xu, Changsong, Martin, Lane W., Crommie, Michael F., Yao, Jie, Qiu, Ziqiang, Majumdar, Arun, Bellaiche, Laurent, Muller, David A., Birgeneau, Robert J., and Ramesh, Ramamoorthy

Published
2024
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4. Giant bulk spin-orbit torque and efficient electrical switching in single ferrimagnetic FeTb layers with strong perpendicular magnetic anisotropy

Author

Liu, Qianbiao, Zhu, Lijun, Zhang, Xiyue S., Muller, David A., and Ralph, Daniel C.

Subjects
Condensed Matter - Materials Science, Physics - Applied Physics
Abstract

Efficient manipulation of antiferromagnetically coupled materials that are integration-friendly and have strong perpendicular magnetic anisotropy (PMA) is of great interest for low-power, fast, dense magnetic storage and computing. Here, we report a distinct, giant bulk damping-like spin-orbit torque in strong-PMA ferrimagnetic Fe100-xTbx single layers that are integration-friendly (composition-uniform, amorphous, sputter-deposited). For sufficiently-thick layers, this bulk torque is constant in the efficiency per unit layer thickness, {\xi}_DL^j/t, with a record-high value of 0.036nm-1, and the dampinglike torque efficiency {\xi}_DL^j achieves very large values for thick layers, up to 300% for 90 nm layers. This giant bulk torque by itself switches tens of nm thick Fe100-xTbx layers that have very strong PMA and high coercivity at current densities as low as a few MA/cm2. Surprisingly, for a given layer thickness, {\xi}_DL^j shows strong composition dependence and becomes negative for composition where the total angular momentum is oriented parallel to the magnetization rather than antiparallel. Our findings of giant bulk spin torque efficiency and intriguing torque-compensation correlation will stimulate study of such unique spin-orbit phenomena in a variety of ferrimagnetic hosts. This work paves a promising avenue for developing ultralow-power, fast, dense ferrimagnetic storage and computing devices., Comment: To appear in Applied Physics Reviews

Published
2022
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5. Outcomes Following Transcatheter Mitral Valve Replacement Using Dedicated Devices in Patients With Mitral Annular Calcification

Author

Coisne, Augustin, Ludwig, Sebastian, Scotti, Andrea, Ben Ali, Walid, Weimann, Jessica, Duncan, Alison, Webb, John G., Kalbacher, Daniel, Rudolph, Tanja K., Nickenig, Georg, Hausleiter, Jörg, Ruge, Hendrik, Adam, Matti, Petronio, Anna S., Dumonteil, Nicolas, Søndergaard, Lars, Adamo, Marianna, Regazzoli, Damiano, Garatti, Andrea, Schmidt, Tobias, Dahle, Gry, Taramasso, Maurizio, Walther, Thomas, Kempfert, Joerg, Obadia, Jean-François, Redwood, Simon, Tang, Gilbert H.L., Goel, Sachin, Fam, Neil, Metra, Marco, Andreas, Martin, Muller, David W., Denti, Paolo, Praz, Fabien, von Bardeleben, Ralph Stephan, Leroux, Lionel, Latib, Azeem, Granada, Juan F., Conradi, Lenard, and Modine, Thomas

Published
2024
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9. Outcomes After Transcatheter Mitral Valve Replacement According to Regurgitation Etiology

Author

Perrin, Nils, Ben-Ali, Walid, Ludwig, Sebastian, Duncan, Alison, Weimann, Jessica, Nickenig, Georg, Tanaka, Tetsu, Coisne, Augustin, Vincentelli, Andre, Makkar, Raj, Webb, John G., Akodad, Mariama, Muller, David W.M., Jansz, Paul, Praz, Fabien, Reineke, David, Wild, Mirjam G., Hausleiter, Jörg, Goel, Sachin S., Denti, Paolo, Chehab, Omar, Dahle, Gry, Baldus, Stephan, Ruge, Hendrik, Kaneko, Tsuyoshi, Ternacle, Julien, Dumonteil, Nicolas, von Bardeleben, Ralph Stephan, Flagiello, Michele, Walther, Thomas, Taramasso, Maurizio, Søndergaard, Lars, Bleiziffer, Sabine, Fam, Neil, Kempfert, Joerg, Granada, Juan F., Tang, Gilbert H.L., Conradi, Lenard, and Modine, Thomas

Published
2024
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12. Genome-wide association meta-analysis of spontaneous coronary artery dissection identifies risk variants and genes related to artery integrity and tissue-mediated coagulation

Author

Adlam, David, Berrandou, Takiy-Eddine, Georges, Adrien, Nelson, Christopher P., Giannoulatou, Eleni, Henry, Joséphine, Ma, Lijiang, Blencowe, Montgomery, Turley, Tamiel N., Yang, Min-Lee, Chopade, Sandesh, Finan, Chris, Braund, Peter S., Sadeg-Sayoud, Ines, Iismaa, Siiri E., Kosel, Matthew L., Zhou, Xiang, Hamby, Stephen E., Cheng, Jenny, Liu, Lu, Tarr, Ingrid, Muller, David W. M., d’Escamard, Valentina, King, Annette, Brunham, Liam R., Baranowska-Clarke, Ania A., Debette, Stéphanie, Amouyel, Philippe, Olin, Jeffrey W., Patil, Snehal, Hesselson, Stephanie E., Junday, Keerat, Kanoni, Stavroula, Aragam, Krishna G., Butterworth, Adam S., Tweet, Marysia S., Gulati, Rajiv, Combaret, Nicolas, Kadian-Dodov, Daniella, Kalman, Jonathan M., Fatkin, Diane, Hingorani, Aroon D., Saw, Jacqueline, Webb, Tom R., Hayes, Sharonne N., Yang, Xia, Ganesh, Santhi K., Olson, Timothy M., Kovacic, Jason C., Graham, Robert M., Samani, Nilesh J., and Bouatia-Naji, Nabila

Published
2023
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13. Electron ptychography achieves atomic-resolution limits set by lattice vibrations

Author

Chen, Zhen, Jiang, Yi, Shao, Yu-Tsun, Holtz, Megan E., Odstrčil, Michal, Guizar-Sicairos, Manuel, Hanke, Isabelle, Ganschow, Steffen, Schlom, Darrell G., and Muller, David A.

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Strongly Correlated Electrons
Abstract

Transmission electron microscopes use electrons with wavelengths of a few picometers, potentially capable of imaging individual atoms in solids at a resolution ultimately set by the intrinsic size of an atom. Unfortunately, due to imperfections in the imaging lenses and multiple scattering of electrons in the sample, the image resolution reached is 3 to 10 times worse. Here, by inversely solving the multiple scattering problem and overcoming the aberrations of the electron probe using electron ptychography to recover a linear phase response in thick samples, we demonstrate an instrumental blurring of under 20 picometers. The widths of atomic columns in the measured electrostatic potential are now no longer limited by the imaging system, but instead by the thermal fluctuations of the atoms. We also demonstrate that electron ptychography can potentially reach a sub-nanometer depth resolution and locate embedded atomic dopants in all three dimensions with only a single projection measurement., Comment: 13 pages and 4 figures in the main text. Supplementary materials included

Published
2021
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14. $\gamma$-phase Inclusions as Common Defects in Alloyed $\beta$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ and Doped $\beta$-Ga$_2$O$_3$ Films

Author

Chang, Celesta S., Tanen, Nicholas, Protasenko, Vladimir, Asel, Thaddeus J., Mou, Shin, Xing, Huili Grace, Jena, Debdeep, and Muller, David A.

Subjects
Condensed Matter - Materials Science, Physics - Applied Physics
Abstract

$\beta$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $\gamma$-phase is a ubiquitous defect in both $\beta$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films and doped $\beta$-Ga$_2$O$_3$ films grown by molecular beam epitaxy. For undoped $\beta$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films we observe $\gamma$-phase inclusions between nucleating islands of the $\beta$-phase at lower growth temperatures (~400-600 $^{\circ}$C). In doped $\beta$-Ga$_2$O$_3$, a thin layer of the $\gamma$-phase is observed on the surfaces of films grown with a wide range of n-type dopants and dopant concentrations. The thickness of the $\gamma$-phase layer was most strongly correlated with the growth temperature, peaking at about 600 $^{\circ}$C. Ga interstitials are observed in $\beta$-phase, especially near the interface with the $\gamma$-phase. By imaging the same region of the surface of a Sn-doped $\beta$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ after ex-situ heating up to 400 $^{\circ}$C, a $\gamma$-phase region is observed to grow above the initial surface, accompanied by a decrease in Ga interstitials in the $\beta$-phase. This suggests that the diffusion of Ga interstitials towards the surface is likely the mechanism for growth of the surface $\gamma$-phase, and more generally that the more-open $\gamma$-phase may offer diffusion pathways to be a kinetically-favored and early-forming phase in the growth of Ga$_2$O$_3$.

Published
2020
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21. Non-volatile electric-field control of inversion symmetry

Author

Caretta, Lucas, Shao, Yu-Tsun, Yu, Jia, Mei, Antonio B., Grosso, Bastien F., Dai, Cheng, Behera, Piush, Lee, Daehun, McCarter, Margaret, Parsonnet, Eric, K. P, Harikrishnan, Xue, Fei, Guo, Xiangwei, Barnard, Edward S., Ganschow, Steffen, Hong, Zijian, Raja, Archana, Martin, Lane W., Chen, Long-Qing, Fiebig, Manfred, Lai, Keji, Spaldin, Nicola A., Muller, David A., Schlom, Darrell G., and Ramesh, Ramamoorthy

Published
2023
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22. Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy

Author

Vogt, Patrick, Hensling, Felix V. E., Azizie, Kathy, Chang, Celesta S., Turner, David, Park, Jisung, McCandless, Jonathan P., Paik, Hanjong, Bocklund, Brandon J., Hoffman, Georg, Bierwagen, Oliver, Jena, Debdeep, Xing, Huili G., Mou, Shin, Muller, David A., Shang, Shun-Li, Liu, Zi-Kui, and Schlom, Darrell G.

Subjects
Condensed Matter - Materials Science
Abstract

This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the adsorption-controlled growth of Ga2O3 by MBE. We present growth rates up to 1.6 micrometer per hour for Ga2O3--Al2O3 heterostructures with unprecedented crystalline quality and also at unparalleled low growth temperature for this level of perfection. We combine thermodynamic knowledge of how to create molecular-beams of targeted suboxides with a kinetic model developed for the S-MBE of III-VI compounds to identify appropriate growth conditions. Using S-MBE we demonstrate the growth of phase-pure, smooth, and high-purity homoepitaxial Ga2O3 films that are thicker than 4 micrometer. With the high growth rate of S-MBE we anticipate a significant improvement to vertical Ga2O3-based devices. We describe and demonstrate how this growth method can be applied to a wide-range of oxides. S-MBE rivals leading synthesis methods currently used for the production of Ga2O3-based devices., Comment: 15 pages, 12 figures

Published
2020
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24. Operando methods: A new era of electrochemistry

Author

Yang, Yao, Feijóo, Julian, Briega-Martos, Valentín, Li, Qihao, Krumov, Mihail, Merkens, Stefan, De Salvo, Giuseppe, Chuvilin, Andrey, Jin, Jianbo, Huang, Haowei, Pollock, Christopher J., Salmeron, Miquel B., Wang, Cheng, Muller, David A., Abruña, Héctor D., and Yang, Peidong

Published
2023
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26. Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time.

Author

Gann, Katie R., Pieczulewski, Naomi, Gorsak, Cameron A., Heinselman, Karen, Asel, Thaddeus J., Noesges, Brenton A., Smith, Kathleen T., Dryden, Daniel M., Xing, Huili Grace, Nair, Hari P., Muller, David A., and Thompson, Michael O.

Subjects
SCANNING transmission electron microscopy, RUTHERFORD backscattering spectrometry, MOLECULAR beam epitaxy, LOW temperatures
Abstract

Optimizing thermal anneals of Si-implanted β-Ga2O3 is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on the activation of room temperature ion-implanted Si in β-Ga2O3 at concentrations from 5 × 1018 to 1 × 1020 cm−3, demonstrating full activation (>80% activation, mobilities >70 cm2/V s) with contact resistances below 0.29 Ω mm. Homoepitaxial β-Ga2O3 films, grown by plasma-assisted molecular beam epitaxy on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5 × 1018, 5 × 1019, and 1 × 1020 cm−3. Anneals were performed in an ultra-high vacuum-compatible quartz furnace at 1 bar with well-controlled gas compositions. To maintain β-Ga2O3 stability, pO2 must be greater than 10−9 bar. Anneals up to pO2 = 1 bar achieve full activation at 5 × 1018 cm−3, while 5 × 1019 cm−3 must be annealed with pO2 ≤ 10−4 bar, and 1 × 1020 cm−3 requires pO2 < 10−6 bar. Water vapor prevents activation and must be maintained below 10−8 bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperatures up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 min with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5 × 1019 cm−3 and occurs rapidly at 1 × 1020 cm−3. Rutherford backscattering spectrometry (channeling) suggests that damage recovery is seeded from remnant aligned β-Ga2O3 that remains after implantation; this conclusion is also supported by scanning transmission electron microscopy showing retention of the β-phase with inclusions that resemble the γ-phase. [ABSTRACT FROM AUTHOR]

Published
2024
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28. Design and methodological considerations for biomarker discovery and validation in the Integrative Analysis of Lung Cancer Etiology and Risk (INTEGRAL) Program

Author

Robbins, Hilary A., Alcala, Karine, Moez, Elham Khodayari, Guida, Florence, Thomas, Sera, Zahed, Hana, Warkentin, Matthew T., Smith-Byrne, Karl, Brhane, Yonathan, Muller, David, Feng, Xiaoshuang, Albanes, Demetrius, Aldrich, Melinda C., Arslan, Alan A., Bassett, Julie, Berg, Christine D., Cai, Qiuyin, Chen, Chu, Davies, Michael P.A., Diergaarde, Brenda, Field, John K., Freedman, Neal D., Huang, Wen-Yi, Johansson, Mikael, Jones, Michael, Koh, Woon-Puay, Lam, Stephen, Lan, Qing, Langhammer, Arnulf, Liao, Linda M., Liu, Geoffrey, Malekzadeh, Reza, Milne, Roger L., Montuenga, Luis M., Rohan, Thomas, Sesso, Howard D., Severi, Gianluca, Sheikh, Mahdi, Sinha, Rashmi, Shu, Xiao-Ou, Stevens, Victoria L., Tammemägi, Martin C., Tinker, Lesley F., Visvanathan, Kala, Wang, Ying, Wang, Renwei, Weinstein, Stephanie J., White, Emily, Wilson, David, Yuan, Jian-Min, Zhang, Xuehong, Zheng, Wei, Amos, Christopher I., Brennan, Paul, Johansson, Mattias, and Hung, Rayjean J.

Published
2023
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31. A polarization-induced 2D hole gas in undoped gallium nitride quantum wells

Author

Chaudhuri, Reet, Bader, Samuel James, Chen, Zhen, Muller, David A., Huili, Xing, and Jena, Debdeep

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped gallium nitride quantum wells. Experimental results provide unambiguous proof that a 2D hole gas in GaN grown on AlN does not need acceptor doping, and can be formed entirely by the difference in the internal polarization fields across the semiconductor heterojunction. The measured 2D hole gas densities, about $4 \times 10^{13}$ cm$^{-2}$, are among the highest among all known semiconductors and remain unchanged down to cryogenic temperatures. Some of the lowest sheet resistances of all wide-bandgap semiconductors are seen. The observed results provide a new probe for studying the valence band structure and transport properties of wide-bandgap nitride interfaces, and simultaneously enable the missing component for gallium nitride-based p-channel transistors for energy-efficient electronics., Comment: 20 pages, 4 + 2 figures

Published
2018
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34. Transcatheter Mitral Valve Replacement Versus Medical Therapy for Secondary Mitral Regurgitation: A Propensity Score–Matched Comparison

Author

Ludwig, Sebastian, Conradi, Lenard, Cohen, David J., Coisne, Augustin, Scotti, Andrea, Abraham, William T., Ben Ali, Walid, Zhou, Zhipeng, Li, Yanru, Kar, Saibal, Duncan, Alison, Lim, D. Scott, Adamo, Marianna, Redfors, Björn, Muller, David W.M., Webb, John G., Petronio, Anna S., Ruge, Hendrik, Nickenig, Georg, Sondergaard, Lars, Adam, Matti, Regazzoli, Damiano, Garatti, Andrea, Schmidt, Tobias, Andreas, Martin, Dahle, Gry, Walther, Thomas, Kempfert, Joerg, Tang, Gilbert H.L., Redwood, Simon, Taramasso, Maurizio, Praz, Fabien, Fam, Neil, Dumonteil, Nicolas, Obadia, Jean-François, von Bardeleben, Ralph Stephan, Rudolph, Tanja K., Reardon, Michael J., Metra, Marco, Denti, Paolo, Mack, Michael J., Hausleiter, Jörg, Asch, Federico M., Latib, Azeem, Lindenfeld, JoAnn, Modine, Thomas, Stone, Gregg W., and Granada, Juan F.

Published
2023
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38. Pan-cancer analysis of pre-diagnostic blood metabolite concentrations in the European Prospective Investigation into Cancer and Nutrition

Author

Breeur, Marie, Ferrari, Pietro, Dossus, Laure, Jenab, Mazda, Johansson, Mattias, Rinaldi, Sabina, Travis, Ruth C., His, Mathilde, Key, Tim J., Schmidt, Julie A., Overvad, Kim, Tjønneland, Anne, Kyrø, Cecilie, Rothwell, Joseph A., Laouali, Nasser, Severi, Gianluca, Kaaks, Rudolf, Katzke, Verena, Schulze, Matthias B., Eichelmann, Fabian, Palli, Domenico, Grioni, Sara, Panico, Salvatore, Tumino, Rosario, Sacerdote, Carlotta, Bueno-de-Mesquita, Bas, Olsen, Karina Standahl, Sandanger, Torkjel Manning, Nøst, Therese Haugdahl, Quirós, J. Ramón, Bonet, Catalina, Barranco, Miguel Rodríguez, Chirlaque, María-Dolores, Ardanaz, Eva, Sandsveden, Malte, Manjer, Jonas, Vidman, Linda, Rentoft, Matilda, Muller, David, Tsilidis, Kostas, Heath, Alicia K., Keun, Hector, Adamski, Jerzy, Keski-Rahkonen, Pekka, Scalbert, Augustin, Gunter, Marc J., and Viallon, Vivian

Published
2022
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39. Circulating inflammatory biomarkers, adipokines and breast cancer risk—a case-control study nested within the EPIC cohort

Author

Cairat, Manon, Rinaldi, Sabina, Navionis, Anne-Sophie, Romieu, Isabelle, Biessy, Carine, Viallon, Vivian, Olsen, Anja, Tjønneland, Anne, Fournier, Agnès, Severi, Gianluca, Kvaskoff, Marina, Fortner, Renée T., Kaaks, Rudolf, Aleksandrova, Krasimira, Schulze, Matthias B., Masala, Giovanna, Tumino, Rosario, Sieri, Sabina, Grasso, Chiara, Mattiello, Amalia, Gram, Inger T., Olsen, Karina Standahl, Agudo, Antonio, Etxezarreta, Pilar Amiano, Sánchez, Maria-Jose, Santiuste, Carmen, Barricarte, Aurelio, Monninkhof, Evelyn, Hiensch, Anouk E., Muller, David, Merritt, Melissa A., Travis, Ruth C., Weiderpass, Elisabete, Gunter, Marc J., and Dossus, Laure

Published
2022
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40. Real-time 3D analysis during electron tomography using tomviz

Author

Schwartz, Jonathan, Harris, Chris, Pietryga, Jacob, Zheng, Huihuo, Kumar, Prashant, Visheratina, Anastasiia, Kotov, Nicholas A., Major, Brianna, Avery, Patrick, Ercius, Peter, Ayachit, Utkarsh, Geveci, Berk, Muller, David A., Genova, Alessandro, Jiang, Yi, Hanwell, Marcus, and Hovden, Robert

Published
2022
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41. A Prospective Diet-Wide Association Study for Risk of Colorectal Cancer in EPIC

Author

Papadimitriou, Nikos, Bouras, Emmanouil, van den Brandt, Piet A., Muller, David C., Papadopoulou, Areti, Heath, Alicia K., Critselis, Elena, Gunter, Marc J., Vineis, Paolo, Ferrari, Pietro, Weiderpass, Elisabete, Boeing, Heiner, Bastide, Nadia, Merritt, Melissa A., Lopez, David S., Bergmann, Manuela M., Perez-Cornago, Aurora, Schulze, Matthias, Skeie, Guri, Srour, Bernard, Eriksen, Anne Kirstine, Boden, Stina, Johansson, Ingegerd, Nøst, Therese Haugdahl, Lukic, Marco, Ricceri, Fulvio, Ericson, Ulrika, Huerta, José María, Dahm, Christina C., Agnoli, Claudia, Amiano, Pilar Exezarreta, Tjønneland, Anne, Gurrea, Aurelio Barricarte, Bueno-de-Mesquita, Bas, Ardanaz, Eva, Berntsson, Jonna, Sánchez, Maria-Jose, Tumino, Rosario, Panico, Salvatore, Katzke, Verena, Jakszyn, Paula, Masala, Giovanna, Derksen, Jeroen W.G., Quirós, J. Ramón, Severi, Gianluca, Cross, Amanda J., Riboli, Ellio, Tzoulaki, Ioanna, and Tsilidis, Konstantinos K.

Published
2022
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