257 results on '"Moiseev, K. D."'
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2. Band Diagram of the InAs1 – ySby/InAsSbP Heterojunction in the Composition Range y < 0.2
3. Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction
4. Optoelectronic properties of the Sb/III-Sb interface induced by laser photooxidation
5. Forming a Type-II Heterojunction in the InAsSb/InAsSbP Semiconductor Structure
6. Long-Wavelength LEDs in the Atmospheric Transparency Window of 4.6–5.3 μm
7. InAs(1 – y)Sby/InAsSbP Narrow-Gap Heterostructures (y = 0.09–0.16) Grown by Metalorganic Vapor Phase Epitaxy for the Spectral Range of 4–6 μm
8. Response to “Comment on ‘Restoration of the original depth distribution from the SIMS profile using the depth resolution function in framework of RMR model’” [J. Vac. Sci. Technol. B 41, 024003 (2023)]
9. The Influence of the Crystal Structure of the GaSb–InAs Matrix on the Formation of InSb Quantum Dots
10. Discovery of III–V Semiconductors: Physical Properties and Application
11. Rearrangement of Electroluminescence Spectra in Type-II n-InAs/n-InAsSbP Heterostructures
12. Restoration of the original depth distribution from experimental SIMS profile using the depth resolution function in framework of RMR model
13. On the delta-type doping of GaAs-based heterostructures with manganese compounds
14. InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates
15. Charge transfer features and ferromagnetic order in semiconductor heterostructures δ-doped with manganese
16. Features of an InAsSbP epilayer formation on an InAs support by metalorganic vapor phase epitaxy
17. Interface Lasers with Asymmetric Band Offset Confinement
18. Interface Related Radiative Recombination on a Type-II Broken-Gap Single GalnAsSb/InAs Heterojunction
19. Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth
20. Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy
21. Self-Assembled InSb/InAs Quantum Dots for the Mid-Infrared Spectral Range 3–4 μm
22. Semimetal-Insulator Transition in Two-Dimensional System at the Type II Broken-Gap InAs/GalnAsSb Single Heterointerface
23. High-temperature interfacial electroluminescence in type-II broken-gap heterostructures based on InSb quantum dashes in n-InAs matrix
24. On InAsSbP epitaxial layers with ultimate phosphorus content, lattice-matched with an InAs substrate
25. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix
26. Specific features of nanosize object formation in an InSb/InAs system by metal-organic vapor-phase epitaxy
27. Two-color luminescence from a single type-II InAsSbP/InAs heterostructure
28. Interfacial luminescence in an InAs/InAsSbP isotype type II heterojunction at room temperature
29. Features of obtaining diluted magnetic semiconductors in the system of narrow-gap GaInAsSb alloys
30. Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range
31. Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement
32. Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
33. Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate
34. Type II broken-gap GaSb1 − x Asx/InAs heterojunction (x < 0.15): Evolution of the band diagram for the ternary solid solution
35. Magneto-photoluminescence in a type-II broken-gap n-GaInAsSb/p-InAs heterojunction
36. Quantum insulator in a semimetal channel on a single type II broken-gap heterointerface in high magnetic fields
37. InSb/InAs quantum dots grown by liquid phase epitaxy
38. Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system
39. Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb
40. Energy spectrum and quantum magnetotransport in type-II heterojunctions
41. Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs
42. Temperature dependence of the optical and electrical properties of long-wavelength InAsSb-based LED heterostructures
43. Electroluminescence in a semimetal channel at a single type II broken-gap heterointerface
44. Interaction of charge carriers with the localized magnetic moments of manganese atoms in p-GaInAsSb/p-InAs:Mn heterostructures
45. Special features of spontaneous and coherent emission of IR lasers based on a single type-II broken-gap heterojunction
46. Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy
47. Ultimate InAsSbP solid solutions for 2.6–2.8-μm LEDs
48. Photodiodes for a 1.5–4.8 µm spectral range based on type-II GaSb/InGaAsSb heterostructures
49. Current-tunable lasers with a narrow emission line operating at 3.3 µm
50. Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties
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