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The spatial arrangement of adsorbates deposited onto a clean surface in vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors exhibit reversible, electrically-tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F4TCNQ molecules was achieved on a graphene FET at T = 4.5K. This capability enables precisely controlled impurity doping of graphene devices and also provides a new method for determining molecular energy level alignment based on the gate-dependence of molecular concentration. The gate-tunable molecular concentration can be explained by a dynamical molecular rearrangement process that reduces total electronic energy by maintaining Fermi level pinning in the device substrate. Molecular surface concentration in this case is fully determined by the device back-gate voltage, its geometric capacitance, and the energy difference between the graphene Dirac point and the molecular LUMO level.

The Wigner crystal1 has fascinated condensed matter physicists for nearly 90 years2–14. Signatures of two-dimensional (2D) Wigner crystals were first observed in 2D electron gases under high magnetic field2–4, and recently reported in transition metal dichalcogenide moire superlattices6–9. Direct observation of the 2D Wigner crystal lattice in real space, however, has remained an outstanding challenge. Conventional scanning tunnelling microscopy (STM) has sufficient spatial resolution but induces perturbations that can potentially alter this fragile state. Here we demonstrate real-space imaging of 2D Wigner crystals in WSe2/WS2 moire heterostructures using a specially designed non-invasive STM spectroscopy technique. This employs a graphene sensing layer held close to the WSe2/WS2 moire superlattice. Local STM tunnel current into the graphene layer is modulated by the underlying Wigner crystal electron lattice in the WSe2/WS2 heterostructure. Different Wigner crystal lattice configurations at fractional electron fillings of n = 1/3, 1/2 and 2/3, where n is the electron number per site, are directly visualized. The n = 1/3 and n = 2/3 Wigner crystals exhibit triangular and honeycomb lattices, respectively, to minimize nearest-neighbour occupations. The n = 1/2 state spontaneously breaks the original C3 symmetry and forms a stripe phase. Our study lays a solid foundation for understanding Wigner crystal states in WSe2/WS2 moire heterostructures and provides an approach that is generally applicable for imaging novel correlated electron lattices in other systems. So far, only indirect evidence of Wigner crystals has been reported, but a specially designed scanning tunnelling microscope is used here to directly image them in a moire heterostructure.

The ability to create a robust and well-defined artificial atomic charge in graphene and understand its carrier-dependent electronic properties represents an important goal toward the development of graphene-based quantum devices. Herein, we devise a new pathway toward the atomically precise embodiment of point charges into a graphene lattice by posterior (N) ion implantation into a back-gated graphene device. The N dopant behaves as an in-plane proton-like charge manifested by formation of the characteristic resonance state in the conduction band. Scanning tunneling spectroscopy measurements at varied charge carrier densities reveal a giant energetic renormalization of the resonance state up to 220 meV with respect to the Dirac point, accompanied by the observation of gate-tunable long-range screening effects close to individual N dopants. Joint density functional theory and tight-binding calculations with modified perturbation potential corroborate experimental findings and highlight the short-range character of N-induced perturbation.

While enormous progress has been achieved in synthesizing atomically precise graphene nanoribbons (GNRs), the preparation of GNRs with fully predetermined length and monomer sequence remains an unmet challenge. Here we report a fabrication method that provides access to structurally diverse and monodisperse “designer” GNRs through utilization of an iterative synthesis strategy, in which a single monomer is incorporated into an oligomer chain during each chemical cycle. Surface-assisted cyclodehydrogenation is subsequently employed to generate the final nanoribbons, and bond-resolved scanning tunneling microscopy is utilized to characterize them.

The design of a spin imbalance within the crystallographic unit cell of bottom-up engineered 1D graphene nanoribbons (GNRs) gives rise to nonzero magnetic moments within each cell. Here, we demonstrate the bottom-up assembly and spectroscopic characterization of a one-dimensional Kondo spin chain formed by a chevron-type GNR (cGNR) physisorbed on Au(111). Substitutional nitrogen core doping introduces a pair of low-lying occupied states per monomer within the semiconducting gap of cGNRs. Charging resulting from the interaction with the gold substrate quenches one electronic state for each monomer, leaving behind a 1D chain of radical cations commensurate with the unit cell of the ribbon. Scanning tunneling microscopy (STM) and spectroscopy (STS) reveal the signature of a Kondo resonance emerging from the interaction of

The low mass density and high mechanical strength of graphene make it an attractive candidate for suspended-membrane energy transducers. Typically, the membrane size dictates the operational frequency and bandwidth. However, in many cases it would be desirable to both lower the resonance frequency and increase the bandwidth, while maintaining overall membrane size. We employ focused ion beam milling or laser ablation to create kirigami-like modification of suspended pure-graphene membranes ranging in size from microns to millimeters. Kirigami engineering successfully reduces the resonant frequency, increases the displacement amplitude, and broadens the effective bandwidth of the transducer. Our results present a promising route to miniaturized wide-band energy transducers with enhanced operational parameter range and efficiency.

The on-surface synthesis of highly ordered, large-area covalent organic framework (COF) monolayers remains a major challenge in polymer chemistry. Herein, we investigate the polymerization of asymm...

The ability to tune the electronic properties of molecular arrays is an important step in the development of molecule-scale electronic devices. However, control over internal device charge distributions by tuning interactions between molecules has proved challenging. Here, we show that gate-tunable charge patterning can occur in one-dimensional molecular arrays on graphene field-effect transistors. One-dimensional molecular arrays are fabricated using an edge-templated self-assembly process that allows organic molecules (F4TCNQ) to be precisely positioned on graphene devices. The charge configurations of the molecular arrays can be reversibly switched between different collective charge states by tuning the graphene Fermi level via a back-gate electrode. Charge pinning at the ends of the molecular arrays allows the charge state of the entire array to be controlled by adding or removing an edge molecule and changing the total number of molecules in an array between odd and even integers. Charge patterns altered in this way propagate down the array in a cascade effect, allowing the array to function as a charge-based molecular shift register. An extended multi-site Anderson impurity model is used to quantitatively explain this behaviour. One-dimensional molecular arrays on graphene field-effect transistors can be reversibly switched between different periodic charge states by tuning the graphene Fermi level via a back-gate electrode and by manipulating individual molecules, allowing them to function as a nanoscale shift register.

The design and fabrication of robust metallic states in graphene nanoribbons (GNRs) is a significant challenge since lateral quantum confinement and many-electron interactions tend to induce electronic band gaps when graphene is patterned at nanometer length scales. Recent developments in bottom-up synthesis have enabled the design and characterization of atomically-precise GNRs, but strategies for realizing GNR metallicity have been elusive. Here we demonstrate a general technique for inducing metallicity in GNRs by inserting a symmetric superlattice of zero-energy modes into otherwise semiconducting GNRs. We verify the resulting metallicity using scanning tunneling spectroscopy as well as first-principles density-functional theory and tight binding calculations. Our results reveal that the metallic bandwidth in GNRs can be tuned over a wide range by controlling the overlap of zero-mode wavefunctions through intentional sublattice symmetry-breaking., Comment: The first three authors listed contributed equally

We introduce a graphene-based nanofluidic cell that facilitates in-situ imaging of liquid samples via transmission electron microscopy. The cell combines the benefits of graphene liquid cells – nam...

A key feature of two-dimensional materials is that the sign and concentration of their carriers can be externally controlled with techniques such as electrostatic gating. However, conventional electrostatic gating has limitations, including a maximum carrier density set by the dielectric breakdown, and ionic liquid gating and direct chemical doping also suffer from drawbacks. Here, we show that an electron-beam-induced doping technique can be used to reversibly write high-resolution doping patterns in hexagonal boron nitride-encapsulated graphene and molybdenum disulfide (MoS2) van der Waals heterostructures. The doped MoS2 device exhibits an order of magnitude decrease of subthreshold swing compared with the device before doping, whereas the doped graphene devices demonstrate a previously inaccessible regime of high carrier concentration and high mobility, even at room temperature. We also show that the approach can be used to write high-quality p–n junctions and nanoscale doping patterns, illustrating that the technique can create nanoscale circuitry in van der Waals heterostructures. An electron beam technique can be used to write high-resolution doping patterns in graphene and MoS2 van der Waals heterostructures, and could allow doped circuit designs to be created.

Strong electron correlation can induce Mott insulating behaviour and produce intriguing states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe2 via spatial- and momentum-resolved spectroscopy involving scanning tunnelling microscopy and angle-resolved photoemission. Our results indicate that electron correlation induces a robust Mott insulator state in single-layer 1T-TaSe2 that is accompanied by unusual orbital texture. Interlayer coupling weakens the insulating phase, as shown by reduction of the energy gap and quenching of the correlation-driven orbital texture in bilayer and trilayer 1T-TaSe2. This establishes single-layer 1T-TaSe2 as a useful platform for investigating strong correlation physics in two dimensions. The electrons that contribute to the Mott insulator state in single-layer 1T-TaSe2 are shown to also have a rich variation in their orbital occupation. As more layers are added, both the insulating state and orbital texture weaken.

The Wigner crystal

The photon-like behavior of electrons in graphene causes unusual confinement properties that depend strongly on the geometry and strength of the surrounding potential. We report bottom-up synthesis of atomically-precise one-dimensional (1D) arrays of point charges on graphene that allow exploration of a new type of supercritical confinement of graphene carriers. The arrays were synthesized by arranging F4TCNQ molecules into a 1D lattice on back-gated graphene, allowing precise tuning of both the molecular charge and the array periodicity. While dilute arrays of ionized F4TCNQ molecules are seen to behave like isolated subcritical charges, dense arrays show emergent supercriticality. In contrast to compact supercritical clusters, these extended arrays display both supercritical and subcritical characteristics and belong to a new physical regime termed “frustrated supercritical collapse”. Here carriers in the far-field are attracted by a supercritical charge distribution, but their fall to the center is frustrated by subcritical potentials in the near-field, similar to trapping of light by a dense cluster of stars in general relativity., Placement of charge centres with atomic precision on graphene allows exploration of new types of confinement of charge carriers. Here, the authors fabricate atomically precise arrays of point charges on graphene and observe the onset of a frustrated supercritical regime.

The rational bottom-up synthesis of atomically defined graphene nanoribbon (GNR) heterojunctions represents an enabling technology for the design of nanoscale electronic devices. Synthetic strategies used thus far have relied on the random copolymerization of two electronically distinct molecular precursors to yield GNR heterojunctions. Here we report the fabrication and electronic characterization of atomically precise GNR heterojunctions prepared through late-stage functionalization of chevron GNRs obtained from a single precursor. Post-growth excitation of fully cyclized GNRs induces cleavage of sacrificial carbonyl groups, resulting in atomically well-defined heterojunctions within a single GNR. The GNR heterojunction structure was characterized using bond-resolved scanning tunnelling microscopy, which enables chemical bond imaging at T = 4.5 K. Scanning tunnelling spectroscopy reveals that band alignment across the heterojunction interface yields a type II heterojunction, in agreement with first-principles calculations. GNR heterojunction band realignment proceeds over a distance less than 1 nm, leading to extremely large effective fields.

Surface plasmons (SPs) and phonon polaritons (PhPs) are two distinctive quasiparticles resulting from the strong coupling of photons with electrons and optical phonons, respectively. In this Letter, we investigate the interactions between one-dimensional (1D) plasmons in silver nanowires with two-dimensional (2D) surface phonon polaritons of the silicon carbide (SiC) substrate. Using near-field infrared spectroscopy of the silver nanowire-SiC heterostructure at wavelengths close to the phonon resonance of SiC, we observe that the 1D plasmon dispersion is strongly modified by the 2D phonon polaritons in SiC. In particular, we observe for the first time well-defined 1D plasmon oscillations with the plasmon wavelengths longer than the free-space photon wavelengths due to the 1D plasmon-2D phonon polariton coupling. Our work demonstrates that unusual polariton behavior can emerge from interactions between polariton excitons of different dimensionality, which can enable new ways to engineer plasmons in hybrid structures.

Layer-stacking domain walls in bilayer graphene are emerging as a fascinating one-dimensional system that features stacking solitons structurally and quantum valley Hall boundary states electronically. The interactions between electrons in the 2D graphene domains and the one-dimensional domain-wall solitons can lead to further new quantum phenomena. Domain-wall solitons of varied local structures exist along different crystallographic orientations, which can exhibit distinct electrical, mechanical and optical properties. Here we report soliton-dependent 2D graphene plasmon reflection at different 1D domain-wall solitons in bilayer graphene using near-field infrared nanoscopy. We observe various domain-wall structures in mechanically exfoliated graphene bilayers, including network-forming triangular lattices, individual straight or bent lines, and even closed circles. The near-field infrared contrast of domain-wall solitons arises from plasmon reflection at domain walls, and exhibits markedly different behaviours at the tensile- and shear-type domain-wall solitons. In addition, the plasmon reflection at domain walls exhibits a peculiar dependence on electrostatic gating. Our study demonstrates the unusual and tunable coupling between 2D graphene plasmons and domain-wall solitons.

A scanning tunnelling microscopy study demonstrates that one-dimensional charge density waves can form at twin boundaries in a monolayer transition metal dichalcogenide.

A Cu-catalyzed benzannulation reaction transforms ortho(arylene ethynylene) oligomers into ortho-arylenes. This approach circumvents iterative Suzuki cross-coupling reactions previously used to assemble hindered ortho-arylene backbones. These derivatives form helical folded structures in the solid-state and in solution, as demonstrated by X-ray crystallography and solution-state NMR analysis. DFT calculations of misfolded conformations are correlated with variable-temperature 1H and EXSY NMR to reveal that folding is cooperative and more favorable in halide-substituted naphthalenes. Helical ortho-arylene foldamers with specific aromatic sequences organize functional π-electron systems into arrangements ideal for ambipolar charge transport and show preliminary promise for the surface-mediated synthesis of structurally defined graphene nanoribbons.

Defects play a key role in determining the properties and technological applications of nanoscale materials and, because they tend to be highly localized, characterizing them at the single-defect level is of particular importance. Scanning tunnelling microscopy has long been used to image the electronic structure of individual point defects in conductors, semiconductors and ultrathin films, but such single-defect electronic characterization remains an elusive goal for intrinsic bulk insulators. Here, we show that individual native defects in an intrinsic bulk hexagonal boron nitride insulator can be characterized and manipulated using a scanning tunnelling microscope. This would typically be impossible due to the lack of a conducting drain path for electrical current. We overcome this problem by using a graphene/boron nitride heterostructure, which exploits the atomically thin nature of graphene to allow the visualization of defect phenomena in the underlying bulk boron nitride. We observe three different defect structures that we attribute to defects within the bulk insulating boron nitride. Using scanning tunnelling spectroscopy we obtain charge and energy-level information for these boron nitride defect structures. We also show that it is possible to manipulate the defects through voltage pulses applied to the scanning tunnelling microscope tip.

We present the electronic characterization of single-layer 1H-TaSe

The bulk properties of polycrystalline materials are directly influenced by the atomic structure at the grain boundaries that join neighboring crystallites. In this work, we show that graphene grain boundaries are comprised of structural building blocks of conserved atomic bonding sequences using aberration corrected high-resolution transmission electron microscopy. These sequences appear as stretches of identically arranged periodic or aperiodic regions of dislocations. Atomic scale strain and lattice rotation of these interfaces is derived by mapping the exact positions of every carbon atom at the boundary with ultrahigh precision. Strain fields are organized into local tensile and compressive dipoles in both periodic and aperiodic dislocation regions. Using molecular dynamics tension simulations, we find that experimental grain boundary structures maintain strengths that are comparable to idealized periodic boundaries despite the presence of local aperiodic dislocation sequences.

Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit novel electrical and optical properties and are emerging as a new platform for exploring 2D semiconductor physics. Reduced screening in 2D results in dramatically enhanced electron-electron interactions, which have been predicted to generate giant bandgap renormalization and excitonic effects. Currently, however, there is little direct experimental confirmation of such many-body effects in these materials. Here we present an experimental observation of extraordinarily large exciton binding energy in a 2D semiconducting TMD. We accomplished this by determining the single-particle electronic bandgap of single-layer MoSe2 via scanning tunneling spectroscopy (STS), as well as the two-particle exciton transition energy via photoluminescence spectroscopy (PL). These quantities yield an exciton binding energy of 0.55 eV for monolayer MoSe2, a value that is orders of magnitude larger than what is seen in conventional 3D semiconductors. This finding is corroborated by our ab initio GW and Bethe Salpeter equation calculations, which include electron correlation effects. The renormalized bandgap and large exciton binding observed here will have a profound impact on electronic and optoelectronic device technologies based on single-layer semiconducting TMDs.

Author(s): Ghoshal, D; Wang, T; Tsai, HZ; Chang, SW; Crommie, M; Koratkar, N; Shi, SF | Abstract: Ruddleson–Popper (RP) perovskites have emerged as a class of material inheriting the superior optoelectronic properties of two materials: perovskites and 2D materials. The large exciton binding energy and natural quantum well structure not only make these materials ideal platforms to study light–matter interactions but also render them suitable for fabrication of various functional optoelectronic devices. Nanoscale structuring and morphology control have led to semiconductors with enhanced functionalities. Nanowires of semiconducting materials are extensively used for important applications like lasing and sensing. However, catalyst and template-free scalable growth of nanowires of 2D perovskites has remained elusive. In this paper, a facile approach for morphology-controlled growth of nanowires of 2D perovskite, (BA)2PbI4, is demonstrated. Additionally, it is shown that the photoluminescence (PL) from the nanowires is highly polarized with a polarization ratio as large as ≈0.73, which is one of the largest reported for perovskites. It is further shown that the photocurrent from the hybrid nanowire/graphene device is also sensitive to the polarization of the incident light with the photocurrent anisotropy ratio of ≈3.62 (much larger than the previously reported value of 2.68 for perovskites), thus demonstrating the potential of these nanowires as highly efficient photodetectors for polarized light.

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1 μA at V d = −1 V) and high I on /I off ~ 105 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons., Graphene nanoribbons show promise for high-performance field-effect transistors, however they often suffer from short lengths and wide band gaps. Here, the authors use a bottom-up synthesis approach to fabricate 9- and 13-atom wide ribbons, enabling short-channel transistors with 105 on-off current ratio.

A Cu-catalyzed benzannulation reaction transforms ortho(arylene ethynylene) oligomers into ortho-arylenes., A Cu-catalyzed benzannulation reaction transforms ortho(arylene ethynylene) oligomers into ortho-arylenes. This approach circumvents iterative Suzuki cross-coupling reactions previously used to assemble hindered ortho-arylene backbones. These derivatives form helical folded structures in the solid-state and in solution, as demonstrated by X-ray crystallography and solution-state NMR analysis. DFT calculations of misfolded conformations are correlated with variable-temperature 1H and EXSY NMR to reveal that folding is cooperative and more favorable in halide-substituted naphthalenes. Helical ortho-arylene foldamers with specific aromatic sequences organize functional π-electron systems into arrangements ideal for ambipolar charge transport and show preliminary promise for the surface-mediated synthesis of structurally defined graphene nanoribbons.

Liquid Nanocrystals In high-resolution transmission electron microscopy, grid materials are used to support solid samples while providing a means for preventing a build-up of static charge. Liquids are difficult to study at the same atomic resolution and require encapsulation to prevent excess sample movement, sample damage, or evaporation. Materials that have been used for liquid cells, like silicon nitride or silicon oxide, need thick layers and have poor electron transmittance at the thicknesses required because they contain high atomic number elements. Yuk et al. (p. 61 ; see the Perspective by Colliex ) show that liquids can be encapsulated in graphene sheets, and through this technique, they studied the formation of platinum nanocrystals with atomic resolution. The crystals could be tracked as they selectively coalesced, modified their shape, and formed surface facets.

Edge effects matter in graphene, particularly in nanoribbons. A study using scanning tunnelling microscopy and spectroscopy reveals how chirality at the atomically well-defined edges of a graphene nanoribbon affects its electronic structure.

Inelastic light scattering spectroscopy has, since its first discovery, been an indispensable tool in physical science for probing elementary excitations, such as phonons, magnons and plasmons in both bulk and nanoscale materials. In the quantum mechanical picture of inelastic light scattering, incident photons first excite a set of intermediate electronic states, which then generate crystal elementary excitations and radiate energy-shifted photons. The intermediate electronic excitations therefore have a crucial role as quantum pathways in inelastic light scattering, and this is exemplified by resonant Raman scattering and Raman interference. The ability to control these excitation pathways can open up new opportunities to probe, manipulate and utilize inelastic light scattering. Here we achieve excitation pathway control in graphene with electrostatic doping. Our study reveals quantum interference between different Raman pathways in graphene: when some of the pathways are blocked, the one-phonon Raman intensity does not diminish, as commonly expected, but increases dramatically. This discovery sheds new light on the understanding of resonance Raman scattering in graphene. In addition, we demonstrate hot-electron luminescence in graphene as the Fermi energy approaches half the laser excitation energy. This hot luminescence, which is another form of inelastic light scattering, results from excited-state relaxation channels that become available only in heavily doped graphene.

The synthesis of a single-layer covalent organic framework (COF) with spatially modulated internal potentials provides new opportunities for manipulating the electronic structure of molecularly defined materials. Here, the fabrication and electronic characterization of COF-420: a single-layer porphyrin-based square-lattice COF containing a periodic array of oriented, type II electronic heterojunctions is reported. In contrast to previous donor-acceptor COFs, COF-420 is constructed from building blocks that yield identical cores upon reticulation, but that are bridged by electrically asymmetric linkers supporting oriented electronic dipoles. Scanning tunneling spectroscopy reveals staggered gap (type II) band alignment between adjacent molecular cores in COF-420, in agreement with first-principles calculations. Hirshfeld charge analysis indicates that dipole fields from oriented imine linkages within COF-420 are the main cause of the staggered electronic structure in this square grid of atomically-precise heterojunctions.

Infrared spectroscopy reveals unusual tunable electronic structure and optical behaviour in electrically gated bilayer graphene. In a dual-gate bilayer graphene device, we were able to control the carrier doping and a semiconductor bandgap independently by using different combinations of the top and bottom gate voltages. The field-induced bandgap can be probed directly through the emerging interband transitions in infrared absorption spectra. A tunable bandgap up to 250 meV has been observed in our dual-gate bilayer graphene devices. This unique tunable bandgap can lead to many new physical phenomena. One example is an unusual phonon–exciton Fano resonance when the electronic bandgap is tuned to match the phonon vibration energy. Here (continuous) electron–hole transitions and (discrete) phonon vibrations form a coupled system described by the Fano resonance, and the infrared absorption spectra exhibit characteristic quantum interference between the phonon and exciton transitions. Remarkably, this coupled phonon–exciton Fano resonance can be continuously tuned through electrical gating in bilayer graphene, and its behaviour is described quantitatively by theory.

Graphene exhibits unique electrical properties on account of its reduced dimensionality and neutrino-like "massless Dirac fermion" quasiparticle spectrum. When contacted with two superconducting electrodes, graphene can support Cooper pair transport, resulting in the well-known Josephson effect. The current-phase relation in a ballistic graphene Josephson junction is unique, and could provide a signature for the detection of ballistic Dirac fermions. This relation can be measured experimentally either directly via incorporation of graphene in an RF superconducting quantum interference device (SQUID) or indirectly via a dc-SQUID. We calculate the expected flux modulation of the switching current in the case of the dc-SQUID and compare the results to a previous experiment. Further experiments investigating the current-phase relation in graphene are promising for the observation of ballistic Dirac fermions.

Bipolar molecules incorporating donor and acceptor components within a single molecule create exciting device opportunities due to their possible use as nanoscale p-n heterojunctions. Here we report a direct characterization of the internal electronic structure of a single bipolar molecular heterojunction, including subnanometer features of the intramolecular donor-acceptor interface. Angstrom-resolved scanning tunneling spectroscopy was used to map the energy levels and spatial extent of molecular orbitals across the surface of an individual bipolar molecule, bithiophene naphthalene diimide (BND). We find that individual BND molecules exhibit type II heterojunction behavior with orbital energy shifts occurring over subnanometer intramolecular interface distances. Comparison of this behavior with first-principles theoretical modeling provides new insights into the optimization of these molecular systems.

Although the physics of materials at surfaces and edges has been extensively studied, the movement of individual atoms at an isolated edge has not been directly observed in real time. With a transmission electron aberration–corrected microscope capable of simultaneous atomic spatial resolution and 1-second temporal resolution, we produced movies of the dynamics of carbon atoms at the edge of a hole in a suspended, single atomic layer of graphene. The rearrangement of bonds and beam-induced ejection of carbon atoms are recorded as the hole grows. We investigated the mechanism of edge reconstruction and demonstrated the stability of the “zigzag” edge configuration. This study of an ideal low-dimensional interface, a hole in graphene, exhibits the complex behavior of atoms at a boundary.

Scanning tunnelling spectra of a graphene field-effect transistor reveal an unexpected tenfold increase in conductance as a result of phonon-mediated inelastic tunnelling. The honeycomb lattice of graphene is a unique two-dimensional system where the quantum mechanics of electrons is equivalent to that of relativistic Dirac fermions1,2. Novel nanometre-scale behaviour in this material, including electronic scattering3,4, spin-based phenomena5 and collective excitations6, is predicted to be sensitive to charge-carrier density. To probe local, carrier-density-dependent properties in graphene, we have carried out atomically resolved scanning tunnelling spectroscopy measurements on mechanically cleaved graphene flake devices equipped with tunable back-gate electrodes. We observe an unexpected gap-like feature in the graphene tunnelling spectrum that remains pinned to the Fermi level (EF) regardless of graphene electron density. This gap is found to arise from a suppression of electronic tunnelling to graphene states near EF and a simultaneous giant enhancement of electronic tunnelling at higher energies due to a phonon-mediated inelastic channel. Phonons thus act as a ‘floodgate’ that controls the flow of tunnelling electrons in graphene. This work reveals important new tunnelling processes in gate-tunable graphitic layers.