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Your search keyword '"Lloyd C. Litt"' showing total 3 results
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3 results on '"Lloyd C. Litt"'

1. Process impact of mask grid variation

Author

Paul van der Vleuten, Arjan Verhappen, Martin Chaplin, Lloyd C. Litt, Jan Pieter Kuijten, Stephan van der Goor, Will Conley, and Bryan S. Kasprowicz

Subjects
business.industry, Computer science, Acoustics, Rounding, media_common.quotation_subject, Fidelity, Ranging, Condensed Matter Physics, Grid, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Numerical aperture, Optics, Optical proximity correction, Electrical and Electronic Engineering, business, media_common
Abstract

This paper will focus on the process impact of the intentional change in the mask writing grid. Grids ranging from 1nm to 4nm (defined at mask level) were used to investigate the effect on test structures in critical locations. The impact on optical proximity correction (OPC) to control line end pull back, corner rounding and general image fidelity will be investigated on >1 numerical aperture (NA) immersion imaging system.

Published
2007
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2. Polarized illuminator impact on line edge roughness

Author

Stephan van der Goor, Martin Chaplin, Arjan Verhappen, Lloyd C. Litt, Will Conley, Paul van der Vleuten, Jan Pieter Kuijten, and Bryan S. Kasprowicz

Subjects
Materials science, business.industry, Industry standard, Testing equipment, Surface finish, Condensed Matter Physics, Line edge roughness, Polarization (waves), Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Optics, Phase-shift mask, Electrical and Electronic Engineering, business, Lithography
Abstract

A study has been completed to investigate the imaging performance with the industry standard 6% attenuated phase shift mask. Several test structures were used to investigate the effects on line edge roughness (LER) based on the polarization state of the illuminator. The use of a high NA (>1NA) immersion exposure system was employed to study the imaging characteristics.

Published
2007
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3. Through pitch contact hole imaging for the 65nm node

Author

Jan Pieter Kuijten, Scott Warwick, Will Conley, Lloyd C. Litt, Arjan Verhappen, Robert John Socha, and Martin Chaplin

Subjects
Computer science, Node (networking), Miniaturization, Electronic engineering, Process (computing), Nanotechnology, Electrical and Electronic Engineering, Condensed Matter Physics, Contact hole, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Dual (category theory)
Abstract

This paper presents the details on the use of dual illumination conditions through double exposure to support the imaging of contact holes through pitch for 65nm node applications. Data generated from a 0.85 NA ArF ASML TWINSCAN(TM) system will be presented. The authors will also present simulation and process data to understand the limitations and improvements in imaging capability.

Published
2006
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