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1. The reliability of (AlxGa1-x)0.5In0.5P visible light-emitting diodes.

Author

Lacey, J. D. G., Morgan, D. V., Aliyu, Y. H., and Thomas, H.

Subjects
*RELIABILITY in engineering, *LIGHT emitting diodes, *HETEROSTRUCTURES, *ENERGY bands, *BAND gaps
Abstract

The reliability of AlGaInP double-heterostructure (DH) light-emitting diodes (LEDs) operating typically at 600 nm has been studied. To investigate degradation, accelerated aging at ambient temperatures of 50, 75 and 125°C has been carried out for over 5000 h. The activation energy of homogeneous degradation was determined to be 0.8 eV and an extrapolated half-life in excess of 106 h was estimated at an ambient temperature of 20°C. Copyright © 2000 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

Published
2000
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