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Accurate performance-degradation monitoring of nanometer MOSFET digital circuits is one of the most critical issues in adaptive design techniques for overcoming the performance degradation due to aging phenomena such as negative bias temperature instability (NBTI) and hot carrier injection (HCI). Therefore, this paper proposes new on-chip aging sensor circuits which deploy a threshold voltage detector for monitoring the performance degradation of an aged MOSFET. The new aging sensor circuits measure the threshold voltage difference between a NBTI/HCI stressed MOSFET device and a NBTI/HCI unstressed MOSFET device using an inverter chain and a phase comparator and digitalize the phase difference induced by the threshold voltage difference. The proposed sensor circuits achieve a direct correlation between the threshold voltage degradation and the phase difference (a phase difference resolution of 1 ns per 0.01 V threshold voltage shift). Also, the circuits are almost independent of temperature variation due to symmetrical circuit structures. A 45 nm CMOS technology and predictive NBTI/HCI models have been used to implement and evaluate the proposed circuits. The implemented layout size is 18.58 x 7.97 μm2; the post-layout power consumption is 18.57 μW during NBTI/HCI stress mode and 30.86 μW during NBTI/HCI measurement mode on average.

This article describes a novel technique for analysing the effects of supply voltage noise on circuit delay for VLSI circuits. Scattering parameters are used to model the supply voltage variation in the frequency domain and to reduce the original power grid and simulation time. The interconnections of the power grid are modelled by RLC passive elements, constant voltage and time-varying current sources. A fast and accurate MOSFET modelling method for a static timing analyser is proposed based on the power grid analysis. A MOSFET logic is modelled in three different regions during transition, and the maximum delay is formulated as a constrained non-linear optimisation problem by considering the power supply noise (inclusive of the IR-drop and the Ldi/dt drop). The proposed technique has been applied to ISCAS85 benchmark circuits redesigned in 45 nm technology. The results are compared to Hspice; they show that the error is within 5% of the Hspice simulation results.

A novel power gating (PG) structure using only low-threshold-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed to extend the PG to an ultralow-voltage region ( ~ 0.3 V). The proposed structure deploys series-connected low-V th footers with two virtual ground ports and selectively chooses the logic cells for connecting them to each virtual ground port according to the delay criticality. Furthermore, additional circuitry is designed to reduce not only the subthreshold leakage current but also the gate-tunneling leakage and to reduce the wake-up time and rush current compared to the conventional PG. The total PG switch size of the proposed PG structure including the additional circuits is less than the conventional one. The simulation results are compared to those of other well-known circuit schemes and show that, in the ultralow-voltage region, the other high-V th-based PG schemes cannot be used due to the impractical delay increase and long wake-up time, whereas the proposed PG structure keeps the balance among the critical PG issues. The proposed PG is evaluated using inverter chains and ISCAS85 benchmark circuits at 0.6-V supply voltage, which are designed using 45-nm complementary metal-oxide-semiconductor predictive technology model.

This paper proposes a novel design method to minimize the leakage power during standby mode using a novel adaptive supply voltage and body-bias voltage generating technique for nanoscale VLSI systems. The process, voltage, and temperature (PVT) variations are monitored and controlled independently by their own dedicated systems. The minimum level of V DD and the optimum body-bias voltage are generated for different temperature and process conditions adaptively using a lookup table method based on the PVT monitoring and controlling systems. The power supply variations is accurately compensated adaptively through the monitoring circuits based on the propagation delay change of the inverter chains. The subthreshold current as well as gate-tunneling and band-to-band-tunneling currents are monitored and minimized adaptively by the optimally generated body-bias voltage. The proposed design method reduces the leakage power at least by 500 times for ISCAS'85 benchmark circuits designed using 32-nm CMOS technology comparing to the case where the method is not applied.

This paper presents a novel statistical characterization for accurate timing and a new probabilistic-based analysis for estimating the leakage power in partially depleted silicon-on-insulator (PD-SOI) circuits in 100-nm BSIMSOI3.2 technology. This paper shows that the accuracy of modeling the leakage current in PD-SOI complementary metal-oxide-semiconductor (CMOS) circuits is improved by considering the interactions between the subthreshold leakage and the gate tunneling leakage, the stacking effect, the history effect, and the fan-out effect, along with a new input-independent method for estimating the leakage power based on a probabilistic approach. The proposed timing and leakage power estimate algorithms are implemented in MATLAB, HSPICE, and C. The proposed methodology is applied to ISCAS85 benchmarks, and the results show that the error is within 5%, compared with random simulation results.

This paper presents a novel modeling analysis of jitter as applicable to testing of serial data channels. Jitter is analyzed by considering separate and combined components. The primary goal is the generation of a signal containing a known amount of each jitter component. This signal can then be used for testing high speed serial data channels. Initially, jitter components are analyzed and modeled individually. Next, sequences for combining them are modeled, simulated and evaluated. Model simulation using Matlab is utilized to show the unique features of the components when they are combined into different injection sequences for producing the total jitter. Sequence dependency is investigated in depth and the validity of superposition of jitter components for typical values is confirmed. A good agreement between theory and simulation is verified; these results allow test engineers to have an insight into the interactions among jitter components in serial data channels.

In this study, condensation heat transfer coefficients (HTCs) were measured on a horizontal plain tube, low fin tube, and Turbo-C tube at the saturated vapor temperature of 39 °C for R22, R407C, and R410A with the wall subcooling of 3–8 °C. R407C, a non-azeotropic refrigerant mixture, exhibited a quite different condensation phenomenon from those of R22 and R410A and its condensation HTCs were up to 50% lower than those of R22. For R407C, as the wall subcooling increased, condensation HTCs decreased on a plain tube while they increased on both low fin and turbo-C tubes. This was due to the lessening effect of the vapor diffusion film with a rapid increase in condensation rate on enhanced tubes. On the other hand, condensation HTCs of R410A, almost an azeotrope, were similar to those of R22. For all refrigerants tested, condensation HTCs of turbo-C tube were the highest among the tubes tested showing a 3–8 times increase as compared to those of a plain tube.