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Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing thickness as the 2D limit is approached. Here, we present the electrical conductivity of exfoliated single crystals of the TMH, cluster magnet, Nb

WTe

A flexible, nondestructive, and cost-effective replication technique for nanostructures is presented. The advantages of the process are: 1) it allows for tailoring structural parameters of the replica (e.g., line width) nearly independent of the structural geometry of the master; 2) it allows for replication of high-aspect-ratio structures also in polymer materials from solution (especially noncurable polymers) such as polystyrene and polymethylmethacrylate; 3) it includes an easy separation process, thus preserving the master for repeated use. Linear grating replicas with line widths ranging from 88 to 300 nm are obtained using a single nanostructured master. Nanofibers and complex nanopatterned replicas are achievable. The presented technique and its flexibility show that atomic layer deposition is a unique tool for the preparation of high-efficiency polarizer diffractive optics, photonics, electronics, and catalysts.

A detailed knowledge of the electronic properties of individual dislocations is necessary for next generation nanodevices. Dislocations are fundamental crystal defects controlling the growth of different nanostructures (nanowires) or appear during device processing. We present a method to record electric properties of single dislocations in thin silicon layers. Results of measurements on single screw dislocations are shown for the first time. Assuming a cross-section area of the dislocation core of about 1 nm2, the current density through a single dislocation is J = 3.8 × 1012 A/cm2 corresponding to a resistivity of ρ ≅ 1 × 10−8 Ω cm. This is about eight orders of magnitude lower than the surrounding silicon matrix. The reason of the supermetallic behavior is the high strain in the cores of the dissociated dislocations modifying the local band structure resulting in high conductive carrier channels along defect cores.

WTe$_2$ is one of a series of recently discovered high mobility semimetals, some of whose properties are characteristic of topological Dirac or Weyl metals. One of its most interesting properties is the unsaturated giant magnetoresistance that it exhibits at low temperatures. An important question is the degree to which this property can be ascribed to a conventional semi-metallic model in which a highly compensated, high mobility metal exhibits large magnetoresistance. Here we show that the longitudinal thermopower (Seebeck effect) of semi-metallic WTe$_2$ exfoliated flakes exhibits periodic sign changes about zero with increasing magnetic field that indicates distinct electron and hole Landau levels and nearly fully compensated electron and hole carrier densities. However, inconsistent with a conventional semi-metallic picture, we find a rapid enhancement of the Nernst effect at low temperatures that is nonlinear in magnetic field, which is consistent with Weyl points in proximity to the Fermi energy. Hence, we demonstrate the role played by the Weyl character of WTe$_2$ in its transport properties., 16 pages, 3 figures