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Spin-orbit effects in non-magnetic semiconductors allow for the manipulation of electronic spins in the absence of an applied magnetic field. Here, the authors exploit a persistent spin helix state in single quantum wells to enhance the coherence length of electronic drift transport.

We study the dynamics of a localized spin-1/2 driven by a time-periodic magnetic field that undergoes a topological transition. Despite the strongly non-adiabatic effects dominating the spin dynamics, we find that the field’s topology appears clearly imprinted in the Floquet spin states through an effective Berry phase emerging in the quasienergy. This has remarkable consequences on the spin resonance condition suggesting a whole new class of experiments to spot topological transitions in the dynamics of spins and other two-level systems, from nuclear magnetic resonance to strongly-driven superconducting qubits.

We have investigated comparative experiments for spin injection into semiconductor in an ordered L10-FePt/MgO/n-GaAs hybrid structure using electrical and optical detection methods. Spatial-resolved Kerr rotation microscope image clearly demonstrates accumulation of perpendicularly oriented spins in an n-GaAs channel at zero magnetic field. On the other hand, electrical three-terminal Hanle measurement shows shorter spin lifetime than that of the optical measurement. It suggests that the spin lifetime obtained from three-terminal Hanle method originates from spins at the MgO/GaAs interface but not in the bulk GaAs channel. [ABSTRACT FROM AUTHOR]