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14. Performance and spectral response of Pb[sub 1-x]Sn[sub x]Te(In) far-infrared photodetectors.

Author

Khokhlov, D. R., Ivanchik, I. I., Raines, S. N., Watson, D. M., and Pipher, J. L.

Subjects
*OPTICAL detectors, *INFRARED detectors
Abstract

We have compared directly the performance of a Pb[sub 1-x]Sn[sub x]Te(In) photodetector with that of two other state-of-the-art far-infrared detectors: a Si(Sb) blocked impurity band (BIB) detector and a Ge(Ga) photoconductor in an integrating cavity. The Pb[sub 1-x]Sn[sub x]Te(In) photodetector has current responsivity S[sub I] several orders of magnitude higher than the Si(Sb) BIB at wavelength λ=14.5 μm. Persistent photoresponse with S[sub I]∼10[sup 3] A/W at 40 mV bias and 1 s integration time at the wavelengths λ=90 and 116 μm has also been observed in the Pb[sub 1-x]Sn[sub x]Te(In) photodetector. This is larger by a factor of ∼100 than the responsivity of the Ge(Ga) photoconductor in the same conditions. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2000
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