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The catalyst surface was processed in the high-voltage electrical discharge device in oxygen environment. Continuous active oxide centers formed on the surface and complete filling of the surface with oxygen occur, and its thermo-physical properties, thermo-luminescence curves, scanning electron microscope and ESR spectrometers were studied. It was determined that the activity of the catalyst at values of the absorbed dose D ≤ 2 1 kGy is many times higher than that of conventional catalysts. Thus, due to the sorption volume of the surface, the volume of the product formed in the liquid phase increases by 1.6 times. [ABSTRACT FROM AUTHOR]

By X-ray diffraction method the structure of chalcogenide glass-like semiconductors As2Se3, As40Se30S30, As40Se30Te30, As-Se-S and As-Se-Te has been investigated. Data analysis obtained from the first sharp diffraction peak shows that the degree of disorder for glasses of nonstoichiometric composition is higher than for stoichiometric one. It is also shown that tellurium containing samples are more disorder. [ABSTRACT FROM AUTHOR]