Search

Tetrahedral amorphous carbon (ta-C) film was deposited using the filtered pulsed cathodic arc deposition method. The ta-C structures deposited on high velocity oxygen fuel thermally sprayed steel beam substrates were investigated for piezoresistive properties under direct contact pressing. A load of up to 1.4 GPa was applied with point contact, with no detrimental influence on the material. The linear response for the strain applied homogeneously on the whole film surface and on the local portion of the film surface under a cylindrical contact was observed. A high gauge factor of the measured system of 305 was measured, showing the potential of the material as a good candidate for sensing applications on direct contact measurement devices.

The growth of self‐catalyzed GaAs nanowires (NWs) and monolithic light‐emitting diode (LED) directly on flexible plastic substrates is reported. Dense GaAs NW forest is attained in self‐catalyzed mode using metalorganic vapor phase epitaxy. The NWs are shown to be crystalline with a zinc‐blende phase. The optical properties of the GaAs NWs are found to be promising in both photoluminescence emission and light‐trapping based on reflectance and transmittance measurements. The LED is fabricated from p‐type NWs by depositing Au as Ohmic contact and TiO2/ITO as an electron‐selective contact. The demonstrated NW growth and LED fabrication represent a significant step toward low‐cost, industrially feasible flexible III–V NW optoelectronic applications, as plastic is inexpensive, and the fabrication steps are compatible with roll‐to‐roll processing.

Abstract Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials – a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 104 Sm−1) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.

Abstract Atomic/molecular layer deposition (ALD/MLD) offers unique possibilities in the fabrication of inorganic-organic thin films with novel functionalities. Especially, incorporating nucleobases in the thin-film structures could open new avenues in the development of bio-electronic and photonic devices. Here we report an intense blue and widely excitation-dependent fluorescence in the visible region for ALD/MLD fabricated sodium-uracil thin films, where the crystalline network is formed from hydrogen-bonded uracil molecules linked via Na atoms. The excitation-dependent fluorescence is caused by the red-edge excitation shift (REES) effect taking place in the red-edge of the absorption spectrum, where the spectral relaxation occurs in continuous manner as demonstrated by the time-resolved measurements.

Platinum and nitrogen co-doped titania films of different surface morphologies obtained via a sol-gel process have been tested for tetracycline hydrochloride photocatalytic decomposition under simulated solar light. Titania crystallization to anatase is shown by XRD for all films. A shift of the bandgap edge toward the visible region in absorption spectra and, consequently, a narrowing of the bandgap is observed for some films doped with nitrogen and/or exposed to UV pretreatment. The surface peculiarities of the samples are presented by an SEM and TEM investigation. The surface saturation by Pt and N with a homogeneous distribution of Pt ions on the surface as well as bulk as established by XPS and EDS data can be achieved with a certain synthesis procedure. The influence of the platinum content and of the pretreatment procedure on the state and atomic surface concentration of incorporated nitrogen and platinum is studied by XPS analysis: substitutional and interstitial nitrogen, non-metal containing fragments, Pt0, Pt2+ and Pt4+ ions. The photocatalytic activity of the films is ruled by the presence of Pt2+ ions and N rather than Pt0. The formation of the polycrystalline titania structure and Pt0 nanoparticles (NPs) is confirmed by TEM and electron diffraction images. The mechanism of primary photocatalytic processes is proposed.

Emergent applications in wearable electronics require inexpensive sensors suited to scalable manufacturing. This work demonstrates a large-area thermal sensor based on distributed thermocouple architecture and ink-based multilayer graphene film. The proposed device combines the exceptional mechanical properties of multilayer graphene nanocomposite with the reliability and passive sensing performance enabled by thermoelectrics. The Seebeck coefficient of the spray-deposited films revealed an inverse thickness dependence with the largest value of 44.7 μV K−1 at 78 nm, which makes thinner films preferable for sensor applications. Device performance was demonstrated by touch sensing and thermal distribution mapping-based shape detection. Sensor output voltage in the latter application was on the order of 300 μV with a signal-to-noise ratio (SNR) of 35, thus enabling accurate detection of objects of different shapes and sizes. The results imply that films based on multilayer graphene ink are highly suitable to thermoelectric sensing applications, while the ink phase enables facile integration into existing fabrication processes.

In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga+ ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90–210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16:1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication. [ABSTRACT FROM AUTHOR]

The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%–100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm−1, above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m2 K GW−1, and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates. [ABSTRACT FROM AUTHOR]

We report on the thermoelectric properties of large-area high-aspect-ratio nanostructures. We fabricate the structures by atomic layer deposition of conformal ZnO thin films on track-etched polycarbonate substrate. The resulting structure consists of ZnO tubules which continue through the full thickness of the substrate. The electrical and thermal properties of the structures are studied both in-plane and out-of-plane. They exhibit very low out-of-plane thermal conductivity down to 0.15 W m−1 K−1 while the in-plane sheet resistance of the films was found to be half that of the same film on glass substrate, allowing material-independent doubling of output power of any planar thin-film thermoelectric generator. The wall thickness of the fabricated nanotubes was varied within a range of up to 100 nm. The samples show polycrystalline nature with (002) preferred crystal orientation. [ABSTRACT FROM AUTHOR]

We present a method to measure the in-plane thermal conductivity of thin films by the laser flash technique. The method uses a well-defined structure for the analysis. We have realized the structure by conformal deposition of ZnO films of different thicknesses using atomic layer deposition onto a 20 μm thick ion track etched polycarbonate membrane as substrate. By using this procedure we could determine the thermal conductivity of the deposited thin film from the total thermal diffusivity of the nanocomposite structures. The method has been used to obtain the in-plane thermal conductivity of the deposited ZnO layers within the thickness range of less than 100 nm. [ABSTRACT FROM AUTHOR]