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We report on the colloidal synthesis of Cu3VS4 nanocrystals as an earth abundant anode material for sodium-ion battery applications. The nanocrystals were structurally characterized prior to testing in half-cells, where they displayed excellent cycling stability up to 1000 cycles, demonstrating the potential of colloidally synthesised materials for sustainable battery applications.

A facile method utilizing colloidal templating and sucrose as a carbon precursor is used to synthesize highly ordered, porous inverse opal structures as C/TiO _2 nanocomposites. Material characterization shows amorphous TiO _2 and a large pore size of ∼400 nm allowing for enhanced electrolyte penetration. C/TiO _2 inverse opals materials as electrodes in Li-ion battery half cells demonstrate discharge and charge capacities of ∼870 mAh g ^−1 and 470 mAh g ^−1 , respectively, at a current density of 150 mA g ^−1 . The enhanced capacities, which surpass theoretical limits for TiO _2 and carbon based on intercalation reactions, are analyzed under voltammetric conditions to assess relative contributions to capacity from diffusion-limited intercalation and capacitive charge compensation reactions. The porous structure contributes to excellent capacity retention, rate performance and improved Coulombic efficiency (99.6% after 250 cycles), compared to individual carbon and TiO _2 inverse opals.

The morphological changes of Si nanowires (Si NWs) cycled in 1:1 ethylene–carbonate (EC)/diethyl–carbonate (DEC) with or without different additives, fluoroethylene carbonate (FEC) or vinylene carbonate (VC), as well as the composition of the deposited solid–electrolyte interphase layer, are investigated by a combination of experimental microscopic and spectroscopic techniques. Scanning electron microscopy and optical spectroscopy highlight that the NW morphology is better preserved in samples cycled in the presence of FEC and VC additives compared to the additive-free electrolyte. However, only the use of FEC is capable of slightly mitigating the amorphization of silicon upon cycling. The solid electrolyte interphase (SEI) formed over the Si NWs cycled in the additive-free electrolyte is richer in organic and inorganic carbonates compared to the SEI grown in the presence of the VC and FEC additives. Furthermore, both additives are able to remarkably limit the degradation of the LiPF6 salt. Overall, the use of the FEC-additive in the carbonate-based electrolyte promotes both morphological and structural resilience of the Si NWs upon cycling thanks to the optimal composition of the SEI layer.

This perspective reviews recent advances in inverse opal structures, how they have been developed, studied and applied as catalysts, catalyst support materials, as electrode materials for batteries, water splitting applications, solar-to-fuel conversion and electrochromics, and finally as photonic photocatalysts and photoelectrocatalysts. Throughout, we detail some of the salient optical characteristics that underpin recent results and form the basis for light-matter interactions that span electrochemical energy conversion systems as well as photocatalytic systems. Strategies for using 2D as well as 3D structures, ordered macroporous materials such as inverse opals are summarized and recent work on plasmonic–photonic coupling in metal nanoparticle-infiltrated wide band gap inverse opals for enhanced photoelectrochemistry are provided.

Transparent thin films can now be site-selectively patterned and positioned on surface using mask-defined electrodeposition of one oxide and overcoating with a different solution-processed oxide, followed by thermal annealing. Annealing allows an interdiffusion process to create a new oxide that is entirely transparent. A primary electrodeposited oxide can be patterned and the secondary oxide coated over the entire substrate to form high color contrast coplanar thin film tertiary oxide. The authors also detail the phase formation and chemical state of the oxide and how the nature of the electrodeposited layer and the overlayer influence the optical clearing of the patterned oxide film. [ABSTRACT FROM AUTHOR]

Here we show the impact of preferred growth directions and defects in the formation of complex Ge nanowire (NW) structures grown by a simple organic medium based synthesis. Various types of NWs are examined including: straight defect free NWs; periodically bent NWs with precise angles between the NW segments; NWs with mutually exclusive lateral or longitudinal faults; and more complex “wormlike” structures. We show that choice of solvent and reaction temperature can be used to tune the morphology of the NWs formed. The various types of NWs were probed in depth using transmission electron microscopy (TEM), scanning electron microscopy (SEM), selected area electron diffraction (SAED), and dark field TEM (DFTEM). [ABSTRACT FROM AUTHOR]

High yields of both single-crystalline Si and Ge/SiOxcore–shell nanowires were nucleated and grown in metal reactor cells under high-pressure supercritical fluid conditions, without the addition of catalyst particle seeds or a porous template. Nanowire growth was only achieved when the fluid medium of supercritical CO2and the organometallic precursors were used in conjunction with a coordinating solvent, trioctylphosphine. The diameter and length of the nanowires are found to be in the ranges of 30 to 60 nm and 1 to 10 µm, respectively. The correlation of nanowire growth with the eutectic binary phase diagrams of the semiconductor–metal and the presence of metal impurities at the base of the synthesized nanowires suggest a supercritical fluid–solid–solid growth mechanism occurring from the reaction cell walls. The nanowires are characterized by transmission electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and scanning electron microscopy. The electrical characteristics for individually picked nanowires are also investigated by means of mechanical nanoprobing. [ABSTRACT FROM AUTHOR]

Si nanowires (NWs) are shown to develop internal mesoporosity during metal assisted chemical etching from Si wafers. The onset of internal porosity in n+-Si(100) compared to p-Si(100) is examined through a systematic investigation of etching parameters (etching time, AgNO3 concentration, HF % and temperature). Electron microscopy and Raman scattering show that specific etching conditions reduce the size of the internal Si nanocrystallites in the internal mesoporous structure to 3–5 nm. Mesoporous NWs are found to have diameters as large as 500 nm, compared to ∼100 nm for p-NWs that develop surface roughness. Etching of Si (100) wafers results in (100)-oriented NWs forming a three-fold symmetrical surface texture, without internal NW mesoporosity. The vertical etching rate is shown to depend on carrier concentration and degree of internal mesoporosity formation. Raman scattering of the transverse optical phonon and photoluminescence measurements confirm quantum size effects, phonon scattering and visible intense red light emission between 685 and 720 nm in internally mesoporous NWs associated with the etching conditions. Laser power heating of NWs confirms phonon confinement and scattering, which is demonstrated to be a function of the internal mesoporosity development. We also demonstrate the limitation of mesoporosity formation in n+-Si NWs and development of porosity within p-Si NWs by controlling the etching conditions. Lastly, the data confirm that phonon confinement and scattering often reported for Si NWs is due to surface-bound and internal nanostructure, rather than simply a diameter reduction in NW materials. [ABSTRACT FROM AUTHOR]