Search

Summary A hallmark of Parkinson's disease (PD) is the preferential loss of substantia nigra dopamine neurons. Here, we identify a new par kin i nteracting s ubstrate, PARIS (ZNF746), whose levels are regulated by the ubiquitin proteasome system via binding to and ubiquitination by the E3 ubiquitin ligase, parkin. PARIS is a KRAB and zinc finger protein that accumulates in models of parkin inactivation and in human PD brain. PARIS represses the expression of the transcriptional coactivator, PGC-1α and the PGC-1α target gene, NRF-1 by binding to insulin response sequences in the PGC-1α promoter. Conditional knockout of parkin in adult animals leads to progressive loss of dopamine (DA) neurons in a PARIS-dependent manner. Moreover, overexpression of PARIS leads to the selective loss of DA neurons in the substantia nigra, and this is reversed by either parkin or PGC-1α coexpression. The identification of PARIS provides a molecular mechanism for neurodegeneration due to parkin inactivation. PaperClip

In this paper, we describe our fabrication of a solution-processed organic thin-film transistor (OTFT) with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as the organic semiconductor (OSC) and methyl-siloxane-based spin-on glass (SOG) as the inorganic gate dielectric. Also, we compare these results with OTFTs using different substrates such as a silicon wafer or a polyethersulfone (PES) substrate. From electrical measurements, we observed exemplary I – V characteristics for these TFTs. We calculated the field effect mobility to be 0.007 cm 2 /V s for an OTFT fabricated on a wafer and 0.004 cm 2 /V s for an OTFT fabricated on a PES substrate.

We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current ON/OFF ratio, and subthreshold swing, which were 6.48 times 10-3 cm2/V ldr s, -13 V, ~100, and 1.83 V/dec, respectively.

Flows in a ramjet inlet is simulated for the study of the rocket-ramjet transition. The flow is unsteady, two-dimensional axisymmetric, compressible and turbulent. Double time marching method is used for the unsteady calculation and HLLC method is used as a higher order MUSCL method. As for turbulent calculation, k — ω SST model is used for more accurate viscous calculations. Sinusoidal pressure perturbation is given at the exit and the flow fields at the inlet is studied. The cruise condition as well as the ground test condition are considered. The pressure level for the ground test condition is relatively low and the effect of the pressure perturbation at the combustion chamber is small. The normal shock at the cruise condition is very sensitive to the pressure perturbation and can be easily detached from the cowl when the exit pressure is relatively high. The sudden decrease in the mass flux is observed when the inlet flow becomes subcriticai, which can make the inlet incapable. The amplitude of travelling pressure waves becomes larger as the downstream pressure increases, and the wavelength becomes shorter as Mach number increases. The phase difference of the travelling perturbed pressure wave in space is 180 degree.

By the SOP (system-on-panel) technology with laser crystallization process, all the driver circuits required for 6-bit color QVGA (320 × RGB × 240) LCD are integrated on panel. The integrated data driver comprises a new ramp-driven 6-bit DAC. The characteristics and uniformity of the LTPS (low temperature polycrystalline silicon) has been remarkably enhanced by applying multi-shot ELA (excimer laser annealing) process and surface treatment. The characteristics of the poly-Si TFTs for integration of driver circuits are following: (1) in NMOS, V th ∼ 1 V and mobility ∼ 240 cm 2 /V s, (2) in PMOS, V th ∼ −1.8 V and mobility ∼ 100 cm 2 /V s.