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Abstract The recent realizations of the quantum anomalous Hall effect (QAHE) in MnBi2Te4 and MnBi4Te7 benchmark the (MnBi2Te4)(Bi2Te3)n family as a promising hotbed for further QAHE improvements. The family owes its potential to its ferromagnetically (FM) ordered MnBi2Te4 septuple layers (SLs). However, the QAHE realization is complicated in MnBi2Te4 and MnBi4Te7 due to the substantial antiferromagnetic (AFM) coupling between the SLs. An FM state, advantageous for the QAHE, can be stabilized by interlacing the SLs with an increasing number n of Bi2Te3 quintuple layers (QLs). However, the mechanisms driving the FM state and the number of necessary QLs are not understood, and the surface magnetism remains obscure. Here, robust FM properties in MnBi6Te10 (n = 2) with Tc ≈ 12 K are demonstrated and their origin is established in the Mn/Bi intermixing phenomenon by a combined experimental and theoretical study. The measurements reveal a magnetically intact surface with a large magnetic moment, and with FM properties similar to the bulk. This investigation thus consolidates the MnBi6Te10 system as perspective for the QAHE at elevated temperatures.

A Correction to this paper has been published: https://doi.org/10.1038/s41535-021-00314-9

In semiconductors containing heavy elements, the Rashba spin-orbit interaction can couple the momentum and spin of electrons, yielding spintronic functionality. Here, the authors image band- and orbital-dependent spin-textures in the layered polar semiconductor BiTeI, demonstrating behaviour beyond the standard Rashba model.

Combinations of nontrivial band topology and long-range magnetic order hold promise for realizations of novel spintronic phenomena, such as the quantum anomalous Hall effect and the topological magnetoelectric effect. Following theoretical advances, material candidates are emerging. Yet, so far a compound that combines a band-inverted electronic structure with an intrinsic net magnetization remains unrealized. MnBi_{2}Te_{4} has been established as the first antiferromagnetic topological insulator and constitutes the progenitor of a modular (Bi_{2}Te_{3})_{n}(MnBi_{2}Te_{4}) series. Here, for n=1, we confirm a nonstoichiometric composition proximate to MnBi_{4}Te_{7}. We establish an antiferromagnetic state below 13 K followed by a state with a net magnetization and ferromagnetic-like hysteresis below 5 K. Angle-resolved photoemission experiments and density-functional calculations reveal a topologically nontrivial surface state on the MnBi_{4}Te_{7}(0001) surface, analogous to the nonmagnetic parent compound Bi_{2}Te_{3}. Our results establish MnBi_{4}Te_{7} as the first band-inverted compound with intrinsic net magnetization providing a versatile platform for the realization of magnetic topological states of matter.

The layered polar semiconductor BiTeI exhibits large Rashba-type spin–orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.

The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), electron diffraction (SPA-LEED) and density functional theory calculations. Our measurements confirm a previously reported coexistence of Te- and I-terminated surface areas originating from bulk stacking faults and find a characteristic length scale of ∼100 nm for these areas. We show that the two terminations exhibit distinct types of atomic defects in the surface and subsurface layers. For electronic states resided on the I terminations we observe an energy shift depending on the time after cleavage. This aging effect is successfully mimicked by depositon of Cs adatoms found to accumulate on top of the I terminations. As shown theoretically on a microscopic scale, this preferential adsorbing behaviour results from considerably different energetics and surface diffusion lengths at the two terminations. Our investigations provide insight into the importance of structural imperfections as well as intrinsic and extrinsic defects on the electronic properties of BiTeI surfaces and their temporal stability.

The surface alloy Bi/Cu(111) shows a paradigmatic free-electron-like surface state with a very large Rashba-type spin–orbit splitting. Using angle-resolved photoemission we investigate how adsorbates of different chemical nature influence the size of the spin splitting in this system. We find that the adsorption of small amounts of monovalent Na atoms leads to an enhancement of the spin splitting while an overlayer of the closed-shell rare gas Xe causes a reduction. The latter result is in contrast to the Au(111) surface for which an increased splitting size after Xe-adsorption was observed. We discuss these experimental findings in terms of the characteristic differences of the surface state wave functions and their spatial deformation in the presence of different types of adsorbates. Our results provide insight into the complex interplay of atomic and interface potential gradients governing the Rashba effect.