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Dielectric REduced SURface Field (RESURF) is a promising concept to enhance the breakdown voltage of power semiconductor devices. This letter reports a set of simple and unified analytical equations to calculate the breakdown voltage, critical electric field, and depletion widths for dielectric RESURF p-n junctions. These analytical models are derived from the basic power law relationship between the p-n junction breakdown voltage and doping concentration, and use the material and structural information of the dielectric RESURF p-n junction as variables to accurately predict reverse bias performance. The analytically calculated results are compared with 2D TCAD simulation results for Si, GaN, and SiC in combination with dielectrics, such as SiO2 and Si3N4, and show reasonable agreement well within 10% of error.

DC circuit protection applications provide a unique market opportunity for wide-bandgap (WBG) semiconductors, which are outside the conventional focus on power electronic converters. This paper presents an overview of emerging dc power systems, the needs for dc solid-state circuit breakers (SSCBs), and the benefits and advantages of various WBG SSCB concepts. Furthermore, a new class of self-powered SSCBs based on SiC or GaN normally-ON switching devices is proposed in this paper. One implementation of the SSCB concept based on a 1200 V SiC JFET experimentally demonstrated turn-off of a fault current of 125 A at a dc voltage of 400 V within $1~\mu $ s without requiring any external power supply. The SSCB detects short-circuit faults by sensing its drain–source voltage rise and draws power from the fault condition to turn off the SiC JFET. Various implementations of the SSCB concept for unipolar and bipolar capability using both SiC and GaN are also discussed from both device and circuit perspectives. It is concluded that very low ON-resistance normally-ON WBG switching devices are excellent candidates for the emerging SSCB applications.