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Background: The increasing use of complex and high dose‐rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre‐treatment quality assurance (QA) measurements alone, many countries are now mandating the use of in vivo dosimetry, whereby a dosimeter is placed on the surface of the patient during treatment. Ideally, in vivo detectors should be flexible to conform to a patient's irregular surfaces. Purpose: This study aims to characterize a novel hydrogenated amorphous silicon (a‐Si:H) radiation detector for the dosimetry of therapeutic x‐ray beams. The detectors are flexible as they are fabricated directly on a flexible polyimide (Kapton) substrate. Methods: The potential of this technology for application as a real‐time flexible detector is investigated through a combined dosimetric and flexibility study. Measurements of fundamental dosimetric quantities were obtained including output factor (OF), dose rate dependence (DPP), energy dependence, percentage depth dose (PDD), and angular dependence. The response of the a‐Si:H detectors investigated in this study are benchmarked directly against commercially available ionization chambers and solid‐state diodes currently employed for QA practices. Results: The a‐Si:H detectors exhibit remarkable dose linearities in the direct detection of kV and MV therapeutic x‐rays, with calibrated sensitivities ranging from (0.580 ± 0.002) pC/cGy to (19.36 ± 0.10) pC/cGy as a function of detector thickness, area, and applied bias. Regarding dosimetry, the a‐Si:H detectors accurately obtained OF measurements that parallel commercially available detector solutions. The PDD response closely matched the expected profile as predicted via Geant4 simulations, a PTW Farmer ionization chamber and a PTW ROOS chamber. The most significant variation in the PDD performance was 5.67%, observed at a depth of 3 mm for detectors operated unbiased. With an external bias, the discrepancy in PDD response from reference data was confined to ± 2.92% for all depths (surface to 250 mm) in water‐equivalent plastic. Very little angular dependence is displayed between irradiations at angles of 0° and 180°, with the most significant variation being a 7.71% decrease in collected charge at a 110° relative angle of incidence. Energy dependence and dose per pulse dependence are also reported, with results in agreement with the literature. Most notably, the flexibility of a‐Si:H detectors was quantified for sample bending up to a radius of curvature of 7.98 mm, where the recorded photosensitivity degraded by (−4.9 ± 0.6)% of the initial device response when flat. It is essential to mention that this small bending radius is unlikely during in vivo patient dosimetry. In a more realistic scenario, with a bending radius of 15–20 mm, the variation in detector response remained within ± 4%. After substantial bending, the detector's photosensitivity when returned to a flat condition was (99.1 ± 0.5)% of the original response. Conclusions: This work successfully characterizes a flexible detector based on thin‐film a‐Si:H deposited on a Kapton substrate for applications in therapeutic x‐ray dosimetry. The detectors exhibit dosimetric performances that parallel commercially available dosimeters, while also demonstrating excellent flexibility results. [ABSTRACT FROM AUTHOR]

Integrated photonics on Silicon-On-Insulator (SOI) substrates is a well developed research field that has already significantly impacted various fields, such as quantum computing, micro sensing devices, biosensing, and high-rate communications. Although quite complex circuits can be made with such technology, everything is based on a few 'building blocks' which are then combined to form more complex circuits. This review article provides a detailed examination of the state of the art of integrated photonic building blocks focusing on passive elements, covering fundamental principles and design methodologies. Key components discussed include waveguides, fiber-to-chip couplers, edges and gratings, phase shifters, splitters and switches (including y-branch, MMI, and directional couplers), as well as subwavelength grating structures and ring resonators. Additionally, this review addresses challenges and future prospects in advancing integrated photonic circuits on SOI platforms, focusing on scalability, power efficiency, and fabrication issues. The objective of this review is to equip researchers and engineers in the field with a comprehensive understanding of the current landscape and future trajectories of integrated photonic components on SOI substrates with a 220 nm thick device layer of intrinsic silicon. [ABSTRACT FROM AUTHOR]

Integrated photonic platforms have rapidly emerged as highly promising and extensively investigated systems for advancing classical and quantum information technologies, since their ability to seamlessly integrate photonic components within the telecommunication band with existing silicon-based industrial processes offers significant advantages. However, despite this integration facilitating the development of novel devices, fostering fast and reliable communication protocols and the manipulation of quantum information, traditional integrated silicon photonics faces inherent physical limitations that necessitate a challenging trade-off between device efficiency and spatial footprint. To address this issue, researchers are focusing on the integration of nanoscale materials into photonic platforms, offering a novel approach to enhance device performance while reducing spatial requirements. These developments are of paramount importance in both classical and quantum information technologies, potentially revolutionizing the industry. In this review, we explore the latest endeavors in hybrid photonic platforms leveraging the combination of integrated silicon photonic platforms and nanoscale materials, allowing for the unlocking of increased device efficiency and compact form factors. Finally, we provide insights into future developments and the evolving landscape of hybrid integrated photonic nanomaterial platforms. [ABSTRACT FROM AUTHOR]

Single-photon sources are important for integrated photonics and quantum technologies, and can be used in quantum key distribution, quantum computing, and sensing. Color centers in the solid state are a promising candidate for the development of the next generation of single-photon sources integrated in quantum photonics devices. They are point defects in a crystal lattice that absorb and emit light at given wavelengths and can emit single photons with high efficiency. The landscape of color centers has changed abruptly in recent years, with the identification of a wider set of color centers and the emergence of new solid-state platforms for room-temperature single-photon generation. This review discusses the emerging material platforms hosting single-photon-emitting color centers, with an emphasis on their potential for the development of integrated optical circuits for quantum photonics. [ABSTRACT FROM AUTHOR]

Since the 1980s, researchers have taken giant steps in understanding how to use quantum mechanics for solving real problems—for example, making a computer that works according to the laws of quantum mechanics. In recent decades, researchers have tried to develop a platform for quantum information and computation that can be integrated into digital and telecom technologies without the need of a cryogenic environment. The current status of research in the field of quantum integrated photonics will be reviewed. A review of the most common integrated photonic platforms will be given, together with the main achievements and results in the last decade. [ABSTRACT FROM AUTHOR]