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Natural killer (NK) cells are equipped with anti-Epstein-Barr virus (EBV) function, however, whether EBV infection will affect NK cells reconstitution after allogeneic hematopoietic stem cell transplantation (allo-HSCT) remains unclear. To identify the characteristics of NK cells, we prospectively enrolled 11 patients who occurred EBV reactivation post allo-HSCT and 11 patients without EBV infection as control. We found that that EBV infection induced the expansion of CD56bright and NKG2A+KIR− NK subsets,and decreased the cytotoxicity function of NK cells. The frequency of NKG2A+KIR- NK cells were higher in patients who progressed into post-transplant lymphoproliferative disorder (PTLD) than EBV viremia patients, which also correlated with decreased proliferation and cytotoxic function. By screening the activation receptors of NK cells, we found the DNAM-1+CD56bright NK cells is significantly increased after EBV stimulation, further we demonstrated that DNAM-1 is essential for EBV induced NK cells activation as the cytokine release against EBV-transformed lymphoblastoid cell lines(EBV-LCLs) of CD56bright NK cells were significantly decreased after DNAM-1 blockade. NK cells infusion suppressed the progression of EBV-related tumor mice model. A prospective cohort indicated that old donor age was an independent risk factor for EBV infection. Rapid CD56bri expansion and high expression of DNAM-1 on CD56bri NK cells in response to EBV reactivation correlated with rapid EBV clearance post allo-HSCT in patients with younger donors. In summary, our data showed that high expression of DNAM-1 receptors on NK cell may participate protective CD56bri NK cells response to EBV infection after allo-HSCT. [ABSTRACT FROM AUTHOR]

Reversible alternation between bipolar and unipolar resistive switching (RS) modes was observed by controlling voltage-polarity in Ag/MoS2/Au memory on polyethylene terephthalate (PET) substrate. The temperature-dependent low-resistance-state and Raman measurement indicated that Ag and sulphur vacancy (Vs)-based conductive filaments (CFs) were responsible for these two RS modes. The two kinds of CFs had different responses under positive read voltages. Thus, a new operation scheme of multilevel memory was demonstrated in which multiple states were distinguished by CF composition rather than resistance values. The memory capacity of the cell could be further extended by adjustments in CFs’ size in each mode. The RS performance of the device did not degrade under bending conditions even over 104 bending cycles, which indicated good mechanical flexibility. The present Ag/MoS2/Au memory has promise for future high-density flexible information storage. [ABSTRACT FROM AUTHOR]