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Abstract Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers’ potential energy is broken, usually, via a displacement electric field applied in double-gate devices. Here, we introduce a twistronic stack comprising both MLG and BLG, synthesized via chemical vapor deposition, showing a Bernal gap in the absence of external fields. Although a large (~30°) twist angle decouples the MLG and BLG electronic bands near Fermi level, proximity-induced energy shifts in the outermost layers result in a built-in asymmetry, which requires a displacement field of 0.14 V/nm to be compensated. The latter corresponds to a ~10 meV intrinsic BLG gap, a value confirmed by our thermal-activation measurements. The present results highlight the role of structural asymmetry and encapsulating environment, expanding the engineering toolbox for monolithically-grown graphene multilayers.

Abstract Exploiting the light–matter interplay to realize advanced light responsive multimodal platforms is an emerging strategy to engineer bioinspired systems such as optoelectronic synaptic devices. However, existing neuroinspired optoelectronic devices rely on complex processing of hybrid materials which often do not exhibit the required features for biological interfacing such as biocompatibility and low Young’s modulus. Recently, organic photoelectrochemical transistors (OPECTs) have paved the way towards multimodal devices that can better couple to biological systems benefiting from the characteristics of conjugated polymers. Neurohybrid OPECTs can be designed to optimally interface neuronal systems while resembling typical plasticity-driven processes to create more sophisticated integrated architectures between neuron and neuromorphic ends. Here, an innovative photo-switchable PEDOT:PSS was synthesized and successfully integrated into an OPECT. The OPECT device uses an azobenzene-based organic neuro-hybrid building block to mimic the retina’s structure exhibiting the capability to emulate visual pathways. Moreover, dually operating the device with opto- and electrical functions, a light-dependent conditioning and extinction processes were achieved faithful mimicking synaptic neural functions such as short- and long-term plasticity.

Abstract Optoelectronics is a valuable solution to scale up wireless links frequency to sub-THz in the next generation antenna systems and networks. Here, we propose a low-power consumption, small footprint building block for 6 G and 5 G new radio wireless transmission allowing broadband capacity (e.g., 10–100 Gb/s per link and beyond). We demonstrate a wireless datalink based on graphene, reaching setup limited sub-THz carrier frequency and multi-Gbit/s data rate. Our device consists of a graphene-based integrated optoelectronic mixer capable of mixing an optically generated reference oscillator approaching 100 GHz, with a baseband electrical signal. We report >96 GHz optoelectronic bandwidth and −44 dB upconversion efficiency with a footprint significantly smaller than those of state-of-the-art photonic transmitters (i.e.,

Abstract The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact resistance standards that can operate above cryogenic temperatures. However, this requires large magnetic fields that are accessible only in a few high magnetic field facilities. Here, we report on the quantum Hall effect in graphene encapsulated by the ferroelectric insulator CuInP2S6. Electrostatic gating of the graphene channel enables the Fermi energy to be tuned so that electrons in the localized states of the insulator are in equilibrium with the current-carrying, delocalized states of graphene. Due to the presence of strongly bound states in this hybrid system, a quantum Hall plateau is observed over a wide range of temperatures in relatively modest magnetic fields.

Emerging nanotechnologies offer numerous opportunities in the field of regenerative medicine and have been widely explored to design novel scaffolds for the regeneration and stimulation of nerve tissue. In this review, we focus on peripheral nerve regeneration. First, we introduce the biomedical problem and the present status of nerve conduits that can be used to guide, fasten and enhance regeneration. Then, we thoroughly discuss graphene as an emerging candidate in nerve tissue engineering, in light of its chemical, tribological and electrical properties. We introduce the graphene forms commonly used as neural interfaces, briefly review their applications, and discuss their potential toxicity. We then focus on the adoption of graphene in peripheral nervous system applications, a research field that has gained in the last years ever-increasing attention. We discuss the potential integration of graphene in guidance conduits, and critically review graphene interaction not only with peripheral neurons, but also with non-neural cells involved in nerve regeneration; indeed, the latter have recently emerged as central players in modulating the immune and inflammatory response and accelerating the growth of new tissue.

Abstract Charge transfer processes in two-dimensional van der Waals heterostructures enable upconversion of low energy photons and efficient charge carriers extraction. Here we use broadband ultrafast optical spectroscopy to track charge transfer dynamics in large-area 2D heterostructures made of epitaxial single-layer tungsten disulfide (WS2) grown by chemical vapour deposition on graphene. Selective carrier photoexcitation in graphene, with tunable near-infrared photon energies as low as 0.8 eV (i.e. lower than half of the optical bandgap of WS2), results in an almost instantaneous bleaching of the WS2 excitonic peaks in the visible range, due to the interlayer charge transfer process. We find that the charge transfer signal is strongly non-linear with the pump fluence and it becomes progressively more linear at increasing pump photon energies, while the interlayer photoinjection rate is constant in energy, reflecting the spectrally flat absorbance of graphene. We ascribe the interlayer charge transfer to a fast transfer of hot carriers, photogenerated in graphene, to the semiconducting layer. The measured sub-20-fs hot-carrier transfer sets the ultimate timescale for this process. Besides their fundamental interest, our results are technologically relevant because, given the capability of large-area deterministic growth of the heterostructure, they open up promising paths for novel 2D photodetectors, also potentially scalable to industrial platforms.

Abstract Stable all‐inorganic CsPbX3 perovskite nanocrystals (PNCs) with high optical yield can be used in combination with graphene as photon sensors with high responsivity (up to 106 A W−1) in the VIS‐UV range. The performance of these perovskite/graphene field effect transistors (FET) is mediated by charge transfer processes at the perovskite – graphene interface. Here, the effects of high electric (up to 3000 kV cm−1) and magnetic (up to 60 T) fields applied perpendicular to the graphene plane on the charge transfer are reported. The authors demonstrate electric‐ and magnetic‐field dependent charge transfer and a slow (>100 s) charge dynamics. Magneto‐transport experiments in constant (≈0.005 T s−1) and pulsed (≈1000 T s−1) magnetic fields reveal pronounced hysteresis effects in the transfer characteristics of the FET. A magnetic time is used to explain and model differences in device behavior under fast (pulsed) and slowly (continuous) changing magnetic fields. The understanding of the dynamics of the charge transfer in perovskite/graphene heterostructures developed here is relevant for exploitation of these hybrid systems in electronics and optoelectronics, including ultrasensitive photon detectors and FETs for metrology.

Abstract The opto‐electronic properties of semiconducting 2D materials can be flexibly manipulated by engineering the atomic‐scale environment. This can be done by including 2D materials in tailored van der Waals (vdW) stacks, whose optical response is a function of the number and the type of adjacent 2D layers. This work reports a systematic investigation of the dielectric function of 2D semiconducting WS2 in various stacking configurations: monolayer, 3R/2H homobilayer, and WS2/MoS2 heterobilayer. Reliable, Kramers–Kronig‐consistent dielectric functions are obtained for WS2 in each configuration by means of spectroscopic ellipsometry (SE) and related parametric optical modeling in a wide spectral range (1.55–3.10 eV). The results of SE are combined with photoluminescence and absorbance spectra to identify the spectral position of the main excitonic features in WS2, which manifest sizable redshifts depending on the stacking configuration. These results represent a consistent reference set for the dielectric function of WS2 in vdW stacking configurations of particular interest for the scientific and technological field, and can be fruitfully exploited for reliable predictions of the optical response of WS2‐containing systems.

Paper is a promising substrate for flexible and environmentally sustainable electronic devices. Here, the authors combine chemical vapor deposition of MoS2 with inkjet printing of a hexagonal boron nitride (hBN) dielectric and silver electrodes, to fabricate flexible MoS2 field-effect transistors on paper, and then combine the latter with printed graphene resistors and silver interconnects to create inverters, logic gates and current mirrors.

Dimensionality of a material is a critical parameter to control its electronic properties. Here, the authors report that 2D gold transforms from a semiconductor, with valence band maximum 50 meV below the Fermi level, into a metal by tuning the number of layers from 1 to 2 in between graphene and SiC.

Efficient light harvesting devices need to combine strong absorption in the visible spectral range with efficient ultrafast charge separation. These features commonly occur in novel ultimately thin van der Waals heterostructures with type II band alignment. Recently, ultrafast charge separation was also observed in monolayer WS2/graphene heterostructures with type I band alignment. Here we use time- and angle-resolved photoemission spectroscopy to show that ultrafast charge separation also occurs at the interface between bilayer WS2 and graphene indicating that the indirect band gap of bilayer WS2 does not affect the charge transfer to the graphene layer. The microscopic insights gained in the present study will turn out to be useful for the design of novel optoelectronic devices.

In recent years, transition metal dichalcogenides have been attracting an increasing interest in the biomedical field, thus implying the need of a deeper understanding of their impact on cell behavior. In this study we investigate tungsten disulfide (WS2) grown via chemical vapor deposition (CVD) on a transparent substrate (sapphire) as a platform for neural-like cell culture. We culture SH-SY5Y human neuroblastoma cells on WS2, using graphene, sapphire and standard culture well as controls. The quality, thickness and homogeneity of the materials is analyzed using atomic force microscopy and Raman spectroscopy. The cytocompatibility of CVD WS2 is investigated for the first time by cell viability and differentiation assessment on SH-SY5Y cells. We find that cells differentiated on WS2, displaying a viability and neurite length comparable with the controls. These findings shine light on the possibility of using WS2 as a cytocompatible material for interfacing neural cells.

The combination of metallic nanostructures with two-dimensional transition metal dichalcogenides is an efficient way to make the optical properties of the latter more appealing for opto-electronic applications. In this work, we investigate the optical properties of monolayer WS2 flakes grown by chemical vapour deposition and transferred onto a densely-packed array of plasmonic Au nanoparticles (NPs). The optical response was measured as a function of the thickness of a dielectric spacer intercalated between the two materials and of the system temperature, in the 75–350 K range. We show that a weak interaction is established between WS2 and Au NPs, leading to temperature- and spacer-thickness-dependent coupling between the localized surface plasmon resonance of Au NPs and the WS2 exciton. We suggest that the closely-packed morphology of the plasmonic array promotes a high confinement of the electromagnetic field in regions inaccessible by the WS2 deposited on top. This allows the achievement of direct contact between WS2 and Au while preserving a strong connotation of the properties of the two materials also in the hybrid system.

In this work we have critically reviewed the processes in high-temperature sublimation growth of graphene in Ar atmosphere using closed graphite crucible. Special focus is put on buffer layer formation and free charge carrier properties of monolayer graphene and quasi-freestanding monolayer graphene on 4H–SiC. We show that by introducing Ar at higher temperatures, TAr, one can shift the formation of the buffer layer to higher temperatures for both n-type and semi-insulating substrates. A scenario explaining the observed suppressed formation of buffer layer at higher TAr is proposed and discussed. Increased TAr is also shown to reduce the sp3 hybridization content and defect densities in the buffer layer on n-type conductive substrates. Growth on semi-insulating substrates results in ordered buffer layer with significantly improved structural properties, for which TAr plays only a minor role. The free charge density and mobility parameters of monolayer graphene and quasi-freestanding monolayer graphene with different TAr and different environmental treatment conditions are determined by contactless terahertz optical Hall effect. An efficient annealing of donors on and near the SiC surface is suggested to take place for intrinsic monolayer graphene grown at 2000 ∘C, and which is found to be independent of TAr. Higher TAr leads to higher free charge carrier mobility parameters in both intrinsically n-type and ambient p-type doped monolayer graphene. TAr is also found to have a profound effect on the free hole parameters of quasi-freestanding monolayer graphene. These findings are discussed in view of interface and buffer layer properties in order to construct a comprehensive picture of high-temperature sublimation growth and provide guidance for growth parameters optimization depending on the targeted graphene application.

In this paper, we present a study of tungsten disulfide (WS2) two-dimensional (2D) crystals, grown on epitaxial Graphene. In particular, we have employed scanning electron microscopy (SEM) and µRaman spectroscopy combined with multifunctional scanning probe microscopy (SPM), operating in peak force–quantitative nano mechanical (PF-QNM), ultrasonic force microscopy (UFM) and electrostatic force microscopy (EFM) modes. This comparative approach provides a wealth of useful complementary information and allows one to cross-analyze on the nanoscale the morphological, mechanical, and electrostatic properties of the 2D heterostructures analyzed. Herein, we show that PF-QNM can accurately map surface properties, such as morphology and adhesion, and that UFM is exceptionally sensitive to a broader range of elastic properties, helping to uncover subsurface features located at the buried interfaces. All these data can be correlated with the local electrostatic properties obtained via EFM mapping of the surface potential, through the cantilever response at the first harmonic, and the dielectric permittivity, through the cantilever response at the second harmonic. In conclusion, we show that combining multi-parametric SPM with SEM and µRaman spectroscopy helps to identify single features of the WS2/Graphene/SiC heterostructures analyzed, demonstrating that this is a powerful tool-set for the investigation of 2D materials stacks, a building block for new advanced nano-devices.

Graphene-based electrodes are very promising for molecular electronics and spintronics. Here we report a systematic characterization of the electroburning (EB) process, leading to the formation of nanometer-spaced gaps, on different types of few-layer graphene (namely mechanically exfoliated graphene on SiO2, graphene epitaxially grown on the C-face of SiC and turbostratic graphene discs deposited on SiO2) under air and vacuum conditions. The EB process is found to depend on both the graphene type and on the ambient conditions. For the mechanically exfoliated graphene, performing EB under vacuum leads to a higher yield of nanometer-gap formation than working in air. Conversely, for graphene on SiC the EB process is not successful under vacuum. Finally, the EB is possible with turbostratic graphene discs only after the creation of a constriction in the sample using lithographic patterning.

Graphene displays properties that make it appealing for neuroregenerative medicine, yet its interaction with peripheral neurons has been scarcely investigated. Here, we culture on graphene two established models for peripheral neurons: PC12 cells and DRG primary neurons. We perform a nano-resolved analysis of polymeric coatings on graphene and combine optical microscopy and viability assays to assess the material cytocompatibility and influence on differentiation. We find that differentiated PC12 cells display a remarkably increased neurite length on graphene (up to 27%) with respect to controls. Notably, DRG primary neurons survive both on bare and coated graphene. They present dense axonal networks on coated graphene, while they form cell islets characterized by dense axonal bundles on uncoated graphene. These findings indicate that graphene holds potential for nerve tissue regeneration and might pave the road to novel concepts of active nerve conduits.

We use micro-Raman spectroscopy to study strain in free-standing graphene monolayers anchored to SiN holes of non-circular geometry. We show that a uniform differential pressure load yields measurable deviations from hydrostatic strain, conventionally observed in radially symmetric microbubbles. A pressure load of 1 bar yields a top hydrostatic strain of ≈ 0.7% and a G± splitting of 10 cm−1 in graphene clamped to elliptical boundaries with axes 40 and 20 μm, in good agreement with the calculated anisotropy Δε ≈ 0.6% and consistently with recent reports on Grüneisen parameters. The implementation of arbitrary strain configurations by designing suitable boundary clamping conditions is discussed.

The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure from the conventional quantum Hall characteristics. In particular, we observe anomalous values of the quantized resistance and a peculiar asymmetry with magnetic field which was not observed before for graphene on SiC. A quantitative model involving enhanced inter-channel scattering mediated by the presence of bilayer inclusions is presented that successfully explains the observed symmetry properties. [ABSTRACT FROM AUTHOR]

We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the impact of LAO on the substrate. Micro-Raman (μ-Raman) spectroscopy was employed to demonstrate the presence of two oxidation regimes depending on the applied bias. We show that partial and total etching of monolayer graphene can be achieved by tuning the bias voltage during LAO. Finally, a complete compositional characterization was achieved by scanning electron microscopy and energy dispersive spectroscopy. [ABSTRACT FROM AUTHOR]

Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ∼50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, multiple Andreev reflections were observed, and an inelastic scattering length of about 900 nm was derived. [ABSTRACT FROM AUTHOR]

The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure from the conventional quantum Hall characteristics. In particular, we observe anomalous values of the quantized resistance and a peculiar asymmetry with magnetic field which was not observed before for graphene on SiC. A quantitative model involving enhanced inter-channel scattering mediated by the presence of bilayer inclusions is presented that successfully explains the observed symmetry properties. [ABSTRACT FROM AUTHOR]