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Research was conducted to examine two CoSi2/Si(1-x)Ge(sub x)/Si(100) heterostructures with different Ge content and developed by molecular beam epitaxy. Characterization was done using high resolution electron microscopy. Results indicate that different interface structures exist between the Si(sub 1-x)Ge(sub x) layer and the CoSi2 thin film although the prevailing interfacial configuration is similar to the unreconstructed interface present at the CoSi2/Si(100) interface.

Pd/Ge/Au/Pt/Au ohmic contacts on n-type GaSb grown by molecular beam epitaxy was developed to investigate the strong diffusion into the semiconductor for low temperature stress conditions. The resistivity was found to be very responsive to varying thickness of the different layers and to annealing conditions. Results of the microstructure analysis using sputtered neutral mass spectroscopy and cross-sectional transmission electron microscopy suggested that both the diffusion of Ge into GaSb and the formation of a PdGe state were essential to the annealing processes.

The lifetime of the minority charge carriers in polycrystalline Cadmium Telluride (pc-CdTe) for solar cell applications is a crucial material parameter and has been determined by analysis of the decay curves of the luminescence signal. Both the lateral and the transversal distributions of the carrier lifetime on the surface and in the bulk of pc-CdTe material as well as the respective solar cell characteristics were measured as a function of the deposition technique, the activation treatment, and the incorporation of additional group-V elements. The results are compared to prior studies. It was found that an activation process passivates grain boundaries and increases the carrier lifetime, which is then higher at the pn-junction than at the surface. Furthermore, nitrogen and phosphorus doping of the CdTe absorber material influences the charge carrier lifetime. The results show that the spatial resolved measurement of the carrier lifetime in pc-CdTe gives an important insight to the charge carrier dynamics of the material. [ABSTRACT FROM AUTHOR]

Presents information on a study which characterized heterostructures with different Germanium content by high-resolution electron microscopy. Experimental details; Results; Conclusions.

This report highlights the combination of the FluoTime 300 photoluminescence spectrometer with a FluoMic add-on as a powerful tool for photophysical research and applications, yielding spectral, temporal, and spatial information on a wide range of samples. The steady-state and time-resolved measurement capabilities of this combination are demonstrated reflecting a broad range of applications. [ABSTRACT FROM AUTHOR]