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This paper describes the synthesis and characterization of new organic semiconductors based on pyrrolo[1,2-i][1,7]phenanthrolines in the form of thin layers. The thin layers, produced via the spin coating method (with a thickness of 10–11 μm), were investigated for their electrical and optical properties. After heat treatment at temperatures ranging from 210 to 240 °C, the layers displayed consistent and reproducible properties. The layers exhibited n-type semiconductor behavior, with a thermal activation energy (Ea) in the range of 0.75–0.78 eV. Additionally, the layers showed transmittance values of 84–92% in the visible and near-infrared spectral ranges, with a direct optical band gap (Egod) ranging from 3.13 to 4.11 eV. These thin layers have potential applications in electronic devices such as thermistors, as well as in nanoelectronics and optoelectronics. Overall, these new organic semiconductors show promising properties for practical implementation in various electronic applications.

In this work, optical, including photoluminescence and photosensitivity, characteristics of micrometer-sized flexible n (p)–InSe/In2O3 heterojunctions, obtained by heat treatment of single-crystalline InSe plates doped with (0.5 at.%) Cd (Sn), in a water-vapor- and oxygen-enriched atmosphere, are investigated. The Raman spectrum of In2O3 layers on an InSe:Sn substrate, in the wavelength range of 105–700 cm−1, contains the vibration band characteristic of the cubic (bcc-In2O3) phase. As revealed by EDX spectra, the In2O3 layer, ~2 μm thick, formed on InSe:Cd contains an ~18% excess of atomic oxygen. The absorption edge of InSe:Sn (Cd)/In2O3 structures was studied by ultraviolet reflectance spectroscopy and found to be 3.57 eV and ~3.67 eV for InSe:Cd and InSe:Sn substrates, respectively. By photoluminescence analysis, the influence of doping impurities on the emission bands of In2O3:Sn (Cd) was revealed and the energies of dopant-induced and oxygen-induced levels created by diffusion into the InSe layer from the InSe/In2O3 interface were determined. The n (p)–InSe/In2O3 structures display a significantly wide spectral range of photosensitivity (1.2–4.0 eV), from ultraviolet to near infrared. The influence of Cd and Sn concentrations on the photosensitivity and recombination of nonequilibrium charge carriers in n (p)–InSe layers from the heterojunction interface was also studied. The as-obtained nanosized InSe/In2O3 structures are suitable for optoelectronic applications.

In this paper, we report on the effect of titanium dioxide (TiO2) target sintering temperature on the morphological and optical properties of amorphous titanium dioxide thin films synthesized by pulsed laser deposition (PLD) on indium tin oxide (ITO) glass substrate and subsequently heat-treated in air at low temperature (150 °C). Three types of targets were used, unsintered (pressed at room temperature), sintered at 500 °C and sintered at 1000 °C. The surface morphology of the samples was investigated by scanning electron microscopy (SEM), and profilometry was used for thickness measurements. The structural properties of the films were examined by X-ray diffraction (XRD), while their optical properties were studied by UV‒vis spectroscopy. The obtained TiO2 thin films have an amorphous nature, as shown by XRD analysis. Profilometer showed that sintered target samples have more reliable thicknesses than unsintered ones. The SEM studies revealed the sufficient structural homogeneity of sintered target nanosized TiO2 films and agglomerates in the case of unsintered target film. The UV‒vis transmittance spectra showed high transparency in the visible range of PLD films, proportional to the target sintering temperature. The optical band gaps of the films deposited using the 500 °C and 1000 °C sintered targets are closer to those of anatase and rutile phases, respectively, which provides a promising approach to the challenges of amorphous TiO2-based nanostructures.

This work reports a study on structural, electrical and optical properties of some recently synthesized pyrrolo[1,2-i][1,7] phenanthrolines derivatives in thin films. The thin films were deposited onto glass substrates by spin coating technique, using chloroform as solvent. The obtained films exhibited a polycrystalline structure with an n–type semiconductor behavior after heat treatment in the temperature range 293–543 K, specific to each sample. The thermal activation energy lies between 0.68 and 0.78 eV, while the direct optical band gap values were found in the range 4.17–4.24 eV. The electrical and optical properties of the investigated organic semiconductor films were discussed in relation to microstructural properties, determined by the molecular structure. The investigated organic compounds are promising for applications in organic optoelectronics and nanoelectronics.

Temperature dependence of d. c. electric conductivity of some recently synthesized heterocyclic compounds, 4,4′-bipyridine and indolizine derivatives, in thin films (d = 0.27–0.51 μm) spin-coated from chloroform solutions onto glass, is studied. The investigated compounds are polycrystalline (as shown by X-ray Diffraction analysis) and show typical n-type semiconductor behavior. The activation energy of d. c. electric conduction ranges between 1.55 and 2.33 eV. Some correlations between semiconducting characteristics and essential features of molecular structure of organic compounds have been established. In the higher temperature range (400–520 K), the electronic transport properties in present compounds can be explained in the frame of band gap representation model, while in the lower temperature range (300–350 K), the Mott's variable-range hopping conduction model can be conveniently used.

Temperature dependences of electric conductivity and thermoelectric power of some recently synthesized organic compounds, 4-tert-butylcalix[4]arene derivatives, are studied. Thin-film samples (d = 0.10–0.40 μm) spin-coated from chloroform solutions onto glass substrates were used. Organic films with reproducible electron transport properties can be obtained if, after deposition, they are submitted to a heat treatment within temperature range of 295–575 K. The studied polycrystalline compounds show typical p-type semiconductor behavior. The activation energy of the electric conduction ranges between 0.82 and 1.12 eV, while the ratio of charge carrier mobilities was found in the range of 0.83–0.94. Some correlations between semiconducting parameters and molecular structure of the organic compounds have been discussed. In the higher temperature ranges (T > 420 K), the electron transport in examined compounds can be interpreted in terms of the band gap representation model, while in the lower temperature range, the Mott's variable-range hopping conduction model was found to be appropriate. The investigated compounds hold promise for thermistor applications.

Temperature-dependent d.c. electric conductivity of some recently synthesized indolizine derivatives is studied. Thin-film samples (d = 0.10–0.30 μm) spin-coated from chloroform solutions onto glass substrates were used. Organic films with reproducible electric properties can be obtained by submitting as-prepared samples to a heat treatment within temperature range of 301–493 K. The studied polycrystalline compounds show typical n-type semiconductor behavior. The activation energy of the electric conduction ranges between 0.32 and 1.07 eV. Some correlations between semiconducting characteristics and molecular structure of the organic compounds have been discussed. In the higher temperature range (T > 415 K), the electron transport in present compounds can be interpreted in terms of the band gap representation model, while in the lower temperature range (T < 339 K), the Mott’s variable-range hopping conduction model was found to be suitable.

In this work, temperature dependences of electrical conductivity and thermoelectric power, for some recently synthesized nonsymmetrical bisindolizines, are studied. Thin-film samples (d = 0.10–0.30 μm) spin-coated from dichloromethane solutions onto glass substrates were used. Organic films with reproducible electronic transport properties can be obtained if, after deposition, they are subjected to a heat treatment within the temperature range of 301–541 K. The studied organic compounds show typical p-type semiconductor behavior. The activation energy of electrical conduction was found in the range 1.00–1.26 eV, while the ratio of charge carrier mobilities ranged between 0.90 and 0.97. The correlations between determined semiconducting parameters and specific features of molecular structure of the compounds have been discussed. In the higher temperature range (363–541 K), the electronic transport in actual compounds can be interpreted by using the band gap representation model, while for lower temperatures, Mott's variable-range hopping conduction model was found to be appropriate.

Temperature-dependent electrical conductivity and thermoelectric power of some recently synthesized fused heterocyclic compounds (nonsymmetrical bisindolizines), are studied. Thin-film samples ( d = 0.10–0.20 μm) deposited from dichloromethane solutions onto glass substrates were used. Organic films with reproducible electronic transport properties can be obtained if, after deposition, they are submitted to a heat treatment within temperature range 300–600 K. The studied compounds show typical p-type semiconductor behavior. The activation energy of the electrical conduction ranges between 0.90 and 1.17 eV, while the ratio of charge carrier mobilities was found in the range 0.94–0.97. Some correlations between semiconducting parameters and molecular structure of the organic compounds have been discussed. In the higher temperature range (373–601 K), the electronic transport in examined compounds can be interpreted in terms of the band gap representation model, while in the lower temperature range, the Mott's variable-range hopping conduction model was found to be appropriate.