21 results on '"Assali, Simone"'
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2. Sn Alloying Impact on Structural and Electronic Properties of Core-Shell Ge-GeSn Nanowires: A TEM Study
3. Mid‐Infrared Top‐Gated Ge0.82Sn0.18 Nanowire Phototransistors.
4. Mid-infrared Imaging Using Strain-Relaxed Ge1–xSnx Alloys Grown on 20 nm Ge Nanowires.
5. Continuous-Wave GeSn Light-Emitting Diodes on Silicon with 2.5 μm Room-Temperature Emission.
6. Nuclear Spin‐Depleted, Isotopically Enriched 70Ge/28Si70Ge Quantum Wells.
7. Polarization‐Tuned Fano Resonances in All‐Dielectric Short‐Wave Infrared Metasurface.
8. Extended-SWIR GeSn LEDs with Reduced Footprint and Efficient Operation Power.
9. A Light‐Hole Germanium Quantum Well on Silicon.
10. Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain.
11. High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response.
12. Ge–Ge0.92Sn0.08 core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication.
13. Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires.
14. Enhanced GeSn Microdisk Lasers Directly Released on Si.
15. Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects.
16. 1D photonic crystal direct bandgap GeSn-on-insulator laser.
17. All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors.
18. TEOS layers for low temperature processing of group IV optoelectronic devices.
19. Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires.
20. Unit cell structure of the wurtzite phase of GaP nanowires: X-ray diffraction studies and density functional theory calculations.
21. Efficient water reduction with gallium phosphide nanowires.
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