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Scanning Photo-Induced Impedance Microscopy (SPIM) is an impedance imaging technique that is based on photocurrent measurements at field-effect structures. The material under investigation is deposited onto a semiconductor-insulator substrate. A thin metal film or an electrolyte solution with an immersed electrode serves as the gate contact. A modulated light beam focused into the space charge region of the semiconductor produces a photocurrent, which is directly related to the local impedance of the material. The absolute impedance of a polymer film can be measured by calibrating photocurrents using a known impedance in series with the sample. Depending on the wavelength of light used, charge carriers are not only generated in the focus but also throughout the bulk of the semiconductor. This can have adverse effects on the lateral resolution. Two-photon experiments were carried out to confine charge carrier generation to the spacecharge layer. The lateral resolution of SPIM is also limited by the lateral diffusion of charge carriers in the semiconductor. This problem can be solved by using thin silicon layers as semiconductor substrates. A resolution of better than 1 mu m was achieved using silicon on sapphire (SOS) substrates with a I l.Lm thick silicon layer.