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Perovskite solar cells (PSCs) are believed to be optimistic for commercial deployment soon since the power conversion efficiency of PSCs presently reaches up to 26.10 % due to the intensive efforts these years. The two-step method is comparatively more suitable for scalable perovskite films, where lead halides and ammonium salts are prepared in separate precursors and deposited sequentially. Therefore, the reactivity between these two precursors governs the quality of final perovskite films and the intrinsic non-radiative recombination (NRR) at the perovskite's interfaces. Herein, we empowered both types of precursors, one by one and then simultaneously, with triethylsilane (TES) to investigate its effect on the (FAPbI3)1-x (MAPbBr3)x perovskite's morphological and optoelectronic properties. TES, with ethyl moieties and metalloid center, in ammonium salts delivers homogeneous perovskites' crystals and inhibits the NRR of perovskite films by reducing the defects and trap states. As a result, the optimized devices exhibit not only improved device performance (particularly for the increased fill factors and open circuit voltages) but also enhanced stabilities.

Coating the perovskite layer via a two-step method is an adaptable solution for industries compared to the anti-solvent process. But what about the impact of unreacted PbI2? Usually, it is generated during perovskite conversion in a two-step method and considered beneficial within the grain boundaries, while also being accused of enhancing the interface defects and nonradiative recombination. Several additives are mixed in PbI2 precursors for the purpose of improving the perovskite crystallinity and hindering the Pb2+ defects. Herein, in lieu of adding additives to the PbI2, the effects of the PbI2 residue via the electron transport layer/perovskite interface modification are explored. Consequently, by introducing artemisinin decorated with hydrophobic alkyl units and a ketone group, it reduces the residual PbI2 and improves the perovskites’ crystallinity by coordinating with Pb2+. In addition, artemisinin-deposited perovskite enhances both the stability and efficiency of perovskite solar cells by suppressing nonradiative recombination

3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell have been investigated. Proton fluences are calculated by MUSALISS software based on the equivalent displacement damage method. SRIM simulation is used to analyze the irradiation damage. The result shows that the external quantum efficiency (EQE) and electrical parameters of the solar cell are degraded by both 3 MeV and 10 MeV proton irradiation. The degradation of EQE is larger in the longer wavelength region because of the higher probability of carrier lifetime reduction in the base region of the solar cell, and the 3 MeV proton produced more degradation of the electrical parameters of the solar cell than that of 10 MeV proton irradiation under the same displacement damage dose. [ABSTRACT FROM AUTHOR]

For application in space environments, the effect of 1-MeV electron irradiation on wafer-bonded GaInP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all solid state molecular beam epitaxy was studied. After exposure to 1-MeV electron irradiation at 1×15 e/cm 2 , an end of life remaining factor of approximately 85% was obtained. The wafer bonding interface was studied by spectral response and transmission electron microscopy. 1-MeV electron irradiation was conducted on the individual InGaAsP and InGaAs single junction cell, respectively. The degradation of the four-junction cell was mainly due to damage on the InGaAsP and InGaAs subcells rather than the bonding interface. [ABSTRACT FROM AUTHOR]