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A mesoscopic multi-terminal superconducting Nb strip with a spin injection terminal has been developed. We investigate the influence of spin polarization on the relaxation process of the quasiparticle in the superconducting Nb. The position dependence of the nonlocal voltage provides the quasiparticle relaxation length. The relaxation length for the spin-polarized quasiparticle is found to show a 12.5% increase from that for the un-polarized quasiparticle. This demonstration opens a new avenue for utilization of the spin current in a superconducting device. [ABSTRACT FROM AUTHOR]

We theoretically investigate the spin-dependent transport properties of electrons in realistic magnetic-electric barrier nanostructures, which are produced by the deposition, on top of a heterostructure, of a metallic ferromagnetic stripe with an applied voltage. The degree of the electron-spin polarization is found to be closely associated with this voltage, although the use of applied voltage itself induces no spin polarization effect. As a positive voltage is applied to the stripe the electron-spin polarization shifts towards the low-energy region and increases; it shifts towards the high-energy direction and reduces for a negative applied voltage. These results shown in this work imply that the degree of electron-spin polarization can be tuned by means of an applied voltage on the stripes of system, which may result in a practical voltage-controlled spin filter. [ABSTRACT FROM AUTHOR]

We study the magnetization and the magnetic phases of II-VI-based n-doped nonmagnetic- semiconductor (NMS) / narrow to wide dilute-magnetic-semiconductor (DMS) / n-doped NMS quantum wells under in-plane magnetic field. The parallel magnetic field is used as a tool, in order to achieve non-step-like density of states in these -appropriate for conduction-band spintronics- structures. [ABSTRACT FROM AUTHOR]

We inserted non-magnetic layers of Au and Cu into sputtered AlO $_{x}$ -based magnetic tunnel junctions and Meservey–Tedrow junctions in order to study their effect on tunnelling magnetoresistance (TMR) and spin polarization (TSP). When either Au or Cu are inserted into a Co/AlO $_{x}$ interface, we find that TMR and TSP remain finite and measurable for thicknesses up to several nanometres. High-resolution transmission electron microscopy shows that the Cu and Au interface layers are fully continuous when their thickness exceeds $\sim 3\;\text{nm}$ , implying that spin-polarized carriers penetrate the interface noble metal to distances exceeding this value. A power law model based on exchange scattering is found to fit the data better than a phenomenological exponential decay. The discrepancy between these length scales and the much shorter ones reported from x-ray magnetic circular dichroism studies of magnetic proximitization is ascribed to the fact that our tunnelling transport measurements selectively probe s -like electrons close to the Fermi level. When a 0.1 nm thick Cu or Au layer is inserted within the Co, we find that the suppression of TMR and TSP is restored on a length scale of $\lesssim 1\;\text{nm}$ , indicating that this is a sufficient quantity of Co to form a fully spin-polarized band structure at the interface with the tunnel barrier.