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Ce, Cu co-doped ZnS nanoparticles were prepared at room temperature using a chemical co-precipitation method. The prepared nanoparticles were characterized by X- ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive analysis of X-rays (EDAX), diffuse reflectance spectroscopy (DRS), photoluminescence (PL) and high resolution Raman spectroscopic techniques. Transmission electron microscopy (TEM) and X-ray diffraction studies showed that the diameter of the particles was around 2–3 nm. Broadened XRD peaks revealed the formation of nanoparticles with a face centered cubic (fcc) structure. DRS studies confirmed that the band gap increased with an increase in the dopant concentration. The Raman spectra of undoped and Ce, Cu ions co-doped ZnS nanoparticles showed longitudinal optical mode and transverse optical mode. Compared with the Raman modes (276 and 351 cm −1 ) of undoped ZnS nanoparticles, the Raman modes of Ce, Cu co- doped ZnS nanoparticles were slightly shifted towards lower frequency. PL spectra of the samples showed remarkable enhancement in the intensity upon doping. [ABSTRACT FROM AUTHOR]

Abstract: Mo-doped In2O3 thin films have been prepared on glass substrates using an activated reactive evaporation method and systematically studied the effect of oxygen partial pressure on the structural, optical, electrical and photoluminescence properties of the films. The obtained films are highly transparent and conductive. The films exhibited the lowest electrical resistivity of 5.2×10−4 Ωcm, with an average optical transmittance of 90% in the visible region. An intensive photoluminescence emission peaks were observed at 415 and 440nm. [Copyright &y& Elsevier]

Abstract: Transparent and high conductive molybdenum doped indium oxide (IMO) thin films have been deposited on glass substrates by activated reactive evaporation. The effect of substrate temperature on the structure, surface morphology, electrical, optical and photoluminescence properties of these films were systematically examined and it was found that crystallinity and growth orientation of the films were significantly influenced by substrate temperature. In addition the films exhibited a low electrical resistivity of 5.2×10−4 Ωcm with an optical transmittance 90% in the visible region of the solar spectrum at a substrate temperature of 573K. Intensive blue PL bands at 415 and 440nm were observed in the photoluminescence spectrum at room temperature. [Copyright &y& Elsevier]

Abstract: Thin films of Cd1−x Mn x S () were formed on glass substrates by resistive vacuum thermal evaporation. All the films were deposited at 300 K and the films were annealed at 373, 473 and 573 K for 1 h in a vacuum of 10−6 mbar. Atomic force microscopy (AFM) studies showed that all the films investigated were in nano-crystalline form with a grain size in the range 36–82 nm. All the films exhibited a wurtzite structure of the host material. The lattice parameters varied linearly with composition following Vegard’s law in the entire composition range. Photoluminescence studies showed that two distinct emission bands were observed for each Cd1−x Mn x S compound. One corresponds to internal transition and the other one is due to the transition of Mn2+ ions in interstitial sites or in small ‘Mn’ chalcogenic clusters. [Copyright &y& Elsevier]