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III–V materials, such as InGaAs and InP, are highly attractive for high-performance electronics and optoelectronics owning to their high carrier mobilities and potential for bandgap engineering. Integration on silicon substrates, however, is a key requirement to enable widespread adoption of these materials. In this work, direct wafer bonding (DWB) of III–V materials is explored as a low-temperature enabling technology for Si integration. For high-performance logic and RF electronics, DWB is compared to competing integration technologies and is shown to exhibit higher device performance due to its relatively low process complexity and thermal impact (~300 °C). Due to the low thermal impact of DWB, it is also uniquely suitable for 3-D integration, i.e., vertical stacking of multiple functional layers. III–V optoelectronics are attractive in such 3-D stacks, where they can enable high-efficiency tunable lasers together with Si photonics integrated circuits. DWB is here compared to selective epitaxy as an integration route for InP-on-Si microdisk lasers. Plasmonics are explored as well, allowing scaling of integrated III–V photonic devices beyond the diffraction limit of light. The results of this work show that DWB is a highly promising integration route for III–V materials for both electronics and optoelectronics applications. [ABSTRACT FROM AUTHOR]

A new concept of semiconductor wafer bonding, mediated by optical wavelength conversion materials, is proposed and demonstrated. The fabrication scheme provides simultaneous bond formation and interfacial function generation, leading to efficient device production. Wavelength-converting functionalized semiconductor interfacial engineering is realized by utilizing an adhesive viscous organic matrix with embedded fluorescent particles. The bonding is carried out in ambient air at room temperature and therefore provides a cost advantage with regard to device manufacturing. Distinct wavelength conversion, from ultraviolet into visible, and high mechanical stabilities and electrical conductivities in the bonded interfaces are verified, demonstrating their versatility for practical applications. This bonding and interfacial scheme can improve the performance and structural flexibility of optoelectronic devices, such as solar cells, by allowing the spectral light incidence suitable for each photovoltaic material, and photonic integrated circuits, by delivering the respective preferred frequencies to the optical amplifier, modulator, waveguide, and detector materials. [ABSTRACT FROM AUTHOR]