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Van der Waals epitaxy growth of two-dimensional materials promise controllable fabrication of novel artificial heterostructures. Here, we report molecular beam epitaxy growth of continuous molybdenum ditelluride (MoTe 2 ) films on graphene substrates with good stoichiometry in both 2H and 1T′ phases. Post-growth annealing reveal phase transition suppressed in Te-rich atmosphere, through in-situ scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy. Our results suggest a new route to fabricate atomically ultrathin MoTe 2 lateral heterophase homojunctions, showing potential applications in future lateral thin-film transistors. [ABSTRACT FROM AUTHOR]