Search

Significance: Optical imaging of Cherenkov emission during radiation therapy could be used to verify dose delivery in real-time if a more comprehensive quantitative understanding of the factors affecting emission intensity could be developed. Aim: This study aims to explore the change in diffuse Cherenkov emission intensity with x-ray beam energy from irradiated tissue, both theoretically and experimentally. Approach: Derivation of the emitted Cherenkov signal was achieved using diffusion theory, and experimental studies with 6 to 18 MV energy x-rays were performed in tissue phantoms to confirm the model predictions as related to the radiation build-up factor with depth into tissue. Results: Irradiation at lower x-ray energies results in a greater surface dose and higher build-up slope, which results in a ∼46% greater diffusely emitted Cherenkov signal per unit dose at 6 MV relative to 18 MV x-rays. However, this phenomenon competes with a decrease in signal from less Cherenkov photons being generated at lower energies, a ∼44% reduction at 6 versus 18 MV. The result is an emitted Cherenkov signal that is nearly constant with beam energy. Conclusions: This study explains why the observed Cherenkov emission from tissue is not a strong function of beam energy, despite the known strong correlation between Cherenkov intensity and particle energy in the absence of build-up and scattering effects.

A series of single InGaN/GaN quantum wells (QWs) with a Si-doped InGaN underlayer were studied to investigate the impact of the underlayer on photoluminescence efficiency and recombination dynamics. The thickness of the GaN capping layer was varied between samples, which changed the electric field across the QW due to band bending near the surface. When directly exciting the wells, thermionic emission of carriers results in a rapid drop in the photoluminesence efficiency with increasing temperature such that no emission is observed above 100 K. However, exciting above the energy of the barriers caused the intensity of the QW emission to drop more slowly, with up to 12% of the 10 K emission intensity remaining at 300 K. This difference is attributed to hole transfer from the underlayer into the QW, which increases in efficiency at higher temperatures, and is enhanced by stronger electric fields present in the GaN barriers of samples with thinner GaN capping layers. Further, the sample with the narrowest cap layer of 2 nm has a different shape and characteristic time for its photoluminescence decay transient and a different emission energy temperature dependence than the other samples. This behaviour was ascribed to a change in carrier localisation for this sample due to a reversal of the net field across the well compared to the other samples.