1. 4–12- and 25–34-GHz Cryogenic mHEMT MMIC Low-Noise Amplifiers.
- Author
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Aja Abelan, Beatriz, Seelmann-Eggebert, Matthias, Bruch, Daniel, Leuther, Arnulf, Massler, Hermann, Baldischweiler, Boris, Schlechtweg, Michael, Gallego-Puyol, Juan Daniel, Lopez-Fernandez, Isaac, Diez-Gonzalez, Carmen, Malo-Gomez, Inmaculada, Villa, Enrique, and Artal, Eduardo
- Subjects
LOW temperature engineering ,REDUCED instruction set computers ,MONOLITHIC microwave integrated circuits ,BROADBAND communication systems ,MODULATION-doped field-effect transistors ,CRYOELECTRONICS - Abstract
In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) for cryogenic applications based on a 100-nm metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide are reported. A three-stage LNA, operating in 4–12 GHz and cooled to 15 K exhibits an associated gain of 31.5 dB \pm 1.8 dB and average noise temperature of 5.3 K (NF=0.079\ \ dB) with a low power dissipation of 8 mW. Additionally another three-stage LNA 25–34 GHz cooled to 15 K has demonstrated a flat gain of 24.2 dB \pm 0.4 dB with 15.2 K (NF=0.22\ \ dB), average noise temperature, with a very low power dissipation of 2.8 mW on chip. The mHEMT-based LNA MMICs have demonstrated excellent noise characteristics at cryogenic temperatures for their use in radio-astronomy applications. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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