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Four conjugated polymers are integrated with a bacteriorhodopsin D94N‐HmBRI in organic field‐effect transistors (OFETs) with the device architecture of doped Si bottom gate/SiO2 bottom electric/semiconducting polymer/Au electrodes/D94N‐HmBRI top dielectric. Photosensitivity of D94N‐HmBRI in the devices is validated. It is proposed that light activates the conformational change of all‐trans retinal to 13‐cis retinal in D94N‐HmBRI. The D94N‐HmBRI layer then applies momentary dipoles to the semiconductors, affecting threshold voltage, resulting in photosensitivity. Film‐thickness variation, capacitance determination, and grazing‐incidence X‐ray scattering are performed to support the proposed working principle. Quasi dual‐gate OFETs with a highly doped silicon wafer as the bottom gate and light as the top gate are thus realized by combining conjugated polymers with D94N‐HmBRI. [ABSTRACT FROM AUTHOR]

Abstract Four conjugated polymers are integrated with a bacteriorhodopsin D94N‐HmBRI in organic field‐effect transistors (OFETs) with the device architecture of doped Si bottom gate/SiO2 bottom electric/semiconducting polymer/Au electrodes/D94N‐HmBRI top dielectric. Photosensitivity of D94N‐HmBRI in the devices is validated. It is proposed that light activates the conformational change of all‐trans retinal to 13‐cis retinal in D94N‐HmBRI. The D94N‐HmBRI layer then applies momentary dipoles to the semiconductors, affecting threshold voltage, resulting in photosensitivity. Film‐thickness variation, capacitance determination, and grazing‐incidence X‐ray scattering are performed to support the proposed working principle. Quasi dual‐gate OFETs with a highly doped silicon wafer as the bottom gate and light as the top gate are thus realized by combining conjugated polymers with D94N‐HmBRI.