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Normal microwave (MW) electromagnetic field detectors convert microwave power into voltages, which results in the loss of the vector characteristics of the microwave field. In this work, we developed a MW magnetic field (h-field) vector detector based on the nonresonant spin rectification effect. By measuring and analyzing the angle dependence of the rectification voltages under nonresonant conditions, we can extract the three components of the h-field. As an initial test of this method, we obtained the h-field distributions at 5.4 GHz generated by a coplanar waveguide with sub-wavelength resolution. Compared to methods using ferromagnetic resonance, this technique offers a faster and more convenient way to determine the spatial distribution of the h-field, which can be used for MW integrated circuit optimization and fault diagnosis.

In order to understand the anti-site disorder effect on the anisotropic magnetoresistance (AMR) effect in alloys, $\rm{Fe}_{50}Co_{50}$ alloys were studied in this work using the fully relativistic spin-polarized screened (KKR) method. The anti-site effect was modeled by interchanging Fe and Co atoms and treated by the coherent potential approximation (CPA). We find that the anti-site disorder broadens the spectral function and decreases the conductivity. Our work emphasizes that the absolute variations of resistivity under magnetic moment rotation are less affected by atomic disorders. The annealing procedure improves the AMR by reduction of the total resistivity. At the same time, we also find that the fourth-order term in the angular dependent resistivity becomes weaker when the disorder increases, resulting from increased scattering of the states around the band-crossing., Comment: 12pages, 7 figures

In this work, a scanning inverse spin Hall effect measurement system based on a shorted coaxial resonator has been built, which provides a high throughput method to characterize spin transport properties. The spin diffusion length of Ta at room temperature is determined via automatic measurements of Py/Ta bilayer strips with different thicknesses of Ta. The results show that the spin diffusion length is about 4 nm with a conductivity of about 7.5E5 {\Omega}-1m-1, which leads to the conclusion that the intrinsic mechanism of spin relaxation of Ta is the Elliott-Yafet interactions. The setup developed in this work provides a convenient, efficient, and non-destructive way to obtain the spin and electron transportation characteristics of the spintronic materials, which will fertilize this community by developing new materials and figuring out their mechanism.

The spin Hall conductivity (SHC) and anomalous Hall conductivity (AHC) in more than 120 full Heusler compounds are calculated using density functional theory in a high-throughtput way. The electronic structures are mapped to the Wannier basis and the linear response theory is used to get the conductivity. Our results show that the mechanism under the SHC or AHC cannot be simply related to the valence electron numbers or atomic weights, is related to the very details of the electronic structure, which can only be obtained by calculations. A high throughput calculation is efficient to screen out the desired materials. According to our present results, Cu2CoSn, as well as Co2MnAl and Co2MnGa are candidates in spintronic materials regarding to their high SHC and AHC values, which can benefit the spin-torque-driven nanodevices.

Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hopping mechanism with a Coulomb gap at temperatures in the range of 2-50 K. These results show that the electron wave-function in the vicinity of the transition is strongly affected by the disorder and the electron-electron interaction., Comment: 19 pages, 6 figures

We measured the spin rectify effect and the inverse spin Hall effect in Nb-doped SrTiO$_3$ by injecting the spins from ferromagnetic thin films to SrTiO$_3$ using spin pumping. It was shown that the spin injection is increased when the doping level is increased. However, the spin Hall angle decreases when Nb occupies more than $\sim$2\% of the Ti sites, which is due to that beyond this concentration, the electron contributed the spin Hall effect is from the $d-$orbitals of Nb instead those from the Ti. Our work points to the importance of orbital occupations in the (inverse) spin Hall effect. We may explore controllable spin and charge interconversion in oxide spintronics., Comment: 6 pages,7 figures

Controlling charge-spin current conversion by electric fields is crucial in spintronic devices, which can be realized in diatom ferroelectric semiconductor GeTe where it is established that ferroelectricity can change the spin texture. We demonstrated that the spin Hall conductivity (SHC) can be further tuned by ferroelectricity based on the density functional theory calculations. The spin texture variation driven by the electric fields was elucidated from the symmetry point of view, highlighting the interlocked spin and orbital degrees of freedom. We observed that the origin of SHC can be attributed to the Rashba effect and the intrinsic spin-orbit coupling. The magnitude of one component of SHC {\sigma}_xy^z can reach as large as 100 {\hbar}/e/({\Omega}cm) in the vicinity of the band edge, which is promising for engineering spintronic devices. Our work on tunable spin transport properties via the ferroelectric polarization brings novel assets into the field of spintronics., Comment: 6 figures

The anisotropic magnetoresistance (AMR) in thin permalloy strips was calculated at each steps during magnetization by the finite element method. The magnetization at equilibrium under different external fields was obtained by micromagnetic simulations, while the resistance with different magnetization was obtained by solving the Poisson equations iteratively until self-consistence. We find that the relation between magnetization and AMR deviates from the Stoner-Wohlfarth prediction when the magnetization is reduced from saturation. The reason is that the demagnetization is not necessarily from coherent rotation of the magnetic moment. We conclude that it is necessary to use numeric simulations to optimize the responses of AMR sensors.

Conversion of spin to charge current was observed in SrTiO3 doped with Nd (Nd:STO), which exhibited a metallic behavior even with low concentration doping. The obvious variation of DC voltages for Py/Nd:STO, obtained by inverting the spin diffusion direction, demonstrated that the detected signals contained the contribution from the inverse spin Hall effect (ISHE) induced by the spin dependent scattering from Nd impurities with strong spin-orbit interaction. The DC voltages of the ISHE for Nd:STO were measured at different microwave frequency and power, which revealed that spin currents were successfully injected into doped STO layer by spin pumping. The linear relation between the ISHE resistivity and the resistivity induced by impurities implied that the skew scattering was the dominant contribution in this case, and the spin Hall angle was estimated to be 0.17%. This work demonstrated that extrinsic spin dependent scattering in oxides can be used in spintroics besides that in heavy elements doped metals.

The (001) surface of SrTiO3 were transformed from insulating to conducting after Ar+ irradiation, producing a quasi two-dimensional electron gas (2DEG). This conducting surface layer can introduce Rashba spin orbital coupling due to the broken inversion symmetry normal to the plane. The spin splitting of such a surface has recently been demonstrated by magneto-resistance and angular resolved photoemission spectra measurements. Here we present experiments evidencing a large spin-charge conversion at the surface. We use spin pumping to inject a spin current from NiFe film into the surface, and measure the resulting charge current. The results indicate that the Rashba effect at the surface can be used for efficient charge-spin conversion, and the large efficiency is due to the multi-d-orbitals and surface corrugation. It holds great promise in oxide spintronics., Comment: 11 pages, 5 figures

Besides its predicted promising high electron mobilities at room temperature, PtSe2 bandgap sensitively depends on the number of monolayers combined by van der Waals interaction according to our calculations. We understand this by using bandstructure calculations based on the density functional theory. It was found that the front orbitals of VBM and CBM are contributed mainly from pz and px+y orbitals of Se which are sensitive to the out-plane and in-plane lattice constants, respectively. The van der Waals force enhances the bonding out-of-plane, which in-turn influences the bonding in-plane. We found that the thickness dependent bandgap has the same origin as the strain dependent bandgap, which is from the change of the front orbital interactions. The work shows the flexibilities of tuning the electronic and optical properties of this compound in a wide range., Comment: 6 pages, 8 figures

We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, inversion of the spin injection direction changes the ISHE voltage signal, while SRE voltage remains. It applies generally to analyzing the different voltage contributions without fitting them to special line shapes. This fast and simple method can be used in a wide frequency range, and has the flexibility of sample preparation., Comment: 4 figures

We calculated the electron mobility of 14 two dimensional semiconductors with composition of MX$_2$, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by deformation potential approximation. Long wave longitudinal acoustical and optical phonon scatterings are included. Piezoelectric scattering in the compounds without inversion symmetry is also taken into account. We found that out of the 14 compounds, WSe$_2$, PtS$_2$ and PtSe$_2$, are promising regarding to the possible high electron mobility and finite band gap. The phonon limited mobility in PtSe$_2$ reaches about 3000 cm$^2$V$^{-1}$s$^{-1}$ at room temperature which is the highest among the compounds. The bandgap under the local density approximation is 1.25 eV. Our results can be a guide for experiments to search for better two-dimensional materials for future semiconductor devices.

The electronic structures of four Laves phase iron compounds (e.g. YFe$_2$, ZrFe$_2$, LuFe$_2$ and HfFe$_2$) have been calculated by the state-of-the-art full potential electronic structure code. The magnetic moments collapse under hydrostatic pressure. This feature is found to be universal in these materials. Its electronic origin is provided by the sharp peaks in the density of states near the Fermi level. It is shown that a first order quantum phase transition can be expected under pressure in Y(Zr, or Lu)Fe$_2$, while a second order one in HfFe$_2$. The bonding characteristics are discussed to elucidate the equilibrium lattice constant variation. The large spontaneous volume magnetostriction gives one of the most important character of these compounds. Invar anomalies in these compounds can be partly explained by the current work when the fast continuous magnetic moment decrease at the decrease of the lattice constant was properly considered. This work may remind the experimentalists of these "old" compounds and exploration of the quantum properties under high pressures are greatly encouraged.

Electronic structure and magnetic properties of ZrFe$_2$ with a cubic Laves phase are investigated by calculations based on the density functional theory. The total magnetic moment (m) of 3.14 $\mu_B$ per formula unit (\emph{f.u.}) is obtained at the experimental lattice constant (7.06 \AA), which is larger than 3.06 $\mu_B$/\emph{f.u.} obtained at the theoretical equilibrium lattice constant (6.85 \AA). The localized $3d$ magnetic moment is in negative diffusive sp background moment. We predict a two-step magnetic collapse under pressure: one is from 3.06 $\mu_B$/\emph{f.u.} to 1.26 $\mu_B$/\emph{f.u.} at about 3.6 GPa, and the other is from 0.5 $\mu_B$/\emph{f.u.} to nonmagnetic state at about 15 GPa. We understand this process by the changes of density of states. The magnetic moment decreases under the pressure in the vicinity of the experimental lattice constant with $d\ln m/dp=-0.038$ GPa$^{-1}$. The spontaneous volume magnetostriction is 0.015. We suggest that the Invar effect of this alloy may be understood when considering the magnetic moment variation according to the Weiss $2\gamma$-model.

We calculated the longitudinal acoustic phonon limited electron mobility of 14 two dimensional semiconductors with composition of MX$_2$, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by deformation potential approximation. We found that out of the 14 compounds, MoTe$_2$, HfSe$_2$ and HfTe$_2$, are promising regarding to the possible high mobility and finite band gap. The phonon limited mobility can be above 2500 cm$^2$V$^{-1}$s$^{-1}$ at room temperature.