19 results on '"Zavarin, E. E."'
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2. Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data
3. Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures
4. InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications
5. Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors
6. Optical reflection spectra of resonant photonic structures based on a system of 100 InGaN quantum wells
7. Proton irradiation effects on GaN-based epitaxial structures
8. 2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions
9. Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation
10. Raman spectra of interface phonons in long-period AlN/GaN superlattices as a tool for determination of the structure period
11. Phonons in short-period (GaN)m(AlN)nsuperlattices:ab initiocalculations and group-theoretical analysis of modes and their genesis
12. A fabrication of AlGaN / AlN / GaN HEMT without annealing of ohmic contacts
13. Two-dimensional plasmons in a GaN/AlGaN heterojunction
14. Investigation of Statistical Broadening in InGaN Alloys
15. Resonant Bragg structures with GaN/AlGaN Quantum Wells
16. Optical properties of GaN/AlGaN nanostructures in the terahertz frequency range
17. InAlN/AlN/GaN heterostructures for high electron mobility transistors
18. Effect of Annealing on Phase Separation in Ternary III-N Alloys
19. INVESTIGATIONS OF InGaN/GaN AND InGaN/InGaN QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR
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